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    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08552497B2

    公开(公告)日：2013-10-08

    申请号：US13290535

    申请日：2011-11-07

    申请人： Jae-Han Cha ,  Kyung-Ho Lee ,  Sun-Goo Kim ,  Hyung-Suk Choi ,  Ju-Ho Kim ,  Jin-Young Chae ,  In-Taek Oh

    发明人： Jae-Han Cha ,  Kyung-Ho Lee ,  Sun-Goo Kim ,  Hyung-Suk Choi ,  Ju-Ho Kim ,  Jin-Young Chae ,  In-Taek Oh

    IPC分类号： H01L29/66

    CPC分类号： H01L29/0847 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7835

    摘要： The semiconductor device includes: a first conductive-type first well and a second conductive-type second well configured over a substrate to contact each other; a second conductive-type anti-diffusion region configured in an interface where the first conductive-type first well contacts the second conductive-type second well over the substrate; and a gate electrode configured to simultaneously cross the first conductive-type first well, the second conductive-type anti-diffusion region, and the second conductive-type second well over the substrate.

    摘要翻译： 半导体器件包括：第一导电型第一阱和第二导电型第二阱，其被配置在衬底上以彼此接触; 第二导电型防扩散区，其配置在所述第一导电型第一阱与所述第二导电型第二阱相接触的界面处; 以及栅电极，其被配置为在所述衬底上同时与所述第一导电型第一阱，所述第二导电型反扩散区和所述第二导电型第二阱交叉。

    RF signal of karaoke data receiving pack and karaoke system using thereof
    4.
    发明授权
    RF signal of karaoke data receiving pack and karaoke system using thereof 失效
    卡拉OK数据接收包的RF信号和使用它的卡拉OK系统

    公开(公告)号：US08073379B2

    公开(公告)日：2011-12-06

    申请号：US10560143

    申请日：2004-06-10

    申请人： Kyung-Ho Lee

    发明人： Kyung-Ho Lee

    IPC分类号： G09B5/00

    CPC分类号： G09B19/00 ,  G10H1/0083 ,  G10H1/363 ,  G10H2240/211 ,  G11B27/105 ,  G11B31/00 ,  G11B2220/2562 ,  H04N5/84 ,  H04N21/42203 ,  H04N21/42646 ,  H04N21/4325 ,  H04N21/482

    摘要： Disclosed are an RF signal of karaoke data receiving pack and karaoke system using thereof. The RF Karaoke data receiving pack includes an RF receiver for receiving a voice signal and key data signal radio-transmitted from a wireless microphone device via a receiving antenna; an audio/key data signal separator for separating the voice signal and key data signal from the signal demodulated by the demodulator, a receiver MCU controlling the internal operation of the RF karaoke data signal receiving pack while transmitting the digital voice signal and key data signal to the external computing device; and an extension pack in which additional songs are recorded, the extension pack being connected to an extension pack slot to transmit data of the additional songs under the control of the receiver MCU.

    摘要翻译： 公开了使用其的卡拉OK数据接收包和卡拉OK系统的RF信号。 RF卡拉OK数据接收包包括用于接收语音信号的RF接收器和经由接收天线从无线麦克风装置无线发送的密钥数据信号; 用于从由解调器解调的信号中分离语音信号和键数据信号的音频/键数据信号分离器，控制RF卡拉OK数据信号接收包的内部操作的接收机MCU，同时将数字语音信号和密钥数据信号发送到 外部计算设备; 以及其中记录附加歌曲的扩展包，扩展包连接到扩展包插槽，以在接收器MCU的控制下传送附加歌曲的数据。

    Method for fabricating CMOS image sensor with pocket photodiode for minimizng image lag
    5.
    发明授权
    Method for fabricating CMOS image sensor with pocket photodiode for minimizng image lag 失效
    用于制造具有袖珍光电二极管的CMOS图像传感器以最小化图像滞后的方法

    公开(公告)号：US08003424B2

    公开(公告)日：2011-08-23

    申请号：US11983913

    申请日：2007-11-13

    申请人： Kyung-Ho Lee ,  Yi-Tae Kim ,  Jung-Chak Ahn ,  Sae-Young Kim

    发明人： Kyung-Ho Lee ,  Yi-Tae Kim ,  Jung-Chak Ahn ,  Sae-Young Kim

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14689 ,  H01L31/035281

    摘要： A CMOS image sensor includes a photosensitive device, a floating diffusion region, a transfer transistor, and a pocket photodiode formed in a semiconductor substrate of a first conductivity type. The floating diffusion region is of a second conductivity type. The transfer transistor has a channel region disposed between the photosensitive device and the floating diffusion region. The pocket photodiode is of the second conductivity type and is formed under a first portion of a bottom surface of the channel region such that a second portion of the bottom surface of the channel region abuts the semiconductor substrate.

    摘要翻译： CMOS图像传感器包括形成在第一导电类型的半导体衬底中的感光器件，浮动扩散区域，转移晶体管和腔室光电二极管。 浮动扩散区域是第二导电类型。 转移晶体管具有设置在感光器件和浮动扩散区域之间的沟道区域。 袋状光电二极管是第二导电类型，并且形成在沟道区的底表面的第一部分下方，使得沟道区的底表面的第二部分与半导体衬底相邻。

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20110133279A1

    公开(公告)日：2011-06-09

    申请号：US12836503

    申请日：2010-07-14

    申请人： Jae-Han Cha ,  Kyung-Ho Lee ,  Sun-Goo Kim ,  Hyung-Suk Choi ,  Ju-Ho Kim ,  Jin-Young Chae ,  In-Taek Oh

    发明人： Jae-Han Cha ,  Kyung-Ho Lee ,  Sun-Goo Kim ,  Hyung-Suk Choi ,  Ju-Ho Kim ,  Jin-Young Chae ,  In-Taek Oh

    IPC分类号： H01L29/78

    CPC分类号： H01L29/0847 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7835

    摘要： The semiconductor device includes: a first conductive-type first well and a second conductive-type second well configured over a substrate to contact each other; a second conductive-type anti-diffusion region configured in an interface where the first conductive-type first well contacts the second conductive-type second well over the substrate; and a gate electrode configured to simultaneously cross the first conductive-type first well, the second conductive-type anti-diffusion region, and the second conductive-type second well over the substrate.

    摘要翻译： 半导体器件包括：第一导电型第一阱和第二导电型第二阱，其被配置在衬底上以彼此接触; 第二导电型防扩散区，其配置在所述第一导电型第一阱与所述第二导电型第二阱相接触的界面处; 以及栅电极，其被配置为在所述衬底上同时与所述第一导电型第一阱，所述第二导电型反扩散区和所述第二导电型第二阱交叉。

    POROUS ELECTROFORMED SHELL FOR PATTERNING AND MANUFACTURING METHOD THEREOF
    7.
    发明申请
    POROUS ELECTROFORMED SHELL FOR PATTERNING AND MANUFACTURING METHOD THEREOF 有权
    多孔电镀外壳及其制造方法

    公开(公告)号：US20110056837A1

    公开(公告)日：2011-03-10

    申请号：US12845028

    申请日：2010-07-28

    申请人： Kyung-Ho Lee

    发明人： Kyung-Ho Lee

    IPC分类号： C25D1/08

    CPC分类号： C25D1/08 ,  B29C33/3814 ,  B29C51/365 ,  B29C2791/006 ,  B29K2863/00 ,  B29L2031/757 ,  C25D1/10 ,  C25D5/022

    摘要： Disclosed are a porous electroformed shell for forming a grain pattern and a manufacturing method thereof. The method includes the step of implanting a fiber into a patterned surface of a negative-type silicone cast; applying, laminating, and curing an epoxy resin on the patterned surface of the negative-type silicone cast, and transferring the fiber from the negative-type silicone cast to an epoxy mandrel during demolding of the epoxy mandrel; forming a conductive thin film on the patterned surface of the epoxy mandrel, and causing the patterned surface to be conductive; removing the fiber having the conductive thin film from a surface of the epoxy mandrel; forming an electrodeposited layer by electrodepositing an electroforming metal on the conductive thin film while generating and growing a fine pore at a position of a hole due to the removal of the fiber; and demolding the electrodeposited layer having the fine pore from the epoxy mandrel. Through the disclosed method, precise control on a diameter and distribution of a fine pore can be simply and efficiently can be carried out.

    摘要翻译： 公开了一种用于形成颗粒图案的多孔电铸壳及其制造方法。 该方法包括将纤维植入负型硅树脂铸型的图案化表面的步骤; 在负型硅树脂铸型的图案化表面上施加，层压和固化环氧树脂，并且在环氧心轴的脱模期间将纤维从负型硅氧烷铸件转移到环氧树脂心轴; 在环氧心轴的图案化表面上形成导电薄膜，并使图案化表面导电; 从环氧心轴的表面去除具有导电薄膜的纤维; 通过在导电薄膜上电沉积电铸金属而形成电沉积层，同时由于去除纤维而在孔的位置产生和生长细孔; 并从环氧树脂心轴脱模具有细孔的电沉积层。 通过所公开的方法，可以简单有效地对细孔的直径和分布进行精确控制。

    Method for manufacturing a semiconductor device
    8.
    发明授权
    Method for manufacturing a semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US07329570B2

    公开(公告)日：2008-02-12

    申请号：US11319814

    申请日：2005-12-27

    申请人： Kyung-Ho Lee

    发明人： Kyung-Ho Lee

    IPC分类号： H01L21/8238 ,  H01L21/8249

    CPC分类号： H01L21/823814 ,  H01L21/823857 ,  H01L21/823892

    摘要： An exemplary method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming a P-well and an N-well for high voltage (HV) devices and a first well in a low voltage/medium voltage (LV/MV) region for a logic device, in a semiconductor substrate; simultaneously forming a second well in the LV/MV region for a logic device and a drift region for one of the HV devices using the same mask; and respectively forming gate oxide layers on the semiconductor substrate in the HV/MV/LV regions. According to the present invention, the number of photolithography processes can be reduced by replacing or combining an additional mask for forming an extended drain region of a high voltage depletion-enhancement CMOS (DECMOS) with a mask for forming a typical well of a logic device, so productivity of the total process of the device can be enhanced.

    摘要翻译： 根据本发明的实施例的制造半导体器件的示例性方法包括在低电压/中压（LV / MV）下形成用于高压（HV）器件和第一阱的P阱和N阱， 在半导体衬底中的逻辑器件的区域; 同时在用于逻辑器件的LV / MV区域中形成第二阱以及使用相同掩模的一个HV器件的漂移区域; 并分别在HV / MV / LV区域的半导体衬底上形成栅氧化层。 根据本发明，通过用用于形成逻辑器件的典型阱的掩模替换或组合用于形成高电压耗尽增强CMOS（DECMOS）的扩展漏极区域的附加掩模，可以减少光刻工艺的数量 ，因此可以提高设备的整个过程的生产率。

    Semiconductor device
    9.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08546883B2

    公开(公告)日：2013-10-01

    申请号：US12835523

    申请日：2010-07-13

    申请人： Jae-Han Cha ,  Kyung-Ho Lee ,  Sun-Goo Kim ,  Hyung-Suk Choi ,  Ju-Ho Kim ,  Jin-Young Chae ,  In-Taek Oh

    发明人： Jae-Han Cha ,  Kyung-Ho Lee ,  Sun-Goo Kim ,  Hyung-Suk Choi ,  Ju-Ho Kim ,  Jin-Young Chae ,  In-Taek Oh

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7816 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/66681

    摘要： A semiconductor device includes a second conductive-type deep well configured above a substrate. The deep well includes an ion implantation region and a diffusion region. A first conductive-type first well is formed in the diffusion region. A gate electrode extends over portions of the ion implantation region and of the diffusion region, and partially overlaps the first well. The ion implantation region has a uniform impurity concentration whereas the impurity concentration of the diffusion region varies from being the highest concentration at the boundary interface between the ion implantation region and the diffusion region to being the lowest at the portion of the diffusion region that is the farthest away from the boundary interface.

    摘要翻译： 半导体器件包括在衬底上方构造的第二导电类型深阱。 深阱包括离子注入区域和扩散区域。 在扩散区域中形成第一导电型第一阱。 栅电极延伸在离子注入区域和扩散区域的部分上，并且部分地与第一阱重叠。 离子注入区域具有均匀的杂质浓度，而扩散区域的杂质浓度从在离子注入区域和扩散区域之间的边界界面处的最高浓度变为在扩散区域的部分处的最低浓度 距离边界界面最远。