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    Method for fabricating CMOS image sensor with pocket photodiode for minimizng image lag
    1.
    发明授权
    Method for fabricating CMOS image sensor with pocket photodiode for minimizng image lag 失效
    用于制造具有袖珍光电二极管的CMOS图像传感器以最小化图像滞后的方法

    公开(公告)号：US08003424B2

    公开(公告)日：2011-08-23

    申请号：US11983913

    申请日：2007-11-13

    申请人： Kyung-Ho Lee ,  Yi-Tae Kim ,  Jung-Chak Ahn ,  Sae-Young Kim

    发明人： Kyung-Ho Lee ,  Yi-Tae Kim ,  Jung-Chak Ahn ,  Sae-Young Kim

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14689 ,  H01L31/035281

    摘要： A CMOS image sensor includes a photosensitive device, a floating diffusion region, a transfer transistor, and a pocket photodiode formed in a semiconductor substrate of a first conductivity type. The floating diffusion region is of a second conductivity type. The transfer transistor has a channel region disposed between the photosensitive device and the floating diffusion region. The pocket photodiode is of the second conductivity type and is formed under a first portion of a bottom surface of the channel region such that a second portion of the bottom surface of the channel region abuts the semiconductor substrate.

    摘要翻译： CMOS图像传感器包括形成在第一导电类型的半导体衬底中的感光器件，浮动扩散区域，转移晶体管和腔室光电二极管。 浮动扩散区域是第二导电类型。 转移晶体管具有设置在感光器件和浮动扩散区域之间的沟道区域。 袋状光电二极管是第二导电类型，并且形成在沟道区的底表面的第一部分下方，使得沟道区的底表面的第二部分与半导体衬底相邻。

    CMOS image sensor having transistor with conduction band offset
    5.
    发明申请
    CMOS image sensor having transistor with conduction band offset 审中-公开
    CMOS图像传感器具有导带偏移的晶体管

    公开(公告)号：US20080179625A1

    公开(公告)日：2008-07-31

    申请号：US11985016

    申请日：2007-11-13

    申请人： Kyung-Ho Lee ,  Yi-Tae Kim ,  Jung-Chak Ahn

    发明人： Kyung-Ho Lee ,  Yi-Tae Kim ,  Jung-Chak Ahn

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689 ,  H01L29/1054

    摘要： An image sensor includes a photo sensitive device and at lest one transistor such as a drive transistor for converting charge accumulated by the photo sensitive device into an electrical signal. That at least one transistor includes a channel region comprised of a plurality of differently doped regions that generates a conduction band offset in the channel region. Such a conductive band offset increases electron mobility in the channel region for minimizing charge trapping at an interface between a gate dielectric and the semiconductor substrate for minimizing flicker noise.

    摘要翻译： 图像传感器包括光敏器件和至少一个晶体管，例如用于将感光器件累积的电荷转换成电信号的驱动晶体管。 至少一个晶体管包括由在沟道区域中产生导带偏移的多个不同掺杂区域组成的沟道区域。 这种导电带偏移增加了沟道区域中的电子迁移率，以最小化在栅极电介质和半导体衬底之间的界面处的电荷俘获，以最小化闪烁噪声。

    COLOR FILTER LAYER HAVING COLOR DECISION LAYER, IMAGE SENSING DEVICE HAVING THE SAME, AND METHOD OF FORMING COLOR FILTER LAYER
    6.
    发明申请
    COLOR FILTER LAYER HAVING COLOR DECISION LAYER, IMAGE SENSING DEVICE HAVING THE SAME, AND METHOD OF FORMING COLOR FILTER LAYER 审中-公开
    具有颜色决定层的彩色滤光层，具有该颜色决定层的图像感测装置以及形成彩色滤光层的方法

    公开(公告)号：US20070134474A1

    公开(公告)日：2007-06-14

    申请号：US11608674

    申请日：2006-12-08

    申请人： Jung-Chak Ahn ,  Bum-suk Kim ,  Yun-ho Jang ,  Sae-young Kim

    发明人： Jung-Chak Ahn ,  Bum-suk Kim ,  Yun-ho Jang ,  Sae-young Kim

    IPC分类号： B32B7/02

    CPC分类号： G02B5/22 ,  Y10T428/24942

    摘要： A color filter layer for use in an image sensing device includes first inorganic layers, each first inorganic layer having a first refractive index, and second inorganic layers, each second inorganic layer having a second refractive index, wherein the second refractive index is higher than the first refractive index, wherein the first and second inorganic layers are stacked on an optical sensor provided in the image sensing device to form a multi-layer, and the multi-layer includes fixed thickness layers each having a fixed thickness and a color decision layer having a thickness determined according to a wavelength band of light to be passed.

    摘要翻译： 用于图像感测装置的滤色器层包括第一无机层，每个第一无机层具有第一折射率，第二无机层，每个第二无机层具有第二折射率，其中第二折射率高于 第一折射率，其中第一和第二无机层堆叠在设置在图像感测装置中的光学传感器上以形成多层，并且多层包括各自具有固定厚度的固定厚度层和具有固定厚度的颜色判定层， 根据要通过的光的波长带确定的厚度。

    CMOS image sensor having buried channel MOS transistors
    7.
    发明申请
    CMOS image sensor having buried channel MOS transistors 审中-公开
    具有掩埋沟道MOS晶体管的CMOS图像传感器

    公开(公告)号：US20060108618A1

    公开(公告)日：2006-05-25

    申请号：US11280695

    申请日：2005-11-16

    申请人： Jung-Chak Ahn ,  Tetsuo Asaba ,  Yi-Tae Kim ,  Jung-Yeon Kim ,  Sung-In Hwang

    发明人： Jung-Chak Ahn ,  Tetsuo Asaba ,  Yi-Tae Kim ,  Jung-Yeon Kim ,  Sung-In Hwang

    IPC分类号： H01L31/113

    CPC分类号： H01L27/14609 ,  H01L27/14643

    摘要： A CMOS image sensor having buried channel MOS transistors is disclosed. The CMOS image sensor includes a photo converting device and a source follower transistor. The photo converting device generates a current signal and changes a voltage of a floating node in response to energy of an incident light. The source follower transistor has a source region doped with a first conductivity-type material, a drain region doped with the first conductivity-type material, a gate region doped with a second conductivity-type material that is complementary to the first conductivity-type material, and a buried channel having the first conductivity-type material. The buried channel is formed between the source region and the drain region and under the gate region.

    摘要翻译： 公开了一种具有掩埋沟道MOS晶体管的CMOS图像传感器。 CMOS图像传感器包括光转换装置和源极跟随器晶体管。 光转换装置响应于入射光的能量产生电流信号并改变浮动节点的电压。 源极跟随器晶体管具有掺杂有第一导电类型材料的源极区域，掺杂有第一导电类型材料的漏极区域，掺杂有与第一导电类型材料互补的第二导电类型材料的栅极区域 以及具有第一导电型材料的埋入通道。 掩埋沟道形成在源极区域和漏极区域之间以及栅极区域下方。

    CMOS image sensor and image sensing method using the same
    8.
    发明授权
    CMOS image sensor and image sensing method using the same 有权
    CMOS图像传感器和图像感应方法使用相同

    公开(公告)号：US07825970B2

    公开(公告)日：2010-11-02

    申请号：US11826588

    申请日：2007-07-17

    申请人： Sung-Ho Choi ,  Jung-Chak Ahn ,  Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong

    发明人： Sung-Ho Choi ,  Jung-Chak Ahn ,  Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong

    IPC分类号： H04N3/14 ,  H04N5/335

    CPC分类号： H01L27/14645 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14656 ,  H04N5/347 ,  H04N5/37457

    摘要： Example embodiments may provide a CMOS image sensor. The CMOS image sensor may include a plurality of unit blocks each including two unit pixels. Each unit block may include two photodiodes having a hexagonal shape, a floating diffusion shared by the two unit pixels, a first transfer transistor and a second transfer transistor between the floating diffusion and the two photodiodes, respectively, a reset transistor connected with the floating diffusion, a drive transistor with a gate connected with the floating diffusion, and/or a selection transistor connected to the drive transistor in series. Example embodiment CMOS image sensors may be used in digital cameras, mobile devices, computer cameras, or the like.

    摘要翻译： 示例性实施例可以提供CMOS图像传感器。 CMOS图像传感器可以包括多个单元块，每个单元块包括两个单位像素。 每个单元块可以包括具有六边形形状的两个光电二极管，由两个单位像素共享的浮动扩散，分别在浮动扩散和两个光电二极管之间的第一传输晶体管和第二传输晶体管，与浮动扩散器连接的复位晶体管 ，具有与浮动扩散连接的栅极的驱动晶体管和/或串联连接到驱动晶体管的选择晶体管。 示例性实施例CMOS图像传感器可以用于数码相机，移动设备，计算机照相机等。

    CMOS image sensor and image sensing method using the same
    9.
    发明申请
    CMOS image sensor and image sensing method using the same 有权
    CMOS图像传感器和图像感应方法使用相同

    公开(公告)号：US20080018765A1

    公开(公告)日：2008-01-24

    申请号：US11826588

    申请日：2007-07-17

    申请人： Sung-Ho Choi ,  Jung-Chak Ahn ,  Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong

    发明人： Sung-Ho Choi ,  Jung-Chak Ahn ,  Yi-Tae Kim ,  Young-Chan Kim ,  Hae-Kyung Kong

    IPC分类号： H04N3/14

    CPC分类号： H01L27/14645 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14656 ,  H04N5/347 ,  H04N5/37457

    摘要： Example embodiments may provide a CMOS image sensor. The CMOS image sensor may include a plurality of unit blocks each including two unit pixels. Each unit block may include two photodiodes having a hexagonal shape, a floating diffusion shared by the two unit pixels, a first transfer transistor and a second transfer transistor between the floating diffusion and the two photodiodes, respectively, a reset transistor connected with the floating diffusion, a drive transistor with a gate connected with the floating diffusion, and/or a selection transistor connected to the drive transistor in series. Example embodiment CMOS image sensors may be used in digital cameras, mobile devices, computer cameras, or the like.

    摘要翻译： 示例性实施例可以提供CMOS图像传感器。 CMOS图像传感器可以包括多个单元块，每个单元块包括两个单位像素。 每个单元块可以包括具有六边形形状的两个光电二极管，由两个单位像素共享的浮动扩散，分别在浮动扩散和两个光电二极管之间的第一传输晶体管和第二传输晶体管，与浮动扩散器连接的复位晶体管 ，具有与浮动扩散连接的栅极的驱动晶体管和/或串联连接到驱动晶体管的选择晶体管。 示例性实施例CMOS图像传感器可以用于数码相机，移动设备，计算机照相机等。

    BACKSIDE ILLUMINATION CMOS IMAGE SENSORS AND METHODS OF MANUFACTURING THE SAME
    10.
    发明申请
    BACKSIDE ILLUMINATION CMOS IMAGE SENSORS AND METHODS OF MANUFACTURING THE SAME 有权
    背景照明CMOS图像传感器及其制造方法

    公开(公告)号：US20110193147A1

    公开(公告)日：2011-08-11

    申请号：US12984404

    申请日：2011-01-04

    申请人： Jung-Chak Ahn ,  Kyung-ho Lee

    发明人： Jung-Chak Ahn ,  Kyung-ho Lee

    IPC分类号： H01L31/0232 ,  H01L31/18

    CPC分类号： H01L27/1464 ,  H01L27/1461 ,  H01L27/14645 ,  H01L27/14689

    摘要： Backside illumination CMOS image sensors having convex light-receiving faces and methods of manufacturing the same. A backside illumination CMOS image sensor includes a metal layer, an insulating layer and a photodiode. The insulating layer is on the metal layer. The photodiode is on the insulating layer, and a top face of the photodiode, which receives light, is curved. A method of manufacturing a backside illumination CMOS image sensor including a photodiode having a convex surface includes forming an island smaller than the photodiode on a portion of a light-receiving face of the photodiode, and annealing the island to form the photodiode having the convex light-receiving face.

    摘要翻译： 具有凸形光接收面的背面照明CMOS图像传感器及其制造方法。 背面照明CMOS图像传感器包括金属层，绝缘层和光电二极管。 绝缘层位于金属层上。 光电二极管在绝缘层上，并且接收光的光电二极管的顶面是弯曲的。 包括具有凸表面的光电二极管的背面照明CMOS图像传感器的制造方法包括在光电二极管的受光面的一部分上形成小于光电二极管的岛，并退火该岛以形成具有凸光的光电二极管 接受面孔