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    Semiconductor device having multi-gate insulating layers and methods of fabricating the same
    1.
    发明授权
    Semiconductor device having multi-gate insulating layers and methods of fabricating the same 有权

    公开(公告)号：US06642105B2

    公开(公告)日：2003-11-04

    申请号：US10131010

    申请日：2002-04-24

    申请人： Kyung-Hyun Kim ,  Chang-Ki Hong ,  U-In Chung ,  Bum-Soo Kim ,  Yoo-Cheol Shin ,  Kyu-Chan Park

    发明人： Kyung-Hyun Kim ,  Chang-Ki Hong ,  U-In Chung ,  Bum-Soo Kim ,  Yoo-Cheol Shin ,  Kyu-Chan Park

    IPC分类号： H01L21336

    CPC分类号： H01L21/823462 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11541

    摘要： A semiconductor device having multi-gate insulating layers and methods of fabricating the same are provided. The semiconductor device includes an isolation region disposed at a predetermined region of a semiconductor substrate. The isolation region defines at least one first active region and at least one second active region. The first active region is covered with a first gate insulating layer, and the second active region is covered with a second gate insulating layer which is thinner than the first gate insulating layer. Preferably, the top surface of the first gate insulating layer has the same height as the that of the second gate insulating layer. The isolation region is filled with an isolation layer which preferably covers the entire sidewalls of the first and second gate insulating layers. A typical method includes the step of selectively forming a first gate insulating layer at a predetermined region of a semiconductor substrate. A second gate insulating layer which is thinner than the first insulating layer is selectively formed at the surface of the semiconductor substrate adjacent to the first gate insulating layer. Preferably, the bottom surface of the first gate insulating layer is lower than that of the second gate insulating layer. The first and second gate insulating layers are covered with a conductive layer. The conductive layer, the first and second gate insulating layers, and the substrate are etched to form an isolation region, for example, a trench region, defining a first active region under the first gate insulating layer and a second active region under the second gate insulating. An isolation layer is formed in the trench region. The isolation layer preferably covers the entire sidewalls of the first and second gate insulating layers.

    LIQUID CRYSTAL DISPLAY
    4.
    发明申请
    LIQUID CRYSTAL DISPLAY 审中-公开
    液晶显示器

    公开(公告)号：US20090115714A1

    公开(公告)日：2009-05-07

    申请号：US12263166

    申请日：2008-10-31

    申请人： Hee-Seong Jeong ,  Gun-Shik Kim ,  Jae-Kwang Ryu ,  Jun-Sik Oh ,  Jae-Woo Bae ,  Myun-Gi Shim ,  Do-Hyung Park ,  Kyu-Chan Park ,  Sang-Yeol Hur ,  Dong-Gun Moon

    发明人： Hee-Seong Jeong ,  Gun-Shik Kim ,  Jae-Kwang Ryu ,  Jun-Sik Oh ,  Jae-Woo Bae ,  Myun-Gi Shim ,  Do-Hyung Park ,  Kyu-Chan Park ,  Sang-Yeol Hur ,  Dong-Gun Moon

    IPC分类号： G09G3/36

    CPC分类号： G09G3/3413 ,  G02F1/133514 ,  G02F1/133604 ,  G02F2001/133614 ,  G09G3/22 ,  G09G3/3426 ,  G09G3/3611 ,  G09G2320/0646 ,  H01J63/06

    摘要： A liquid crystal display (LCD) having color filters configured according to optical characteristics of a field emission backlight. The LCD includes: a display panel having color filters including red, green, and blue filters; and a backlight device at a rear side of the display panel and including a vacuum panel with a cold cathode electron source and a phosphor layer that is excited by electrons emitted from the cold cathode electron source to emit visible light. Here, a wavelength position corresponding to a half of a peak intensity of a transmission spectrum of the red filter is at from about 570 nm to about 622 nm, a wavelength position corresponding to a half of a peak intensity of a transmission spectrum of the blue filter is not greater than 520 nm, and/or a transmission spectrum of the green filter has a full width at half maximum (FWHM) ranging from about 60 nm to about 115 nm.

    摘要翻译： 一种液晶显示器（LCD），具有根据场致发射背光的光学特性配置的滤色器。 LCD包括：具有包括红色，绿色和蓝色滤色器的滤色器的显示面板; 以及位于显示面板背面的背光源装置，具有冷阴极电子源的真空面和由冷阴极电子源发射的电子发射可见光而被激发的荧光体层。 这里，对应于红色滤色器的透射光谱的峰值强度的一半的波长位置处于约570nm至约622nm，波长位置对应于蓝色的透射光谱的峰值强度的一半 滤波器不大于520nm，和/或绿色滤光器的透射光谱具有范围从约60nm至约115nm的半峰全宽（FWHM）。

    Low-voltage excited red phosphor and method of preparing the same
    10.
    发明授权
    Low-voltage excited red phosphor and method of preparing the same 失效
    低电压激发红磷光体及其制备方法

    公开(公告)号：US06818154B2

    公开(公告)日：2004-11-16

    申请号：US10060394

    申请日：2002-02-01

    申请人： Il Yu ,  Young-Chul You ,  Kyu-Chan Park

    发明人： Il Yu ,  Young-Chul You ,  Kyu-Chan Park

    IPC分类号： C09K1167

    CPC分类号： C09K11/7703

    摘要： A low-voltage excited red phosphor of the present invention has a matrix including an oxide of an alkaline earth metal and titanium and doping elements including a rare-earth element, a group 13 element, and Zn. The phosphor has an improved lifetime and high brightness.

    摘要翻译： 本发明的低电压激发红色荧光体具有包含碱土金属和钛的氧化物的基体以及包含稀土元素，第13族元素和Zn的掺杂元素。 荧光体具有改善的寿命和高亮度。