公开(公告)号：US09206507B2

公开(公告)日：2015-12-08

申请号：US14347544

申请日：2012-09-27

申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude ,  American Air Liquide, Inc.

发明人： Clément Lansalot-Matras ,  Julien Gatineau ,  Benjamin J. Jurcik, Jr.

IPC分类号： C23C16/18 ,  C23C16/455 ,  H01L21/285 ,  C23C16/42

CPC分类号： C23C16/18 ,  C23C16/42 ,  C23C16/45553 ,  H01L21/28518 ,  H01L21/28556

摘要： Disclosed are homoleptic diazabutadiene nickel precursors used for the vapor deposition of nickel-containing films. The precursors have the general formula Ni(R-DAD)2, wherein R-DAD stands for substituted 1,4-diazabuta-1,3-diene ligands. The sole presence of the Ni—N bonds was also considered to avoid too high intrusion of other elements, such as carbon, into the nickel-containing films. The flexibility of the Ni—N bond in terms of film deposition also allows using the molecules for nickel, nickel-nitride, nickel-carbonitride, nickel oxide or any other type of nickel-containing films. The nickel-containing film depositions can be carried out by thermal and/or plasma-enhanced CVD, ALD, and pulse CVD or any other type of depositions methods.

摘要翻译： 公开了用于含镍膜气相沉积的均匀二氮杂双环镍前体。 前体具有通式Ni（R-DAD）2，其中R-DAD代表取代的1,4-二氮杂双酚-1,3-二烯配体。 还考虑到Ni-N键的唯一存在，以避免其它元素如碳含量过高地侵入到含镍膜中。 Ni-N键在膜沉积方面的灵活性还允许将分子用于镍，氮化镍，镍 - 碳氮化物，氧化镍或任何其它类型的含镍膜。 含镍膜沉积可以通过热和/或等离子体增强的CVD，ALD和脉冲CVD或任何其它类型的沉积方法进行。

公开(公告)号：US09773683B2

公开(公告)日：2017-09-26

申请号：US14730917

申请日：2015-06-04

申请人： American Air Liquide, Inc.

发明人： Rahul Gupta ,  Venkateswara R. Pallem ,  Benjamin J. Jurcik, Jr.

IPC分类号： H01L21/311 ,  H01L21/3213 ,  H01L21/3065 ,  H01J37/32 ,  C23F4/00 ,  H01L43/12

CPC分类号： H01L21/32136 ,  C23F4/00 ,  H01J37/32 ,  H01J2237/334 ,  H01L43/12

摘要： Atomic layer or cyclic plasma etching chemistries and processes to etch films are disclosed. Films include Si, Ti, Ta, W, Al, Pd, Ir, Co, Fe, B, Cu, Ni, Pt, Ru, Mn, Mg, Cr, Au, alloys thereof, oxides thereof, nitrides thereof, and combinations thereof.