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1.发明授权Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing films depositions 有权镍二氮杂二烯前体，它们的合成及其在含镍膜沉积中的用途公开(公告)号：US09206507B2
公开(公告)日：2015-12-08
申请号：US14347544
申请日：2012-09-27
申请人： L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude , American Air Liquide, Inc.
IPC分类号： C23C16/18 , C23C16/455 , H01L21/285 , C23C16/42
CPC分类号： C23C16/18 , C23C16/42 , C23C16/45553 , H01L21/28518 , H01L21/28556
摘要： Disclosed are homoleptic diazabutadiene nickel precursors used for the vapor deposition of nickel-containing films. The precursors have the general formula Ni(R-DAD)2, wherein R-DAD stands for substituted 1,4-diazabuta-1,3-diene ligands. The sole presence of the Ni—N bonds was also considered to avoid too high intrusion of other elements, such as carbon, into the nickel-containing films. The flexibility of the Ni—N bond in terms of film deposition also allows using the molecules for nickel, nickel-nitride, nickel-carbonitride, nickel oxide or any other type of nickel-containing films. The nickel-containing film depositions can be carried out by thermal and/or plasma-enhanced CVD, ALD, and pulse CVD or any other type of depositions methods.
摘要翻译： 公开了用于含镍膜气相沉积的均匀二氮杂双环镍前体。 前体具有通式Ni（R-DAD）2，其中R-DAD代表取代的1,4-二氮杂双酚-1,3-二烯配体。 还考虑到Ni-N键的唯一存在，以避免其它元素如碳含量过高地侵入到含镍膜中。 Ni-N键在膜沉积方面的灵活性还允许将分子用于镍，氮化镍，镍 - 碳氮化物，氧化镍或任何其它类型的含镍膜。 含镍膜沉积可以通过热和/或等离子体增强的CVD，ALD和脉冲CVD或任何其它类型的沉积方法进行。
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公开(公告)号：US11549182B2
公开(公告)日：2023-01-10
申请号：US17489864
申请日：2021-09-30
IPC分类号： C23C16/455 , C23C16/40 , C23C16/30
摘要： Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(=O)2(OR)2 Formula I, M(=O)(NR2)4 Formula II, M(=O)2(NR2)2 Formula III, M(=NR)2(OR)2 Formula IV, and M(=O)(OR)4 Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR′3, wherein R′ is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.
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3.发明授权公开(公告)号：US09868753B2
公开(公告)日：2018-01-16
申请号：US15297191
申请日：2016-10-19
IPC分类号： C23C16/00 , C07F17/00 , C07F7/30 , C07F7/00 , C23C16/40 , C23C16/455 , C23C16/18 , C23C16/28
CPC分类号： C07F17/00 , C07F7/003 , C07F7/30 , C23C16/18 , C23C16/28 , C23C16/40 , C23C16/405 , C23C16/455 , C23C16/45553
摘要： Disclosed are Germanium- and Zirconium-containing precursors having one of the following formulae: wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; and a C1-C5 linear, branched, or cyclic fluoroalkyl groups. Also disclosed are methods of synthesizing the disclosed precursors and using the same to deposit Zirconium-containing films on substrates via vapor deposition processes.
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4.发明授权公开(公告)号：US09691771B2
公开(公告)日：2017-06-27
申请号：US15130675
申请日：2016-04-15
IPC分类号： C07F9/00 , H01L27/108 , H01L21/285 , H01L49/02 , C23C16/18 , C23C16/32 , C23C16/34 , C23C16/40 , C23C16/42 , C23C16/455 , C23C16/50 , H01G13/00 , H01G4/10 , H01G4/20
CPC分类号： H01L27/1085 , C23C16/18 , C23C16/32 , C23C16/34 , C23C16/405 , C23C16/42 , C23C16/45525 , C23C16/45553 , C23C16/50 , H01G4/10 , H01G4/20 , H01G13/003 , H01L21/28556 , H01L21/28568 , H01L27/10805 , H01L28/60
摘要： Vanadium-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Vanadium-containing films on one or more substrates via vapor deposition processes using the Vanadium-containing film forming compositions.
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公开(公告)号：US20210246553A1
公开(公告)日：2021-08-12
申请号：US17244990
申请日：2021-04-30
发明人： Rocio ARTEAGA , Raphael Rochat , Antonio Sanchez , Jean-Marc Girard , Nicolas Blasco , Santiago Marques-Gonzalez , Clément Lansalot-Matras , Jooho Lee , Zhiwen Wan
IPC分类号： C23C16/455 , C07F11/00
摘要： Disclosed are Group 6 transition metal-containing thin film forming precursors to deposit Group 6 transition metal-containing films on one or more substrates via vapor deposition processes.
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6.发明申请METHOD FOR THE DEPOSITION OF A RUTHENIUM CONTAINING FILM USING ARENE DIAZADIENE RUTHENIUM(0) PRECURSORS 有权使用ARENE DIAZADIENE RUTHENIUM（0）PRECURSORS沉积包含薄膜的方法公开(公告)号：US20150056384A1
公开(公告)日：2015-02-26
申请号：US14377294
申请日：2012-11-30
CPC分类号： C23C16/18 , C07F15/0046 , C23C16/50 , H01L21/28556 , H01L21/28562 , H01L21/76841
摘要： The invention concerns the use of ruthenium containing precursors having the formula (1) wherein R1, R2 . . . R10 are independently selected from H, C1-C4 linear, branched, or cyclic alkyl group, C1-C4 linear, branched, or cyclic alkylsilyl group (mono, bis, or trisalkyl), C1-C4 linear, branched, or cyclic alkylamino group, or a C1-C4 linear, branched, or cyclic fluoroalkyl group (totally fluorinated or not); for the deposition of a Ru containing film on a substrate.
摘要翻译： 本发明涉及具有式（1）的含钌前体的用途，其中R1，R2。 。 。 R 10独立地选自H，C 1 -C 4直链，支链或环状烷基，C 1 -C 4直链，支链或环状烷基甲硅烷基（单，双或三烷基），C 1 -C 4直链，支链或环状烷基氨基 ，或C 1 -C 4直链，支链或环状氟代烷基（全氟化或不全部）。 用于在基板上沉积含Ru膜。
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公开(公告)号：US10731251B2
公开(公告)日：2020-08-04
申请号：US16107458
申请日：2018-08-21
IPC分类号： C23C16/455 , C23C16/40 , C23C16/30
摘要： Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(═O)2(OR)2 Formula I, M(═O)(NR2)4 Formula II, M(═O)2(NR2)2 Formula III, M(═NR)2(OR)2 Formula IV, and M(═O)(OR)4 Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR′3, wherein R′ is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.
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8.发明授权公开(公告)号：US10106568B2
公开(公告)日：2018-10-23
申请号：US15337840
申请日：2016-10-28
发明人： Christian Dussarrat , Jean-Marc Girard , Hana Ishii , Clément Lansalot-Matras , Julien Lieffrig
IPC分类号： C07F17/00 , H01L27/108 , H01L21/285 , B05D1/00
摘要： Disclosed are Hafnium-containing film forming compositions comprising Silicon- and Hafnium-containing precursors having one of the following formula: wherein each R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; or a C1-C5 linear, branched, or cyclic fluoroalkyl group. Also disclosed are methods of synthesizing the disclosed compositions and using the same to deposit Hafnium-containing thin films on substrates via vapor deposition processes.
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9.发明授权公开(公告)号：US09786671B2
公开(公告)日：2017-10-10
申请号：US15130529
申请日：2016-04-15
IPC分类号： H01L27/108 , H01L21/285 , H01L49/02 , C07F9/00 , C23C16/455
CPC分类号： H01L27/1085 , C07F9/005 , C23C16/45525 , C23C16/45553 , H01L21/28556 , H01L21/28568 , H01L27/10805 , H01L28/60
摘要： Niobium-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Niobium-containing films on one or more substrates via vapor deposition processes using the Niobium-containing film forming compositions.
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公开(公告)号：US11162175B2
公开(公告)日：2021-11-02
申请号：US16809136
申请日：2020-03-04
IPC分类号： C23C16/455 , C23C16/40 , C23C16/30
摘要： Disclosed are Group 6 film forming compositions comprising Group 6 transition metal-containing precursors selected from the group consisting of: M(=O)2(OR)2 Formula I, M(=O)(NR2)4 Formula II, M(=O)2(NR2)2 Formula III, M(=NR)2(OR)2 Formula IV, and M(=O)(OR)4 Formula V, wherein M is Mo or W and each R is independently H, a C1 to C6 alkyl group, or SiR′3, wherein R′ is H or a C1 to C6 alkyl group. Also disclosed are methods of synthesizing and using the disclosed compositions to deposit Group 6 transition metal-containing films on substrates via vapor deposition processes.
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