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公开(公告)号：US20230298859A1
公开(公告)日：2023-09-21
申请号：US18010423
申请日：2021-12-14
发明人： Andrew Stratton BRAVO , Pilyeon PARK , Serge KOSCHE , Julien Augustin MONBEIG , Mark KAWAGUCHI , Stephen WHITTEN , Shih-Chung KON
CPC分类号： H01J37/32422 , H01J37/32357 , H01J37/3244 , H05B1/0252 , H01J2237/334
摘要： A showerhead for a processing chamber in a substrate processing system includes an upper portion having a lower surface and an upper surface and a faceplate. A lower surface of the faceplate is below the lower surface of the upper portion such that the showerhead extends into an interior volume of the processing chamber and the faceplate includes a plurality of holes arranged in a pattern to provide fluid communication between a remote plasma source above the showerhead and the interior volume of the processing chamber. A sidewall extends upward from an outer edge of the faceplate between the faceplate and the upper portion and the upper portion extends radially outward from the sidewall of the showerhead and is configured to be mounted on a sidewall of the processing chamber. A heater is embedded in the upper portion of the showerhead.
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公开(公告)号：US20240266147A1
公开(公告)日：2024-08-08
申请号：US18640505
申请日：2024-04-19
发明人： Andrew Stratton BRAVO , Chih-Hsun HSU , Serge KOSCHE , Stephen WHITTEN , Shih-Chung KON , Mark KAWAGUCHI , Himanshu CHOKSHI , Dan ZHANG , Gnanamani AMBUROSE
IPC分类号： H01J37/32
CPC分类号： H01J37/32422 , H01J37/321 , H01J37/32357 , H01J37/32467 , H01J37/32174
摘要： A dual ion filter is arranged between upper and lower chambers of a substrate processing system. The dual ion filter includes upper and lower filters. The upper filter includes a first plurality of through holes configured to filter ions from a plasma in the upper chamber. The lower filter includes a second plurality of through holes configured to control plasma uniformity in the lower chamber. A diameter of the first plurality of through holes of the upper filter is less than a diameter of the second plurality of through holes of the lower filter. A number of the first plurality of through holes of the upper filter is greater than a number of the second plurality of through holes of the lower filter.
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公开(公告)号：US20220076924A1
公开(公告)日：2022-03-10
申请号：US17424381
申请日：2020-01-21
发明人： Andrew Stratton BRAVO , Chih-Hsun HSU , Serge KOSCHE , Stephen WHITTEN , Shih-Chung KON , Mark KAWAGUCHI , Himanshu CHOKSHI , Dan ZHANG , Gnanamani AMBUROSE
IPC分类号： H01J37/32
摘要： A substrate processing system includes an upper chamber and a gas delivery system to supply a gas mixture to the upper chamber. An RF generator generates plasma in the upper chamber. A lower chamber includes a substrate support. A dual ion filter is arranged between the upper chamber and the lower chamber. The dual ion filter includes an upper filter including a first plurality of through holes configured to filter ions. A lower filter includes a second plurality of through holes configured to control plasma uniformity.
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