-
1.发明公开公开(公告)号：US20240258130A1
公开(公告)日：2024-08-01
申请号：US18630683
申请日：2024-04-09
发明人： Dengliang YANG , Haoquan FANG , David CHEUNG , Gnanamani AMBUROSE , Eunsuk KO , Wei Yi LUO , Dan ZHANG
IPC分类号： H01L21/67 , B08B5/02 , H01J37/32 , H01L21/311
CPC分类号： H01L21/67069 , H01J37/32146 , H01J37/32422 , H01J37/32449 , H01J37/32623 , H01J37/32724 , H01J37/32972 , H01J37/3299 , H01L21/31138 , B08B5/023 , H01J37/321 , H01J2237/334
摘要： Several designs of a gas distribution device for a substrate processing system are provided. The gas distribution device includes a dual plenum showerhead. Additionally, designs for a light blocking structure used with the showerheads are also provided.
-
公开(公告)号：US20240266147A1
公开(公告)日：2024-08-08
申请号：US18640505
申请日：2024-04-19
发明人： Andrew Stratton BRAVO , Chih-Hsun HSU , Serge KOSCHE , Stephen WHITTEN , Shih-Chung KON , Mark KAWAGUCHI , Himanshu CHOKSHI , Dan ZHANG , Gnanamani AMBUROSE
IPC分类号： H01J37/32
CPC分类号： H01J37/32422 , H01J37/321 , H01J37/32357 , H01J37/32467 , H01J37/32174
摘要： A dual ion filter is arranged between upper and lower chambers of a substrate processing system. The dual ion filter includes upper and lower filters. The upper filter includes a first plurality of through holes configured to filter ions from a plasma in the upper chamber. The lower filter includes a second plurality of through holes configured to control plasma uniformity in the lower chamber. A diameter of the first plurality of through holes of the upper filter is less than a diameter of the second plurality of through holes of the lower filter. A number of the first plurality of through holes of the upper filter is greater than a number of the second plurality of through holes of the lower filter.
-
公开(公告)号：US20230352278A1
公开(公告)日：2023-11-02
申请号：US17913935
申请日：2021-03-26
发明人： Xuefeng HUA , Jack CHEN , Gnanamani AMBUROSE , Dan ZHANG , Chang-Wei HUANG , Chia-Shin LIN
IPC分类号： H01J37/32
CPC分类号： H01J37/32642 , H01J2237/3321 , H01J2237/3341
摘要： A plasma-exclusion-zone ring for a substrate processing system that is configured to process a substrate includes a ring-shaped body, an upper portion of the ring-shaped body, a base and a plasma-exclusion-zone ring notch. The upper portion of the ring-shaped body defines a radially inner surface and a top surface. The base of the ring-shaped body defines a radially outer surface, a first bottom surface extending radially inward from the radially outer surface, and a second bottom surface extending radially inward from the first bottom surface. The plasma-exclusion-zone ring notch is proportional to an alignment notch of the substrate. The first bottom surface is tapered and extends at an acute angle from the second bottom surface to the radially outer surface. The first bottom surface is configured to extend over and oppose a periphery of the substrate.
-
公开(公告)号：US20220076924A1
公开(公告)日：2022-03-10
申请号：US17424381
申请日：2020-01-21
发明人： Andrew Stratton BRAVO , Chih-Hsun HSU , Serge KOSCHE , Stephen WHITTEN , Shih-Chung KON , Mark KAWAGUCHI , Himanshu CHOKSHI , Dan ZHANG , Gnanamani AMBUROSE
IPC分类号： H01J37/32
摘要： A substrate processing system includes an upper chamber and a gas delivery system to supply a gas mixture to the upper chamber. An RF generator generates plasma in the upper chamber. A lower chamber includes a substrate support. A dual ion filter is arranged between the upper chamber and the lower chamber. The dual ion filter includes an upper filter including a first plurality of through holes configured to filter ions. A lower filter includes a second plurality of through holes configured to control plasma uniformity.
-
5.发明公开公开(公告)号：US20230369076A1
公开(公告)日：2023-11-16
申请号：US18217696
申请日：2023-07-03
发明人： Dengliang YANG , Haoquan FANG , David CHEUNG , Gnanamani AMBUROSE , Eunsuk KO , Weiyi LUO , Dan ZHANG
IPC分类号： H01L21/67 , H01J37/32 , H01L21/311
CPC分类号： H01L21/67069 , H01J37/32422 , H01J37/32449 , H01J37/32724 , H01J37/32146 , H01J37/32623 , H01J37/32972 , H01L21/31138 , H01J37/3299 , B08B5/023
摘要： Several designs of a gas distribution device for a substrate processing system are provided. The gas distribution device includes a dual plenum showerhead. Additionally, designs for a light blocking structure used with the showerheads are also provided.
-
6.发明公开公开(公告)号：US20240258131A1
公开(公告)日：2024-08-01
申请号：US18630726
申请日：2024-04-09
发明人： Dengliang YANG , Haoquan FANG , David CHEUNG , Gnanamani AMBUROSE , Eunsuk KO , Wei Yi LUO , Dan ZHANG
IPC分类号： H01L21/67 , B08B5/02 , H01J37/32 , H01L21/311
CPC分类号： H01L21/67069 , H01J37/32146 , H01J37/32422 , H01J37/32449 , H01J37/32623 , H01J37/32724 , H01J37/32972 , H01J37/3299 , H01L21/31138 , B08B5/023 , H01J37/321 , H01J2237/334
摘要： Several designs of a gas distribution device for a substrate processing system are provided. The gas distribution device includes a dual plenum showerhead. Additionally, designs for a light blocking structure used with the showerheads are also provided.
-
-
-
-
-
搜索结果
6 条记录 (耗时 0.013 秒)
