公开(公告)号：US20240266147A1

公开(公告)日：2024-08-08

申请号：US18640505

申请日：2024-04-19

Applicant: LAM RESEARCH CORPORATION

Inventor： Andrew Stratton BRAVO ,  Chih-Hsun HSU ,  Serge KOSCHE ,  Stephen WHITTEN ,  Shih-Chung KON ,  Mark KAWAGUCHI ,  Himanshu CHOKSHI ,  Dan ZHANG ,  Gnanamani AMBUROSE

IPC: H01J37/32

CPC classification number: H01J37/32422 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32467 ,  H01J37/32174

Abstract: A dual ion filter is arranged between upper and lower chambers of a substrate processing system. The dual ion filter includes upper and lower filters. The upper filter includes a first plurality of through holes configured to filter ions from a plasma in the upper chamber. The lower filter includes a second plurality of through holes configured to control plasma uniformity in the lower chamber. A diameter of the first plurality of through holes of the upper filter is less than a diameter of the second plurality of through holes of the lower filter. A number of the first plurality of through holes of the upper filter is greater than a number of the second plurality of through holes of the lower filter.

公开(公告)号：US20220076924A1

公开(公告)日：2022-03-10

申请号：US17424381

申请日：2020-01-21

Applicant: LAM RESEARCH CORPORATION

Inventor： Andrew Stratton BRAVO ,  Chih-Hsun HSU ,  Serge KOSCHE ,  Stephen WHITTEN ,  Shih-Chung KON ,  Mark KAWAGUCHI ,  Himanshu CHOKSHI ,  Dan ZHANG ,  Gnanamani AMBUROSE

IPC: H01J37/32

Abstract: A substrate processing system includes an upper chamber and a gas delivery system to supply a gas mixture to the upper chamber. An RF generator generates plasma in the upper chamber. A lower chamber includes a substrate support. A dual ion filter is arranged between the upper chamber and the lower chamber. The dual ion filter includes an upper filter including a first plurality of through holes configured to filter ions. A lower filter includes a second plurality of through holes configured to control plasma uniformity.

公开(公告)号：US20230035732A1

公开(公告)日：2023-02-02

申请号：US17963615

申请日：2022-10-11

Applicant: LAM RESEARCH CORPORATION

Inventor： Ji ZHU ,  Mark KAWAGUCHI ,  Nathan MUSSELWHITE

IPC: H01L21/306 ,  H01L21/02

Abstract: A method for treating a substrate includes arranging a substrate in a processing chamber. At least one of a vaporized solvent and a gas mixture including the solvent is supplied to the processing chamber to form a conformal liquid layer of the solvent on exposed surfaces of the substrate. The at least one of the vaporized solvent and the gas mixture is removed from the processing chamber. A reactive gas including a halogen species is supplied to the processing chamber. The conformal liquid layer adsorbs the reactive gas to form a reactive liquid layer that etches the exposed surfaces of the substrate.

公开(公告)号：US20220356585A1

公开(公告)日：2022-11-10

申请号：US17621283

申请日：2020-06-23

Applicant: LAM RESEARCH CORPORATION

Inventor： David MUI ,  Gerome Michel Dominique MELAET ,  Nathan MUSSELWHITE ,  Michael RAVKIN ,  Mark KAWAGUCHI ,  Ilia KALINOVSKI

IPC: C23F1/12 ,  C23F1/08

Abstract: A method for cleaning a substrate includes arranging the substrate in a processing chamber; controlling a pressure of the processing chamber to a predetermined pressure range; controlling a temperature of the processing chamber to a predetermined temperature range; and supplying a vapor mixture including a metal chelating vapor for a first period to remove metal contamination from surfaces of the substrate.

公开(公告)号：US20190015878A1

公开(公告)日：2019-01-17

申请号：US16017445

申请日：2018-06-25

Applicant: LAM RESEARCH CORPORATION

Inventor： Mark KAWAGUCHI ,  Gregory BLACHUT

IPC: B08B7/00 ,  H01L21/02 ,  H01L21/66

Abstract: A method for cleaning a substrate includes supplying a vapor to a processing chamber to grow a polymer film on a substrate in the processing chamber; adding a solution to the polymer film on the substrate to create a viscoelastic fluid on the substrate; and removing the viscoelastic fluid to remove particle contaminants from the substrate.

公开(公告)号：US20240363355A1

公开(公告)日：2024-10-31

申请号：US18771442

申请日：2024-07-12

Applicant: LAM RESEARCH CORPORATION

Inventor： Ji ZHU ,  Mark KAWAGUCHI ,  Nathan MUSSELWHITE

IPC: H01L21/306 ,  H01L21/02

CPC classification number: H01L21/30604 ,  H01L21/02057

Abstract: A method for treating a substrate in a processing chamber includes forming a conformal liquid layer on the substrate by concurrently supplying a vaporized solvent and a reactive gas including a halogen species to the processing chamber. The method includes forming a reactive liquid layer on the substrate due to the conformal liquid layer adsorbing the reactive gas and etching at least a portion of the substrate by the reactive liquid layer. The etching forms a gaseous byproduct without forming residue.

公开(公告)号：US20230298859A1

公开(公告)日：2023-09-21

申请号：US18010423

申请日：2021-12-14

Applicant: LAM RESEARCH CORPORATION

Inventor： Andrew Stratton BRAVO ,  Pilyeon PARK ,  Serge KOSCHE ,  Julien Augustin MONBEIG ,  Mark KAWAGUCHI ,  Stephen WHITTEN ,  Shih-Chung KON

IPC: H01J37/32 ,  H05B1/02

CPC classification number: H01J37/32422 ,  H01J37/32357 ,  H01J37/3244 ,  H05B1/0252 ,  H01J2237/334

Abstract: A showerhead for a processing chamber in a substrate processing system includes an upper portion having a lower surface and an upper surface and a faceplate. A lower surface of the faceplate is below the lower surface of the upper portion such that the showerhead extends into an interior volume of the processing chamber and the faceplate includes a plurality of holes arranged in a pattern to provide fluid communication between a remote plasma source above the showerhead and the interior volume of the processing chamber. A sidewall extends upward from an outer edge of the faceplate between the faceplate and the upper portion and the upper portion extends radially outward from the sidewall of the showerhead and is configured to be mounted on a sidewall of the processing chamber. A heater is embedded in the upper portion of the showerhead.

公开(公告)号：US20210249274A1

公开(公告)日：2021-08-12

申请号：US16973489

申请日：2019-06-07

Applicant: LAM RESEARCH CORPORATION

Inventor： Ji ZHU ,  Mark KAWAGUCHI ,  Nathan MUSSELWHITE

IPC: H01L21/306 ,  H01L21/02

Abstract: A method for treating a substrate includes arranging a substrate in a processing chamber. At least one of a vaporized solvent and a gas mixture including the solvent is supplied to the processing chamber to form a conformal liquid layer of the solvent on exposed surfaces of the substrate. The at least one of the vaporized solvent and the gas mixture is removed from the processing chamber. A reactive gas including a halogen species is supplied to the processing chamber. The conformal liquid layer adsorbs the reactive gas to form a reactive liquid layer that etches the exposed surfaces of the substrate.