公开(公告)号：US20180148835A1

公开(公告)日：2018-05-31

申请号：US15363558

申请日：2016-11-29

Applicant: Lam Research Corporation

Inventor： Ann Erickson ,  Keith Gaff ,  Devin Ramdutt

IPC: C23C16/44 ,  H01L21/683

CPC classification number: C23C16/4411 ,  C23C16/463 ,  C23C16/505 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6875

Abstract: A method is provided and includes: determining a temperature distribution pattern across a substrate or a support plate of a substrate support; determining, based on the temperature distribution pattern, a number of masks to apply to a top surface of the support plate, where the number of masks is greater than or equal to two; and determining patterns of the masks based on the temperature distribution pattern; and applying the masks over the top surface. The method further includes: performing a first machining process to remove a portion of the support plate unprotected by the masks to form first mesas and first recessed areas between the first mesas; removing a first mask from the support plate; performing a second machining process to form second recessed areas and at least one of second mesas or a first seal band area; and removing a second mask from the support plate.

公开(公告)号：US09953825B2

公开(公告)日：2018-04-24

申请号：US13683305

申请日：2012-11-21

Applicant: Lam Research Corporation

Inventor： David Carman ,  Travis Taylor ,  Devin Ramdutt

IPC: H01L21/02 ,  H01L21/683 ,  H01J37/32

CPC classification number: H01L21/02 ,  H01J37/32091 ,  H01J37/32477 ,  H01L21/6831

Abstract: An apparatus and system for plasma processing a substrate using RF power includes a chamber having walls for housing an electrostatic chuck (ESC) and a top electrode. The top electrode is oriented opposite the ESC to define a processing region. An inner line with a tubular shaped wall is defined within and is spaced apart from the walls of the chamber and is oriented to surround the processing region. The tubular shaped wall extends a height between a top and a bottom. The tubular shaped wall has functional openings for substrate access and facilities access and dummy openings oriented to define symmetry for selected ones of the functional openings. A plurality of straps are connected to the bottom of the tubular shaped wall of the inner liner and are electrically coupled to a ground ring within the chamber to provide an RF power return path during plasma processing.

公开(公告)号：US12227840B2

公开(公告)日：2025-02-18

申请号：US17880855

申请日：2022-08-04

Applicant: LAM RESEARCH CORPORATION

Inventor： Keith Gaff ,  Devin Ramdutt ,  Ann Erickson

IPC: C23C16/44 ,  C23C16/46 ,  C23C16/505 ,  H01L21/67 ,  H01L21/687

Abstract: A method is provided and includes: determining a temperature distribution pattern across a substrate or a support plate of a substrate support; determining, based on the temperature distribution pattern, a number of masks to apply to a top surface of the support plate, where the number of masks is greater than or equal to two; and determining patterns of the masks based on the temperature distribution pattern; and applying the masks over the top surface. The method further includes: performing a first machining process to remove a portion of the support plate unprotected by the masks to form first mesas and first recessed areas between the first mesas; removing a first mask from the support plate; performing a second machining process to form second recessed areas and at least one of second mesas or a first seal band area; and removing a second mask from the support plate.