公开(公告)号：US12227840B2

公开(公告)日：2025-02-18

申请号：US17880855

申请日：2022-08-04

Applicant: LAM RESEARCH CORPORATION

Inventor： Keith Gaff ,  Devin Ramdutt ,  Ann Erickson

IPC: C23C16/44 ,  C23C16/46 ,  C23C16/505 ,  H01L21/67 ,  H01L21/687

Abstract: A method is provided and includes: determining a temperature distribution pattern across a substrate or a support plate of a substrate support; determining, based on the temperature distribution pattern, a number of masks to apply to a top surface of the support plate, where the number of masks is greater than or equal to two; and determining patterns of the masks based on the temperature distribution pattern; and applying the masks over the top surface. The method further includes: performing a first machining process to remove a portion of the support plate unprotected by the masks to form first mesas and first recessed areas between the first mesas; removing a first mask from the support plate; performing a second machining process to form second recessed areas and at least one of second mesas or a first seal band area; and removing a second mask from the support plate.

公开(公告)号：US12131890B2

公开(公告)日：2024-10-29

申请号：US17435340

申请日：2020-03-04

Applicant: Lam Research Corporation

Inventor： Ann Erickson ,  Darrell Ehrlich

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32724 ,  H01J37/32642 ,  H01L21/6833 ,  H01J37/32082 ,  H01J2237/2007 ,  H01J2237/334

Abstract: An electrostatic chuck system for a plasma processing chamber is provided. A base plate comprising Al—SiC is provided. A ceramic plate is disposed over the base plate. A bonding layer bonds the ceramic plate to the base plate.

公开(公告)号：US20180148835A1

公开(公告)日：2018-05-31

申请号：US15363558

申请日：2016-11-29

Applicant: Lam Research Corporation

Inventor： Ann Erickson ,  Keith Gaff ,  Devin Ramdutt

IPC: C23C16/44 ,  H01L21/683

CPC classification number: C23C16/4411 ,  C23C16/463 ,  C23C16/505 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6875

Abstract: A method is provided and includes: determining a temperature distribution pattern across a substrate or a support plate of a substrate support; determining, based on the temperature distribution pattern, a number of masks to apply to a top surface of the support plate, where the number of masks is greater than or equal to two; and determining patterns of the masks based on the temperature distribution pattern; and applying the masks over the top surface. The method further includes: performing a first machining process to remove a portion of the support plate unprotected by the masks to form first mesas and first recessed areas between the first mesas; removing a first mask from the support plate; performing a second machining process to form second recessed areas and at least one of second mesas or a first seal band area; and removing a second mask from the support plate.