公开(公告)号：US20190267218A1

公开(公告)日：2019-08-29

申请号：US15903682

申请日：2018-02-23

Applicant: LAM RESEARCH CORPORATION

Inventor： Feng Wang ,  Keith Gaff ,  Christopher Kimball

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67 ,  H01J37/244

Abstract: An electrostatic chuck for a substrate processing system is provided. The electrostatic chuck includes: a top plate configured to electrostatically clamp to a substrate and formed of ceramic; an intermediate layer disposed below the top plate; and a baseplate disposed below the intermediate layer and formed of ceramic. The intermediate layer bonds the top plate to the baseplate.

公开(公告)号：US09392643B2

公开(公告)日：2016-07-12

申请号：US14062216

申请日：2013-10-24

Applicant: Lam Research Corporation

Inventor： Harmeet Singh ,  Keith Gaff ,  Neil Benjamin ,  Keith Comendant

IPC: H01L21/68 ,  H01L23/28 ,  H01L23/52 ,  F27B5/14 ,  F27D11/02 ,  H05B3/00 ,  C23C14/54 ,  C23C16/458 ,  H01L21/67 ,  H01L21/3065 ,  H05B1/02 ,  H05B3/26 ,  H01L21/683

CPC classification number: H01L21/67103 ,  C23C14/50 ,  C23C14/541 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/509 ,  H01J37/32091 ,  H01J37/32724 ,  H01J2237/327 ,  H01J2237/332 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01J2237/3342 ,  H01J2237/3343 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H05B1/0233 ,  H05B3/00 ,  H05B3/26 ,  Y10T29/49083 ,  Y10T29/49099

Abstract: An exemplary method for manufacturing a heating plate for a substrate support assembly includes forming holes in at least one sheet, printing a slurry of conductor powder, or pressing a precut metal foil, or spraying a slurry of conductor powder, on the at least one sheet to form the planar heater zones, the power supply lines, and power return lines. The holes in the at least one sheet are filled with a slurry of conductor powder to form power supply and power return vias. The sheets are then aligned, pressed, and bonded to form the heating plate.

Abstract translation: 用于制造用于基板支撑组件的加热板的示例性方法包括在至少一个片材中形成孔，在导体粉末的浆料上印刷，或者将预切割金属箔压制，或者将导体粉末的浆料喷涂在至少一个片材上 以形成平面加热器区域，电源线和电力返回线。 至少一个片材中的孔填充有导体粉末的浆料，以形成电源和电源返回通孔。 然后将片材对准，压制和结合以形成加热板。

公开(公告)号：US20150179412A1

公开(公告)日：2015-06-25

申请号：US14136953

申请日：2013-12-20

Applicant: Lam Research Corporation

Inventor： Ambarish Chhatre ,  David Schaefer ,  Keith Gaff

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32642 ,  H01J37/32477 ,  H01J37/32715

Abstract: An edge ring configured to surround an outer periphery of a substrate support in a plasma processing chamber wherein plasma is generated and used to process a substrate is disclosed, the substrate support comprising a base plate, a top plate, an elastomer seal assembly between the base plate and the top plate, and an elastomer seal configured to surround the elastomer seal assembly. The edge ring includes an upper inner surface having an edge step directed towards an interior portion of the edge ring and arranged to extend from an outer periphery of a top surface of the top plate to an outer periphery of an upper surface of the base plate, a lower inner surface, an outer surface, a lower surface extending from the lower inner surface to the outer surface, and a top surface extending from the outer surface to the upper inner surface.

Abstract translation: 公开了一种边缘环，其被配置为围绕等离子体处理室中的衬底支撑件的外周围，其中产生等离子体并用于处理衬底，所述衬底支撑件包括基板，顶板，基底之间的弹性体密封组件 板和顶板，以及构造成围绕弹性体密封组件的弹性体密封件。 边缘环包括上内表面，其具有朝向边缘环的内部的边缘台阶，并且布置成从顶板的顶表面的外周延伸到基板的上表面的外周， 下内表面，外表面，从下内表面延伸到外表面的下表面，以及从外表面延伸到上内表面的顶表面。

公开(公告)号：US20140096909A1

公开(公告)日：2014-04-10

申请号：US14101782

申请日：2013-12-10

Applicant: Lam Research Corporation

Inventor： Harmeet Singh ,  Keith Gaff ,  Neil Benjamin ,  Keith Comendant

IPC: H01L21/67

CPC classification number: H01L21/67103 ,  C23C14/50 ,  C23C14/541 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/509 ,  H01J37/32091 ,  H01J37/32724 ,  H01J2237/327 ,  H01J2237/332 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/334 ,  H01J2237/3342 ,  H01J2237/3343 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6831 ,  H05B1/0233 ,  H05B3/00 ,  H05B3/26 ,  Y10T29/49083 ,  Y10T29/49099

Abstract: A heating plate of a semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a first layer with an array of heater zones operable to tune a spatial temperature profile on the semiconductor substrate, and a second layer with one or more primary heaters to provide mean temperature control of the semiconductor substrate. The heating plate can be incorporated in a substrate support wherein a switching device independently supplies power to each one of the heater zones to provide time-averaged power to each of the heater zones by time divisional multiplexing of the switches.

Abstract translation: 用于在等离子体处理室中支撑半导体衬底的半导体衬底支撑体的加热板包括具有加热器阵列阵列的第一层，其可操作以调节半导体衬底上的空间温度分布，以及具有一个或多个初级加热器的第二层 以提供半导体衬底的平均温度控制。 加热板可以结合在基板支撑件中，其中开关装置独立地向每个加热器区域供电，以通过开关的时分复用为每个加热器区域提供时间平均的功率。

公开(公告)号：US12227840B2

公开(公告)日：2025-02-18

申请号：US17880855

申请日：2022-08-04

Applicant: LAM RESEARCH CORPORATION

Inventor： Keith Gaff ,  Devin Ramdutt ,  Ann Erickson

IPC: C23C16/44 ,  C23C16/46 ,  C23C16/505 ,  H01L21/67 ,  H01L21/687

Abstract: A method is provided and includes: determining a temperature distribution pattern across a substrate or a support plate of a substrate support; determining, based on the temperature distribution pattern, a number of masks to apply to a top surface of the support plate, where the number of masks is greater than or equal to two; and determining patterns of the masks based on the temperature distribution pattern; and applying the masks over the top surface. The method further includes: performing a first machining process to remove a portion of the support plate unprotected by the masks to form first mesas and first recessed areas between the first mesas; removing a first mask from the support plate; performing a second machining process to form second recessed areas and at least one of second mesas or a first seal band area; and removing a second mask from the support plate.

公开(公告)号：US20210296099A1

公开(公告)日：2021-09-23

申请号：US17334639

申请日：2021-05-28

Applicant: Lam Research Corporation

Inventor： Alexander Matyushkin ,  Alexei Marakhtanov ,  John Patrick Holland ,  Keith Gaff ,  Felix Kozakevich

IPC: H01J37/32

Abstract: A wafer support structure in a chamber of a semiconductor manufacturing apparatus is provided. The wafer support structure includes a dielectric block having a bottom surface and a top surface supports a wafer when present. The wafer support structure includes a baseplate for supporting the dielectric block. The wafer support structure includes a first electrode embedded in an upper part of the dielectric block. The first electrode is proximate and below the top surface of the dielectric block. A top surface of the first electrode is substantially parallel to the top surface of the dielectric block. The first electrode is configured for connection to a direct current (DC) power source. The wafer support structure includes a second electrode embedded in the dielectric block. The wafer support structure includes a second electrode disposed below the first electrode and a separation distance is defined between the first electrode and the second electrode within the dielectric block. The wafer support structure includes a radio frequency (RF) gasket provides an electrical connection between the second electrode and the a baseplate.

公开(公告)号：US10804081B2

公开(公告)日：2020-10-13

申请号：US14136953

申请日：2013-12-20

Applicant: Lam Research Corporation

Inventor： Ambarish Chhatre ,  David Schaefer ,  Keith Gaff

IPC: H01J37/32 ,  H01L21/3065

Abstract: An edge ring configured to surround an outer periphery of a substrate support in a plasma processing chamber wherein plasma is generated and used to process a substrate is disclosed, the substrate support comprising a base plate, a top plate, an elastomer seal assembly between the base plate and the top plate, and an elastomer seal configured to surround the elastomer seal assembly. The edge ring includes an upper inner surface having an edge step directed towards an interior portion of the edge ring and arranged to extend from an outer periphery of a top surface of the top plate to an outer periphery of an upper surface of the base plate, a lower inner surface, an outer surface, a lower surface extending from the lower inner surface to the outer surface, and a top surface extending from the outer surface to the upper inner surface.

公开(公告)号：US10236193B2

公开(公告)日：2019-03-19

申请号：US15497992

申请日：2017-04-26

Applicant: Lam Research Corporation

Inventor： Harmeet Singh ,  Keith Gaff ,  Neil Benjamin ,  Keith Comendant

IPC: H05B1/02 ,  H01L21/67 ,  H01L21/683 ,  H01J37/32 ,  C23C4/10 ,  C23C4/134 ,  C23C14/50 ,  C23C14/54 ,  C23C14/34 ,  C23C14/10 ,  C23C16/40 ,  C23C16/458 ,  C23C16/46 ,  C23C16/509

Abstract: A substrate support is provided, is configured to support a substrate in a plasma processing chamber, and includes first, second and third insulative layers, conduits and leads. The first insulative layer includes heater zones arranged in rows and columns. The second insulative layer includes conductive vias. First ends of the conductive vias are connected respectively to the heater zones. Second ends of the conductive vias are connected respectively to power supply lines. The third insulative layer includes power return lines. The conduits extend through the second insulative layer and into the third insulative layer. The leads extend through the conduits and connect to the heater zones. The heater zones are connected to the power return lines by the leads and are configured to heat corresponding portions of the substrate to provide a predetermined temperature profile across the substrate during processing of the substrate in the plasma processing chamber.

公开(公告)号：US20160111314A1

公开(公告)日：2016-04-21

申请号：US14517095

申请日：2014-10-17

Applicant: Lam Research Corporation

Inventor： Christopher Kimball ,  Keith Gaff ,  Alexander Matyushkin ,  Zhigang Chen ,  Keith Comendant

IPC: H01L21/683 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/285 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/6833 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32724

Abstract: A substrate processing apparatus for processing substrates comprises a processing chamber in which a substrate is processed. A process gas source is adapted to supply process gas into the processing chamber. A RF energy source is adapted to energize the process gas into a plasma state in the processing chamber. A vacuum source is adapted to exhaust byproducts of the processing from the processing chamber. The processing chamber includes an electrostatic chuck assembly having a layer of ceramic material that includes an upper electrostatic clamping electrode and at least one RF electrode, a temperature controlled RF powered baseplate, and at least one annular electrically conductive gasket extending along an outer portion of an upper surface of the temperature controlled RF powered baseplate. The at least one annular electrically conductive gasket electrically couples the upper surface of the temperature controlled RF powered baseplate to the at least one RF electrode.

Abstract translation: 用于处理基板的基板处理装置包括处理基板的处理室。 处理气体源适于将处理气体供应到处理室中。 RF能量源适于将处理气体激励成处理室中的等离子体状态。 真空源适于从处理室排出处理的副产物。 处理室包括具有陶瓷材料层的静电卡盘组件，该层包括上部静电夹持电极和至少一个RF电极，温度控制的RF功率基板，以及至少一个环形导电垫片，其沿着 温控RF射频基板的上表面。 所述至少一个环形导电衬垫将所述受温度控制的RF供电底板的上表面电耦合到所述至少一个RF电极。

公开(公告)号：US11935776B2

公开(公告)日：2024-03-19

申请号：US17175315

申请日：2021-02-12

Applicant: Lam Research Corporation

Inventor： Christopher Kimball ,  Keith Gaff ,  Feng Wang

IPC: H01L21/683 ,  H01J37/00 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/6833 ,  H01J37/00 ,  H01J37/32082 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32697 ,  H01J37/32816 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67126 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/6831 ,  H01L21/68735 ,  H01L22/26 ,  H01J2237/334 ,  H01L21/68785

Abstract: A method for electrostatically clamping an edge ring in a plasma processing chamber with an electrostatic ring clamp with at least one ring backside temperature channel for providing a flow of gas to the edge ring is provided. A vacuum is provided to the at least one ring backside temperature channel Pressure in the backside temperature channel is measured. An electrostatic ring clamping voltage is provided when the pressure in the backside temperature channel reaches a threshold maximum pressure. The vacuum to the backside temperature channel is discontinued. Pressure in the backside temperature channel is measured. If pressure in the backside temperature channel rises faster than a threshold rate, then sealing failure is indicated. If pressure in the backside temperature channel does not rise faster than the threshold rate, a plasma process is continued, using the backside temperature channel to regulate a temperature of the edge ring.