公开(公告)号：US10572697B2

公开(公告)日：2020-02-25

申请号：US15946940

申请日：2018-04-06

Applicant: Lam Research Corporation

Inventor： Ye Feng ,  Marcus Musselman ,  Andrew D. Bailey, III ,  Mehmet Derya Tetiker ,  Saravanapriyan Sriraman ,  Yan Zhang ,  Julien Mailfert

IPC: G06F17/50 ,  G06F30/367 ,  G03F1/36 ,  G03F1/78 ,  G03F1/86 ,  G03F1/80

Abstract: Computer-implemented methods of optimizing a process simulation model that predicts a result of a semiconductor device fabrication operation to process parameter values characterizing the semiconductor device fabrication operation are disclosed. The methods involve generating cost values using a computationally predicted result of the semiconductor device fabrication operation and a metrology result produced, at least in part, by performing the semiconductor device fabrication operation in a reaction chamber operating under a set of fixed process parameter values. The determination of the parameters of the process simulation model may employ pre-process profiles, via optimization of the resultant post-process profiles of the parameters against profile metrology results. Cost values for, e.g., optical scatterometry, scanning electron microscopy and transmission electron microscopy may be used to guide optimization.

公开(公告)号：US20200218844A1

公开(公告)日：2020-07-09

申请号：US16741735

申请日：2020-01-13

Applicant: Lam Research Corporation

Inventor： Ye Feng ,  Marcus Musselman ,  Andrew D. Bailey, III ,  Mehmet Derya Tetiker ,  Saravanapriyan Sriraman ,  Yan Zhang ,  Julien Mailfert

IPC: G06F30/367 ,  G03F1/80 ,  G03F1/86 ,  G03F1/78 ,  G03F1/36

Abstract: Computer-implemented methods of optimizing a process simulation model that predicts a result of a semiconductor device fabrication operation to process parameter values characterizing the semiconductor device fabrication operation are disclosed. The methods involve generating cost values using a computationally predicted result of the semiconductor device fabrication operation and a metrology result produced, at least in part, by performing the semiconductor device fabrication operation in a reaction chamber operating under a set of fixed process parameter values. The determination of the parameters of the process simulation model may employ pre-process profiles, via optimization of the resultant post-process profiles of the parameters against profile metrology results. Cost values for, e.g., optical scatterometry, scanning electron microscopy and transmission electron microscopy may be used to guide optimization.

公开(公告)号：US20160370796A1

公开(公告)日：2016-12-22

申请号：US14860078

申请日：2015-09-21

Applicant: Lam Research Corporation

Inventor： Marcus Musselman ,  Juan Valdivia, III ,  Hua Xiang ,  Andrew D. Bailey, III ,  Yoko Yamaguchi ,  Qian Fu ,  Aaron Eppler

IPC: G05B19/418

Abstract: A system for controlling a condition of a wafer processing chamber is disclosed. According the principles of the present disclosure, the system includes memory and a first controller. The memory stores a plurality of profiles of respective ones of a plurality of first control elements. The plurality of first control elements are arranged throughout the chamber. The first controller determines non-uniformities in a substrate processing parameter associated with the plurality of first control elements. The substrate processing parameter is different than the condition of the chamber. The first controller adjusts at least one of the plurality of profiles based on the non-uniformities in the substrate processing parameter and a sensitivity of the substrate processing parameter to the condition.

Abstract translation: 公开了一种用于控制晶片处理室的状态的系统。 根据本公开的原理，系统包括存储器和第一控制器。 存储器存储多个第一控制元件中的各个的多个简档。 多个第一控制元件布置在整个室中。 第一控制器确定与多个第一控制元件相关联的衬底处理参数中的不均匀性。 基板处理参数不同于室的状态。 第一控制器基于衬底处理参数中的不均匀性和衬底处理参数对条件的灵敏度来调整多个轮廓中的至少一个。

公开(公告)号：US20210216695A1

公开(公告)日：2021-07-15

申请号：US17301345

申请日：2021-03-31

Applicant: Lam Research Corporation

Inventor： Ye Feng ,  Marcus Musselman ,  Andrew D. Bailey, III ,  Mehmet Derya Tetiker ,  Saravanapriyan Sriraman ,  Yan Zhang ,  Julien Mailfert

IPC: G06F30/367 ,  G03F1/36 ,  G03F1/78 ,  G03F1/86 ,  G03F1/80

Abstract: Computer-implemented methods of optimizing a process simulation model that predicts a result of a semiconductor device fabrication operation to process parameter values characterizing the semiconductor device fabrication operation are disclosed. The methods involve generating cost values using a computationally predicted result of the semiconductor device fabrication operation and a metrology result produced, at least in part, by performing the semiconductor device fabrication operation in a reaction chamber operating under a set of fixed process parameter values. The determination of the parameters of the process simulation model may employ pre-process profiles, via optimization of the resultant post-process profiles of the parameters against profile metrology results. Cost values for, e.g., optical scatterometry, scanning electron microscopy and transmission electron microscopy may be used to guide optimization.

公开(公告)号：US11029668B2

公开(公告)日：2021-06-08

申请号：US16506386

申请日：2019-07-09

Applicant: LAM RESEARCH CORPORATION

Inventor： Marcus Musselman ,  Andrew D. Bailey, III

IPC: G05B19/418 ,  G01K15/00 ,  G01K3/06

Abstract: A system includes sensors, an interface and a controller. The interface receives feedback signals from the sensors. At least some of the sensors are disposed in an electrostatic chuck. The feedback signals are indicative respectively of fields of a heating plate of the electrostatic chuck. The controller, based on the fields and sets of calibration values, estimates values of a first field respectively for multiple points on a substrate. Each of the sets of calibration values corresponds respectively to one of multiple actuators. The calibration values, in each of the sets of calibration values, define amounts of contribution provided by a respective one of the actuators to the first field for the points. The controller changes physical states of the actuators based on the estimated values of the first field of the points to provide a predetermined temperature distribution profile across the electrostatic chuck.

公开(公告)号：US20170287753A1

公开(公告)日：2017-10-05

申请号：US15446543

申请日：2017-03-01

Applicant: LAM RESEARCH CORPORATION

Inventor： Marcus Musselman ,  Andrew D. Bailey, III ,  Dmitry Opaits

IPC: H01L21/67 ,  G01B11/27 ,  H01L21/687

CPC classification number: H01L21/67259 ,  H01L21/681 ,  H01L21/68735 ,  H01L21/68742

Abstract: A substrate support in a substrate processing system includes an inner portion arranged to support a substrate, an edge ring surrounding the inner portion, and a controller. The controller, to selectively cause the edge ring to engage the substrate and tilt the substrate, controls at least one actuator to at least one of raise and lower the edge ring and raise and lower the inner portion of the substrate support. The controller determines an alignment of a measurement device in the substrate processing system based on a signal reflected from a surface of the substrate when the substrate is tilted.

公开(公告)号：US20170287682A1

公开(公告)日：2017-10-05

申请号：US15403786

申请日：2017-01-11

Applicant: LAM RESEARCH CORPORATION

Inventor： Marcus Musselman ,  Andrew D. Bailey, III ,  Jon McChesney

IPC: H01J37/32 ,  H01L21/673

Abstract: A substrate support in a substrate processing system includes an inner portion arranged to support a substrate, an edge ring surrounding the inner portion, and a controller. The controller at least one of lowers the edge ring to selectively cause the edge ring to engage the substrate and raises the inner portion to selectively cause the edge ring to engage the substrate. The controller determines when the edge ring engages the substrate and calculates at least one characteristic of the substrate processing system based on the determination of when the edge ring engages the substrate.

公开(公告)号：US11056405B2

公开(公告)日：2021-07-06

申请号：US16131464

申请日：2018-09-14

Applicant: Lam Research Corporation

Inventor： Marcus Musselman

IPC: H01L21/66 ,  H01L21/67 ,  H01J37/32 ,  G06N20/00

Abstract: A method for controlling a semiconductor fabrication process includes determining a representative feature within a given area on a wafer. The representative feature has a critical dimension (CD) response to a specified process control parameter that is correlated to a CD response to the specified process control parameter of other features within the given area on the wafer. A CD adjustment is determined for the representative feature to achieve a target CD for the representative feature. The CD response to the specified process control parameter for the representative feature and the CD adjustment for the representative feature are used to determine an adjustment to the specified process control parameter that will drive a CD of the representative feature to the target critical dimension for the representative feature. A process controller is updated to implement the adjustment to the specified process control parameter during subsequent processing of another wafer.

公开(公告)号：US20200091017A1

公开(公告)日：2020-03-19

申请号：US16131464

申请日：2018-09-14

Applicant: Lam Research Corporation

Inventor： Marcus Musselman

IPC: H01L21/66 ,  H01L21/67 ,  H01J37/32

Abstract: A method for controlling a semiconductor fabrication process includes determining a representative feature within a given area on a wafer. The representative feature has a critical dimension (CD) response to a specified process control parameter that is correlated to a CD response to the specified process control parameter of other features within the given area on the wafer. A CD adjustment is determined for the representative feature to achieve a target CD for the representative feature. The CD response to the specified process control parameter for the representative feature and the CD adjustment for the representative feature are used to determine an adjustment to the specified process control parameter that will drive a CD of the representative feature to the target critical dimension for the representative feature. A process controller is updated to implement the adjustment to the specified process control parameter during subsequent processing of another wafer.

公开(公告)号：US20190311083A1

公开(公告)日：2019-10-10

申请号：US15946940

申请日：2018-04-06

Applicant: Lam Research Corporation

Inventor： Ye Feng ,  Marcus Musselman ,  Andrew D. Bailey, III ,  Mehmet Derya Tetiker ,  Saravanapriyan Sriraman ,  Yan Zhang ,  Julien Mailfert

IPC: G06F17/50 ,  G03F1/36 ,  G03F1/80 ,  G03F1/86 ,  G03F1/78

Abstract: Computer-implemented methods of optimizing a process simulation model that predicts a result of a semiconductor device fabrication operation to process parameter values characterizing the semiconductor device fabrication operation are disclosed. The methods involve generating cost values using a computationally predicted result of the semiconductor device fabrication operation and a metrology result produced, at least in part, by performing the semiconductor device fabrication operation in a reaction chamber operating under a set of fixed process parameter values. The determination of the parameters of the process simulation model may employ pre-process profiles, via optimization of the resultant post-process profiles of the parameters against profile metrology results. Cost values for, e.g., optical scatterometry, scanning electron microscopy and transmission electron microscopy may be used to guide optimization.