公开(公告)号：US12249490B2

公开(公告)日：2025-03-11

申请号：US17770147

申请日：2020-10-21

Applicant: LAM RESEARCH CORPORATION

Inventor： Lin Xu ,  Douglas Detert ,  John Daugherty ,  Pankaj Hazarika ,  Satish Srinivasan ,  Nash W. Anderson ,  John Michael Kerns ,  Robin Koshy ,  David Joseph Wetzel ,  Lei Liu ,  Eric A. Pape

IPC: H01J37/32

Abstract: A component of a plasma processing chamber having at least one plasma facing surface of the component comprises single crystal metal oxide material. The component can be machined from a single crystal metal oxide ingot. Suitable single crystal metal oxides include spinel, yttrium oxide, and yttrium aluminum garnet (YAG). A single crystal metal oxide can be machined to form a gas injector of a plasma processing chamber.

公开(公告)号：US20240023204A1

公开(公告)日：2024-01-18

申请号：US18246849

申请日：2021-09-28

Applicant: Lam Research Corporation

Inventor： Joel Hollingsworth ,  Ramkishan Rao Lingampalli ,  Pankaj Hazarika

IPC: H05B3/28 ,  C04B35/64

CPC classification number: H05B3/283 ,  C04B35/64 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/386 ,  H05B2203/017

Abstract: Various embodiments herein relate to techniques for fabricating a platen for use in a semiconductor processing apparatus, as well as the platens and intermediate structures produced by such techniques. For example, such techniques may include depositing a coating on a heater to form a coated heater, where the heater includes a metal wire on which the coating is formed; placing the coated heater in powder; consolidating the powder into a cohesive mass to form a powder-based composite; and sintering the powder-based composite to form the platen, where the platen includes the heater embedded in sintered ceramic material. The coating on the heater may act to protect the heater from chemical attack from carbon- and/or oxygen-containing compounds that may be present during sintering. The platen may be part of a pedestal that, once fabricated, may be installed in a semiconductor processing apparatus.