公开(公告)号：US10967407B2

公开(公告)日：2021-04-06

申请号：US15969626

申请日：2018-05-02

Applicant: Lam Research Corporation

Inventor： Amir A. Yasseri ,  Hong Shih ,  John Daugherty ,  Duane Outka ,  Lin Xu ,  Armen Avoyan ,  Cliff La Croix ,  Girish Hundi

IPC: B08B7/00 ,  B08B7/04 ,  B08B5/02 ,  B08B3/04 ,  B08B3/14 ,  B08B3/12 ,  H01J37/32

Abstract: An apparatus for conditioning a component of a processing chamber is provided. A tank for holding a megasonic conditioning solution is provided. A mount holds the component immersed in a megasonic conditioning solution, when the tank is filled with the megasonic conditioning solution. A megasonic conditioning solution inlet system delivers the megasonic conditioning solution to the tank. A megasonic transducer head comprises at least one megasonic transducer to provide megasonic energy to the megasonic conditioning solution, wherein the megasonic energy is delivered to the component via the megasonic conditioning solution. A megasonic conditioning solution drain system drains the megasonic conditioning solution from the tank at a location above where the component is held in the megasonic conditioning solution. An actuator moves the megasonic transducer head across the tank.

公开(公告)号：US20180082826A1

公开(公告)日：2018-03-22

申请号：US15268472

申请日：2016-09-16

Applicant: Lam Research Corporation

Inventor： Joydeep Guha ,  John Daugherty ,  Vahid Vahedi ,  Richard Alan Gottscho

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01J37/32935 ,  B81C2201/0138 ,  H01J37/32082 ,  H01J37/32926 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67242 ,  H01L21/67248 ,  H01L21/67253

Abstract: Methods and systems for controlling processing state of a plasma reactor to initiate processing of production substrates and/or to determine a ready state of a reactor after the reactor has been cleaned and needs to be seasoned for subsequent production wafer processing are provided. The method initiate processing of a substrate in the plasma reactor using settings for tuning knobs of the plasma reactor that are approximated to achieve desired processing state values. A plurality of data streams are received from the plasma reactor during the processing of the substrate. The plurality of data streams are used to identify current processing state values. The method includes generating a compensation vector that identifies differences between the current processing state values and the desired processing state values. The generation of the compensation vector uses machine learning to improve and refile the identification and amount of compensation needed, as identified in the compensation vector. The method further includes transforming the compensation vector into adjustments to the settings for the tuning knobs and then applying the adjustment to the tuning knobs of the plasma reactor.

公开(公告)号：US20170110350A1

公开(公告)日：2017-04-20

申请号：US15296547

申请日：2016-10-18

Applicant: Lam Research Corporation

Inventor： David Trussell ,  John Daugherty ,  Michael Kellogg ,  Christopher Pena ,  Richard Gould ,  Klay Kunkel

IPC: H01L21/67 ,  H01L21/677

CPC classification number: H01L21/67173 ,  H01L21/67155 ,  H01L21/67167 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/67201 ,  H01L21/67706 ,  H01L21/67727 ,  H01L21/67733 ,  H01L21/67745

Abstract: A system for processing substrates is provided, comprising: a wafer transport assembly that is configured to transport wafers to and from one or more process modules, the wafer transport assembly having at least one wafer transport module, wherein lateral sides of the at least one wafer transport module are configured to couple to the one or more process modules; a service floor defined below the wafer transport assembly, the service floor being defined at a height that is less than a height of a fabrication facility floor in which the system is disposed.

公开(公告)号：US09337002B2

公开(公告)日：2016-05-10

申请号：US13796751

申请日：2013-03-12

Applicant: Lam Research Corporation

Inventor： John Daugherty ,  Hong Shih ,  Lin Xu ,  Anthony Amadio ,  Robert G. O'Neill ,  Peter Holland ,  Sivakami Ramanathan ,  Tae Won Kim ,  Duane Outka ,  John Michael Kerns ,  Sonia Castillo

IPC: C22C21/00 ,  C23C24/04 ,  B32B15/01 ,  H01J37/32 ,  C22C21/08 ,  C23C28/00 ,  H01J37/00

CPC classification number: H01J37/32477 ,  C22C21/00 ,  C22C21/08 ,  C23C24/04 ,  C23C28/322 ,  C23C28/345 ,  H01J37/32495 ,  H01J37/32559 ,  Y10T428/12764 ,  Y10T428/218 ,  Y10T428/24355 ,  Y10T428/2495 ,  Y10T428/24967 ,  Y10T428/26 ,  Y10T428/31678

Abstract: Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener. Methods of making the components and methods of plasma processing using the components are also disclosed.

Abstract translation: 公开了半导体材料处理室的部件，其可以包括基板和在其表面上形成的至少一个耐腐蚀涂层。 至少一种耐腐蚀涂层是通过冷喷涂技术形成的高纯金属涂层。 阳极氧化层可以在高纯金属涂层上形成。 阳极氧化层包括组分的工艺暴露表面。 还公开了包括一个或多个组件的半导体材料处理设备，所述组件选自室衬垫，静电吸盘，聚焦环，室壁，边缘环，等离子体限制环， 基板支撑件，挡板，气体分配板，气体分配环，气体喷嘴，加热元件，等离子体屏幕，输送机构，气体供应系统，升降机构，装载锁定器，门机构 机械臂和紧固件。 还公开了使用这些部件制造等离子体处理的部件和方法的方法。

公开(公告)号：US20150235889A1

公开(公告)日：2015-08-20

申请号：US14704602

申请日：2015-05-05

Applicant: Lam Research Corporation

Inventor： Hong Shih ,  Tuochuan Huang ,  David Schaefer ,  Ambarish Chhatre ,  John Daugherty ,  MingHang Wu ,  Clifford La Croix

IPC: H01L21/683

CPC classification number: H01L21/6833 ,  B05D5/12 ,  B05D7/52 ,  C23C8/02 ,  C23C22/66 ,  H01L21/6831 ,  Y10T279/23

Abstract: A method is provided for treating a bipolar ESC having a front surface and a back surface, the front surface including an anodized layer. The method includes eliminating the anodized layer, disposing a new anodized layer onto the front surface, and treating the new anodized layer with water to seal the new anodized layer.

Abstract translation: 提供了一种用于处理具有前表面和后表面的双极ESC的方法，前表面包括阳极氧化层。 该方法包括消除阳极氧化层，将新的阳极氧化层设置在前表面上，以及用水处理新的阳极氧化层以密封新的阳极氧化层。

公开(公告)号：US20140295670A1

公开(公告)日：2014-10-02

申请号：US13851605

申请日：2013-03-27

Applicant: LAM RESEARCH CORPORATION

Inventor： Hong Shih ,  Lin Xu ,  John Michael Kerns ,  William Charles ,  John Daugherty ,  Sivakami Ramanathan ,  Russell Ormond ,  Robert G. O'Neill ,  Tom Stevenson

IPC: H01L21/3065 ,  H01L21/02 ,  C25D11/02 ,  H01L21/67

CPC classification number: C25D11/026 ,  C23C16/4404 ,  C23C24/00 ,  C23C28/322 ,  C23C28/345 ,  C25D11/04 ,  C25D11/12 ,  C25D11/16 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/78 ,  Y10T428/12479 ,  Y10T428/12549 ,  Y10T428/1259

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract translation: 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。

公开(公告)号：US20140150819A1

公开(公告)日：2014-06-05

申请号：US14041385

申请日：2013-09-30

Applicant: Lam Research Corporation

Inventor： Hong Shih ,  Fan-Cheung Sze ,  Brian McMillin ,  John Daugherty ,  Yan Fang ,  Duane Outka ,  Tuochuan Huang ,  Sivakami Ramanathan

IPC: H01L21/67

CPC classification number: B08B7/04 ,  B08B7/0021 ,  B08B7/028 ,  B24C1/003 ,  H01L21/67051

Abstract: A method of wet cleaning an aluminum part having bare aluminum surfaces and anodized aluminum surfaces. The method includes CO2 dry ice blasting the surfaces of the aluminum part at approximately 35 to approximately 45 psi, masking the aluminum part to conceal the bare aluminum surfaces, soaking the dry ice blasted and masked aluminum part in deionized water at or above approximately 60° C., scrubbing the aluminum part with an abrasive pad and deionized water after completion of the soaking in deionized water, and repeating the soaking and scrubbing in the recited order at least three additional times.

Abstract translation: 一种湿式清洁铝部件的方法，该部件具有裸铝表面和阳极氧化铝表面。 该方法包括将铝部件的表面以约35至约45psi的二氧化碳干冰喷砂，掩蔽铝部分以隐藏裸铝表面，将干冰喷砂和掩蔽的铝部分浸入等于或高于约60°的去离子水 C.在完成在去离子水中浸泡之后用研磨垫和去离子水洗涤铝部分，并按照所述顺序重复浸泡和洗涤至少三次。

公开(公告)号：US12198902B2

公开(公告)日：2025-01-14

申请号：US17432003

申请日：2020-03-03

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  John Daugherty ,  Satish Srinivasan ,  David Joseph Wetzel

IPC: B32B15/04 ,  B32B17/06 ,  H01J37/32 ,  C23C24/04 ,  H01L21/687

Abstract: An apparatus adapted for use in a plasma processing chamber is provided. An aluminum body with at least one surface is provided. An aluminum oxide containing aerosol deposition coating is disposed over the at least one surface of the aluminum body. An yttrium containing aerosol deposition coating is disposed over the aluminum oxide containing aerosol deposition coating.

公开(公告)号：US12064795B2

公开(公告)日：2024-08-20

申请号：US17211518

申请日：2021-03-24

Applicant: Lam Research Corporation

Inventor： Amir A. Yasseri ,  Hong Shih ,  John Daugherty ,  Duane Outka ,  Lin Xu ,  Armen Avoyan ,  Cliff La Croix ,  Girish Hundi

IPC: B08B7/04 ,  B08B3/04 ,  B08B3/12 ,  B08B3/14 ,  B08B5/02 ,  H01J37/32

CPC classification number: B08B7/04 ,  B08B3/048 ,  B08B3/12 ,  B08B3/14 ,  B08B5/02 ,  H01J37/32853

Abstract: A method for conditioning a component of a wafer processing chamber is provided. The component is placed in an ultrasonic conditioning solution in an ultrasonic solution tank. Ultrasonic energy is applied through the ultrasonic conditioning solution to the component to clean the component. The component is submerged in a megasonic conditioning solution in a tank. Megasonic energy is applied through the megasonic conditioning solution to the component to clean the component.

公开(公告)号：US10964514B2

公开(公告)日：2021-03-30

申请号：US15785983

申请日：2017-10-17

Applicant: Lam Research Corporation

Inventor： Evan Edward Patton ,  John Daugherty

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/443 ,  H05H1/46

Abstract: An electrode for transmitting radiofrequency power to a plasma processing region includes a plate formed of semiconducting material and a high electrical conductivity layer formed on a top surface of the plate and integral with the plate. The high electrical conductivity layer has a lower electrical resistance than the semiconducting material of the plate. The electrode includes a distribution of through-holes. Each through-hole extends through an entire thickness of the electrode from a top surface of the high electrical conductivity layer to a bottom surface of the plate. In some embodiments, the plate can be formed of a silicon material and the high electrical conductivity layer can be a silicide material formed from the silicon material of the plate.