公开(公告)号：US12198902B2

公开(公告)日：2025-01-14

申请号：US17432003

申请日：2020-03-03

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  John Daugherty ,  Satish Srinivasan ,  David Joseph Wetzel

IPC: B32B15/04 ,  B32B17/06 ,  H01J37/32 ,  C23C24/04 ,  H01L21/687

Abstract: An apparatus adapted for use in a plasma processing chamber is provided. An aluminum body with at least one surface is provided. An aluminum oxide containing aerosol deposition coating is disposed over the at least one surface of the aluminum body. An yttrium containing aerosol deposition coating is disposed over the aluminum oxide containing aerosol deposition coating.

公开(公告)号：US12249490B2

公开(公告)日：2025-03-11

申请号：US17770147

申请日：2020-10-21

Applicant: LAM RESEARCH CORPORATION

Inventor： Lin Xu ,  Douglas Detert ,  John Daugherty ,  Pankaj Hazarika ,  Satish Srinivasan ,  Nash W. Anderson ,  John Michael Kerns ,  Robin Koshy ,  David Joseph Wetzel ,  Lei Liu ,  Eric A. Pape

IPC: H01J37/32

Abstract: A component of a plasma processing chamber having at least one plasma facing surface of the component comprises single crystal metal oxide material. The component can be machined from a single crystal metal oxide ingot. Suitable single crystal metal oxides include spinel, yttrium oxide, and yttrium aluminum garnet (YAG). A single crystal metal oxide can be machined to form a gas injector of a plasma processing chamber.

公开(公告)号：US12129569B2

公开(公告)日：2024-10-29

申请号：US17795509

申请日：2021-02-16

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  David Joseph Wetzel ,  John Daugherty ,  Hong Shih ,  Satish Srinivasan ,  Yuanping Song ,  Johnny Pham ,  Yiwei Song ,  Christopher Kimball

IPC: C25D7/04 ,  C25D3/44 ,  C25D5/48 ,  C25D11/08 ,  H01J37/32 ,  H01L21/683

CPC classification number: C25D7/04 ,  C25D3/44 ,  C25D5/48 ,  C25D11/08 ,  H01J37/32642 ,  H01J37/32715 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/334 ,  Y10T428/12542 ,  Y10T428/12576 ,  Y10T428/12583 ,  Y10T428/12667 ,  Y10T428/12806

Abstract: A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10−6/K. A metal oxide layer is then disposed over a surface of the component body.

公开(公告)号：US11087961B2

公开(公告)日：2021-08-10

申请号：US15910739

申请日：2018-03-02

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  Robin Koshy ,  John E. Daugherty ,  Satish Srinivasan ,  David Wetzel

IPC: H01J37/32 ,  C23C16/40 ,  C23C16/56 ,  C23C16/455

Abstract: A quartz structure includes a protective layer comprising yttrium oxide. The quartz structure may be fabricated by: (a) receiving a quartz structure; and (b) coating the quartz structure with a protective layer comprising yttrium oxide to form a part to be used in the plasma reactor. The part has a size and shape adapted for forming a window or injector in a plasma reactor. The protective layer does not substantially change the size or shape of the quartz structure. The part may be installed in the plasma reactor at a location where, during operation, a plasma will contact or be proximate to the part.

公开(公告)号：US20210343510A1

公开(公告)日：2021-11-04

申请号：US17305883

申请日：2021-07-16

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  Robin Koshy ,  John E. Daugherty ,  Satish Srinivasan ,  David Wetzel

IPC: H01J37/32 ,  C23C16/40 ,  C23C16/56 ,  C23C16/455

Abstract: A quartz structure includes a protective layer comprising yttrium oxide. The quartz structure may be fabricated by: (a) receiving a quartz structure; and (b) coating the quartz structure with a protective layer comprising yttrium oxide to form a part to be used in the plasma reactor. The part has a size and shape adapted for forming a window or injector in a plasma reactor. The protective layer does not substantially change the size or shape of the quartz structure. The part may be installed in the plasma reactor at a location where, during operation, a plasma will contact or be proximate to the part.

公开(公告)号：US20190272981A1

公开(公告)日：2019-09-05

申请号：US15910739

申请日：2018-03-02

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  Robin Koshy ,  John E. Daugherty ,  Satish Srinivasan ,  David Wetzel

IPC: H01J37/32 ,  C23C16/40 ,  C23C16/56 ,  C23C16/455

Abstract: A quartz structure includes a protective layer comprising yttrium oxide. The quartz structure may be fabricated by: (a) receiving a quartz structure; and (b) coating the quartz structure with a protective layer comprising yttrium oxide to form a part to be used in the plasma reactor. The part has a size and shape adapted for forming a window or injector in a plasma reactor. The protective layer does not substantially change the size or shape of the quartz structure. The part may be installed in the plasma reactor at a location where, during operation, a plasma will contact or be proximate to the part.

公开(公告)号：US09947558B2

公开(公告)日：2018-04-17

申请号：US15235660

申请日：2016-08-12

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  Hong Shih ,  Robin Koshy ,  John Daugherty ,  Satish Srinivasan

IPC: H01L21/31 ,  H01L21/67 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/67069 ,  H01L21/02123 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32137 ,  H01L21/67086 ,  H01L21/6831

Abstract: A method for conditioning and cleaning a silicon part is provided. The silicon part is heated to a temperature of at least 300° C. in the presence of oxygen to form an outer surface of the silicon part into silicon oxide. The silicon part is placed in a wet bath wherein the bath is a solution that selectively etches silicon oxide with respect to silicon.