公开(公告)号：US20140272459A1

公开(公告)日：2014-09-18

申请号：US13796751

申请日：2013-03-12

Applicant: LAM RESEARCH CORPORATION

Inventor： John Daugherty ,  Hong Shih ,  Lin Xu ,  Anthony Amadio ,  Robert G. O'Neill ,  Peter Holland ,  Sivakami Ramanathan ,  Tae Won Kim ,  Duane Outka ,  John Michael Kerns ,  Sonia Castillo

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/02 ,  C22C21/00 ,  C23C4/12

CPC classification number: H01J37/32477 ,  C22C21/00 ,  C22C21/08 ,  C23C24/04 ,  C23C28/322 ,  C23C28/345 ,  H01J37/32495 ,  H01J37/32559 ,  Y10T428/12764 ,  Y10T428/218 ,  Y10T428/24355 ,  Y10T428/2495 ,  Y10T428/24967 ,  Y10T428/26 ,  Y10T428/31678

Abstract: Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener. Methods of making the components and methods of plasma processing using the components are also disclosed.

Abstract translation: 公开了半导体材料处理室的部件，其可以包括基板和在其表面上形成的至少一个耐腐蚀涂层。 至少一种耐腐蚀涂层是通过冷喷涂技术形成的高纯金属涂层。 阳极氧化层可以在高纯金属涂层上形成。 阳极氧化层包括组分的工艺暴露表面。 还公开了包括一个或多个组件的半导体材料处理设备，所述组件选自室衬垫，静电吸盘，聚焦环，室壁，边缘环，等离子体限制环， 基板支撑件，挡板，气体分配板，气体分配环，气体喷嘴，加热元件，等离子体屏幕，输送机构，气体供应系统，升降机构，装载锁定器，门机构 机械臂和紧固件。 还公开了使用这些部件制造等离子体处理的部件和方法的方法。

公开(公告)号：US09873940B2

公开(公告)日：2018-01-23

申请号：US14572087

申请日：2014-12-16

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  Hong Shih ,  Nash Anderson ,  Tom Stevenson ,  John Daugherty ,  John Michael Kerns ,  Robert Griffith O'Neill

IPC: C23C16/455 ,  C23C14/56 ,  C23C16/04 ,  C23C16/44

CPC classification number: C23C14/564 ,  C23C16/045 ,  C23C16/4402 ,  C23C16/4404 ,  C23C16/45525 ,  Y10T29/41 ,  Y10T428/263 ,  Y10T428/31504 ,  Y10T428/31551 ,  Y10T428/31678 ,  Y10T428/31721 ,  Y10T428/31725 ,  Y10T428/31786

Abstract: A coating system for forming an atomic layer deposition (ALD) or a molecular layer deposition (MLD) barrier coating on interior fluid wetted surfaces of a fluid handling component for a vacuum chamber of a semiconductor substrate processing apparatus. The coating system includes the fluid handling component, wherein the interior fluid wetted surfaces define a process region of the coating system, a gas supply system in fluid communication with the process region of the component wherein the gas supply system supplies process gases to the process region of the component through the inlet port thereof such that an ALD or MLD barrier coating can be formed on the fluid wetted surfaces of the fluid handling component, and an exhaust system in fluid communication with the process region of the component wherein the exhaust system exhausts the process gases from the process region of the component through the outlet port thereof.

公开(公告)号：US09123651B2

公开(公告)日：2015-09-01

申请号：US13851605

申请日：2013-03-27

Applicant: Lam Research Corporation

Inventor： Hong Shih ,  Lin Xu ,  John Michael Kerns ,  William Charles ,  John Daugherty ,  Sivakami Ramanathan ,  Russell Ormond ,  Robert G. O'Neill ,  Tom Stevenson

IPC: H01L21/3065 ,  H01L21/02 ,  C25D11/02 ,  C23C16/44

CPC classification number: C25D11/026 ,  C23C16/4404 ,  C23C24/00 ,  C23C28/322 ,  C23C28/345 ,  C25D11/04 ,  C25D11/12 ,  C25D11/16 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/78 ,  Y10T428/12479 ,  Y10T428/12549 ,  Y10T428/1259

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract translation: 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。

公开(公告)号：US12270748B2

公开(公告)日：2025-04-08

申请号：US17273264

申请日：2019-09-05

Applicant: LAM RESEARCH CORPORATION

Inventor： Amir A. Yasseri ,  Girish M. Hundi ,  John Michael Kerns ,  Duane Outka ,  John Daugherty ,  Cliff La Croix

IPC: G01N15/1434 ,  G01N1/22 ,  G01N15/14

Abstract: An apparatus for measuring contamination on a critical surface of a part is provided. A vessel for mounting the part is provided. An inert gas source is in fluid connection with the vessel and adapted to provide an inert gas to the vessel. At least one diffuser receives the inert gas from the vessel, wherein the critical surface of the part is exposed to the inert gas when the part is mounted in the vessel. At least one analyzer is adapted to receive inert gas from the at least one diffuser and measures contaminants in the inert gas.

公开(公告)号：US20150187615A1

公开(公告)日：2015-07-02

申请号：US14578979

申请日：2014-12-22

Applicant: Lam Research Corporation

Inventor： John Daugherty ,  Hong Shih ,  Anthony Amadio ,  Tom Stevenson ,  Lin Xu ,  John Michael Kerns ,  Robert Griffith O'Neill ,  Sonia Castillo

IPC: H01L21/67 ,  H01L21/02 ,  C25D11/02 ,  H01L21/3065 ,  C23C24/04 ,  C23C22/73

CPC classification number: H01L21/02274 ,  C23C16/4404 ,  C23C16/50 ,  C23C24/04 ,  C25D11/04 ,  C25D11/38 ,  H01J37/321 ,  H01J37/32669

Abstract: A semiconductor plasma processing apparatus used to process semiconductor components comprises a plasma processing chamber, a process gas source in fluid communication with the plasma processing chamber for supplying a process gas into the plasma processing chamber, a RF energy source adapted to energize the process gas into the plasma state in the plasma processing chamber, and a vacuum port for exhausting process gas from the plasma processing chamber. The semiconductor plasma processing apparatus further comprises at least one component wherein the component has a body which has a relative magnetic permeability of about 70,000 or greater and a cold sprayed electrically conductive and nonmagnetic coating on a surface of the body wherein the coating has a thickness greater than the skin depth of a RF current configured to flow therethrough during plasma processing.

Abstract translation: 用于处理半导体部件的半导体等离子体处理装置包括等离子体处理室，与等离子体处理室流体连通的处理气体源，用于将处理气体供应到等离子体处理室中; RF能量源，其适于将工艺气体激励成 等离子体处理室中的等离子体状态，以及用于从等离子体处理室排出处理气体的真空端口。 半导体等离子体处理装置还包括至少一种组分，其中组分具有约70,000或更大的相对磁导率的本体和在体表面上的冷喷涂的导电和非磁性涂层，其中涂层具有更大的厚度 比在等离子体处理期间配置为流过其中的RF电流的趋肤深度。

公开(公告)号：US20170040147A1

公开(公告)日：2017-02-09

申请号：US15232214

申请日：2016-08-09

Applicant: Lam Research Corporation

Inventor： Hong Shih ,  John Michael Kerns ,  Yan Fang ,  Allan Ronne

IPC: H01J37/32 ,  B23K31/02 ,  C23C22/50 ,  C23C30/00 ,  C25F3/24

CPC classification number: H01J37/32495 ,  B23K31/02 ,  B23K2101/35 ,  B23K2103/05 ,  C23C22/50 ,  C23C30/00 ,  C25F3/24 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/67069

Abstract: In one embodiment, a plasma etching system may include a process gas source, a plasma processing chamber, and a gas supply conduit. A plasma can be formed from a process gas recipe in the plasma processing chamber. The gas supply conduit may include a corrosion resistant layered structure forming an inner recipe contacting surface and an outer environment contacting surface. The corrosion resistant layered structure may include a protective silicon layer, a passivated coupling layer and a stainless steel layer. The inner recipe contacting surface can be formed by the protective silicon layer. The passivated coupling layer can be disposed between the protective silicon layer and the stainless steel layer. The passivated coupling layer can include chrome oxide and iron oxide. The chrome oxide can be more abundant in the passivated coupling layer than the iron oxide.

Abstract translation: 在一个实施例中，等离子体蚀刻系统可以包括处理气体源，等离子体处理室和气体供应导管。 等离子体可以由等离子体处理室中的处理气体配方形成。 气体供应管道可以包括形成内部配方接触表面和外部环境接触表面的耐腐蚀层状结构。 耐腐蚀层状结构可以包括保护硅层，钝化耦合层和不锈钢层。 内部配方接触表面可以由保护性硅层形成。 钝化的耦合层可以设置在保护硅层和不锈钢层之间。 钝化的偶联层可包括氧化铬和氧化铁。 钝化偶联层中的氧化铬可以比氧化铁更丰富。

公开(公告)号：US09337002B2

公开(公告)日：2016-05-10

申请号：US13796751

申请日：2013-03-12

Applicant: Lam Research Corporation

Inventor： John Daugherty ,  Hong Shih ,  Lin Xu ,  Anthony Amadio ,  Robert G. O'Neill ,  Peter Holland ,  Sivakami Ramanathan ,  Tae Won Kim ,  Duane Outka ,  John Michael Kerns ,  Sonia Castillo

IPC: C22C21/00 ,  C23C24/04 ,  B32B15/01 ,  H01J37/32 ,  C22C21/08 ,  C23C28/00 ,  H01J37/00

CPC classification number: H01J37/32477 ,  C22C21/00 ,  C22C21/08 ,  C23C24/04 ,  C23C28/322 ,  C23C28/345 ,  H01J37/32495 ,  H01J37/32559 ,  Y10T428/12764 ,  Y10T428/218 ,  Y10T428/24355 ,  Y10T428/2495 ,  Y10T428/24967 ,  Y10T428/26 ,  Y10T428/31678

Abstract: Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener. Methods of making the components and methods of plasma processing using the components are also disclosed.

Abstract translation: 公开了半导体材料处理室的部件，其可以包括基板和在其表面上形成的至少一个耐腐蚀涂层。 至少一种耐腐蚀涂层是通过冷喷涂技术形成的高纯金属涂层。 阳极氧化层可以在高纯金属涂层上形成。 阳极氧化层包括组分的工艺暴露表面。 还公开了包括一个或多个组件的半导体材料处理设备，所述组件选自室衬垫，静电吸盘，聚焦环，室壁，边缘环，等离子体限制环， 基板支撑件，挡板，气体分配板，气体分配环，气体喷嘴，加热元件，等离子体屏幕，输送机构，气体供应系统，升降机构，装载锁定器，门机构 机械臂和紧固件。 还公开了使用这些部件制造等离子体处理的部件和方法的方法。

公开(公告)号：US20140295670A1

公开(公告)日：2014-10-02

申请号：US13851605

申请日：2013-03-27

Applicant: LAM RESEARCH CORPORATION

Inventor： Hong Shih ,  Lin Xu ,  John Michael Kerns ,  William Charles ,  John Daugherty ,  Sivakami Ramanathan ,  Russell Ormond ,  Robert G. O'Neill ,  Tom Stevenson

IPC: H01L21/3065 ,  H01L21/02 ,  C25D11/02 ,  H01L21/67

CPC classification number: C25D11/026 ,  C23C16/4404 ,  C23C24/00 ,  C23C28/322 ,  C23C28/345 ,  C25D11/04 ,  C25D11/12 ,  C25D11/16 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/78 ,  Y10T428/12479 ,  Y10T428/12549 ,  Y10T428/1259

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract translation: 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。

公开(公告)号：US12249490B2

公开(公告)日：2025-03-11

申请号：US17770147

申请日：2020-10-21

Applicant: LAM RESEARCH CORPORATION

Inventor： Lin Xu ,  Douglas Detert ,  John Daugherty ,  Pankaj Hazarika ,  Satish Srinivasan ,  Nash W. Anderson ,  John Michael Kerns ,  Robin Koshy ,  David Joseph Wetzel ,  Lei Liu ,  Eric A. Pape

IPC: H01J37/32

Abstract: A component of a plasma processing chamber having at least one plasma facing surface of the component comprises single crystal metal oxide material. The component can be machined from a single crystal metal oxide ingot. Suitable single crystal metal oxides include spinel, yttrium oxide, and yttrium aluminum garnet (YAG). A single crystal metal oxide can be machined to form a gas injector of a plasma processing chamber.

公开(公告)号：US09546432B2

公开(公告)日：2017-01-17

申请号：US14817742

申请日：2015-08-04

Applicant: LAM RESEARCH CORPORATION

Inventor： Hong Shih ,  Lin Xu ,  John Michael Kerns ,  William Charles ,  John Daugherty ,  Sivakami Ramanathan ,  Russell Ormond ,  Robert G. O'Neill ,  Tom Stevenson

IPC: C25D11/04 ,  C25D11/02 ,  H01L21/3065 ,  H01L21/02 ,  C25D11/16 ,  C25D11/12 ,  C23C28/00 ,  C23C24/00 ,  H01L21/67 ,  C23C16/44 ,  H01L21/78

CPC classification number: C25D11/026 ,  C23C16/4404 ,  C23C24/00 ,  C23C28/322 ,  C23C28/345 ,  C25D11/04 ,  C25D11/12 ,  C25D11/16 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/78 ,  Y10T428/12479 ,  Y10T428/12549 ,  Y10T428/1259

Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.

Abstract translation: 在半导体加工设备的铝部件上形成致密氧化物涂层的方法包括在铝部件的表面上冷却一层纯铝至预定厚度。 然后使用等离子体电解氧化工艺在纯铝层上形成致密的氧化物涂层，其中等离子体电解氧化工艺使纯铝层发生微量放电，从而在纯铝层上形成致密的氧化物涂层 铝部件的表面。