公开(公告)号：US20160258057A1

公开(公告)日：2016-09-08

申请号：US14641179

申请日：2015-03-06

Applicant: Lam Research Corporation

Inventor： James Lee ,  George Andrew Antonelli ,  Kevin M. McLaughlin ,  Andrew John McKerrow ,  Curtis Bailey ,  Alexander R. Fox ,  Stephen Lau ,  Eugene Smargiassi ,  Casey Holder ,  Troy Daniel Ribaudo ,  Xiaolan Chen

IPC: C23C16/44 ,  C23C16/52 ,  C23C16/48 ,  H01L21/67

CPC classification number: C23C16/488 ,  B08B7/0057 ,  B08B9/00 ,  C23C16/4405 ,  C23C16/4408 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771

Abstract: Apparatuses and methods for cleaning a semiconductor processing chamber is provided. The semiconductor processing chamber may include a UV radiation source, a substrate holder, and a UV transmissive window. The UV transmissive window may include one or multiple panes. One or more panes of the UV transmissive window may be non-reactive with fluorine containing chemistries. In multi-pane windows a purge gas flow path may be formed in the gap between windows. A purge gas may be flowed through the purge gas flow path to prevent process gases used in the chamber interior from reaching one or more panes of the UV transmissive window.

Abstract translation: 提供了用于清洁半导体处理室的设备和方法。 半导体处理室可以包括UV辐射源，衬底保持器和UV透射窗。 UV透射窗可以包括一个或多个窗格。 UV透射窗的一个或多个窗可以与含氟化学物质不反应。 在多窗格窗口中，可以在窗口之间的间隙中形成净化气体流动路径。 净化气体可以流过净化气体流动路径，以防止室内使用的工艺气体到达UV透射窗的一个或多个窗格。

公开(公告)号：US10240236B2

公开(公告)日：2019-03-26

申请号：US14641179

申请日：2015-03-06

Applicant: Lam Research Corporation

Inventor： James Lee ,  George Andrew Antonelli ,  Kevin M. McLaughlin ,  Andrew John McKerrow ,  Curtis Bailey ,  Alexander R. Fox ,  Stephen Lau ,  Eugene Smargiassi ,  Casey Holder ,  Troy Daniel Ribaudo ,  Xiaolan Chen

IPC: B08B7/00 ,  B08B9/00 ,  C23C16/44 ,  C23C16/48 ,  H01L21/67 ,  H01L21/687

Abstract: Apparatuses and methods for cleaning a semiconductor processing chamber is provided. The semiconductor processing chamber may include a UV radiation source, a substrate holder, and a UV transmissive window. The UV transmissive window may include one or multiple panes. One or more panes of the UV transmissive window may be non-reactive with fluorine containing chemistries. In multi-pane windows a purge gas flow path may be formed in the gap between windows. A purge gas may be flowed through the purge gas flow path to prevent process gases used in the chamber interior from reaching one or more panes of the UV transmissive window.

公开(公告)号：US20180182607A1

公开(公告)日：2018-06-28

申请号：US15389930

申请日：2016-12-23

Applicant: LAM RESEARCH CORPORATION

Inventor： Xiaolan Chen ,  Matthew Mudrow ,  Curtis Bailey ,  Stephen Lau ,  Mitchell Lamar

IPC: H01J61/35 ,  H01J65/04 ,  H01J61/12 ,  H01J61/32 ,  A61L2/10 ,  H01L21/26 ,  H01L21/02

CPC classification number: H01J61/35 ,  A61L2/10 ,  A61L9/20 ,  A61L2202/11 ,  A61L2209/212 ,  H01J61/12 ,  H01J61/322 ,  H01J65/042

Abstract: An envelope of an ultraviolet (UV) bulb comprises a tube of UV transmissive material configured to contain a UV emissive material and a plasma resistant coating on an inner surface of the tube wherein the coating has been deposited by atomic layer deposition (ALD) and is the only material attached to the inner surface of the tube. The tube can be an endless tube having a circular shape and the coating can be an ALD aluminum oxide coating. The UV transmissive material can comprise quartz or fused silica and the tube can have a wall thickness of about 1 to about 2 mm. The coating can have a thickness of no greater than about 200 nm such as about 120 nm to 160 nm. The circular tube can be formed into a torus shape which can have an outer diameter of about 200 mm and the tube itself can have an outer diameter of about 30 mm. The ALD aluminum oxide coating can be a pinhole free conformal coating. A UV bulb comprising the envelope can contain mercury and inert gas such as argon with pressure inside the UV bulb below 100 Torr. A method of curing a film on a semiconductor substrate, comprises supporting a semiconductor substrate in a curing chamber and exposing a layer on the semiconductor substrate to UV radiation produced by the UV bulb. Other uses include semiconductor substrate surface cleaning or sterilization of fluids and objects.

公开(公告)号：US10354857B2

公开(公告)日：2019-07-16

申请号：US15389930

申请日：2016-12-23

Applicant: LAM RESEARCH CORPORATION

Inventor： Xiaolan Chen ,  Matthew Mudrow ,  Curtis Bailey ,  Stephen Lau ,  Mitchell Lamar

IPC: H01J61/35 ,  H01J65/04 ,  H01L21/26 ,  H01J61/12 ,  H01J61/32 ,  A61L2/10 ,  A61L9/20

Abstract: An envelope of an ultraviolet (UV) bulb comprises a tube of UV transmissive material configured to contain a UV emissive material and a plasma resistant coating on an inner surface of the tube wherein the coating has been deposited by atomic layer deposition (ALD) and is the only material attached to the inner surface of the tube. The tube can be an endless tube having a circular shape and the coating can be an ALD aluminum oxide coating. The UV transmissive material can comprise quartz or fused silica and the tube can have a wall thickness of about 1 to about 2 mm. The coating can have a thickness of no greater than about 200 nm such as about 120 nm to 160 nm. The circular tube can be formed into a torus shape which can have an outer diameter of about 200 mm and the tube itself can have an outer diameter of about 30 mm. The ALD aluminum oxide coating can be a pinhole free conformal coating. A UV bulb comprising the envelope can contain mercury and inert gas such as argon with pressure inside the UV bulb below 100 Torr. A method of curing a film on a semiconductor substrate, comprises supporting a semiconductor substrate in a curing chamber and exposing a layer on the semiconductor substrate to UV radiation produced by the UV bulb. Other uses include semiconductor substrate surface cleaning or sterilization of fluids and objects.