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公开(公告)号：US10354857B2
公开(公告)日：2019-07-16
申请号：US15389930
申请日：2016-12-23
发明人： Xiaolan Chen , Matthew Mudrow , Curtis Bailey , Stephen Lau , Mitchell Lamar
摘要： An envelope of an ultraviolet (UV) bulb comprises a tube of UV transmissive material configured to contain a UV emissive material and a plasma resistant coating on an inner surface of the tube wherein the coating has been deposited by atomic layer deposition (ALD) and is the only material attached to the inner surface of the tube. The tube can be an endless tube having a circular shape and the coating can be an ALD aluminum oxide coating. The UV transmissive material can comprise quartz or fused silica and the tube can have a wall thickness of about 1 to about 2 mm. The coating can have a thickness of no greater than about 200 nm such as about 120 nm to 160 nm. The circular tube can be formed into a torus shape which can have an outer diameter of about 200 mm and the tube itself can have an outer diameter of about 30 mm. The ALD aluminum oxide coating can be a pinhole free conformal coating. A UV bulb comprising the envelope can contain mercury and inert gas such as argon with pressure inside the UV bulb below 100 Torr. A method of curing a film on a semiconductor substrate, comprises supporting a semiconductor substrate in a curing chamber and exposing a layer on the semiconductor substrate to UV radiation produced by the UV bulb. Other uses include semiconductor substrate surface cleaning or sterilization of fluids and objects.
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公开(公告)号：US20220162755A1
公开(公告)日：2022-05-26
申请号：US17644761
申请日：2021-12-16
发明人： Fayaz Shaikh , Nick Linebarger , Curtis Bailey
IPC分类号： C23C16/455 , H01L21/02 , H01L21/687 , C23C16/505 , C23C16/52 , H01L21/67 , C23C16/04
摘要： A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition. The showerhead provides a purge gas during the backside deposition.
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公开(公告)号：US10240236B2
公开(公告)日：2019-03-26
申请号：US14641179
申请日：2015-03-06
发明人： James Lee , George Andrew Antonelli , Kevin M. McLaughlin , Andrew John McKerrow , Curtis Bailey , Alexander R. Fox , Stephen Lau , Eugene Smargiassi , Casey Holder , Troy Daniel Ribaudo , Xiaolan Chen
摘要： Apparatuses and methods for cleaning a semiconductor processing chamber is provided. The semiconductor processing chamber may include a UV radiation source, a substrate holder, and a UV transmissive window. The UV transmissive window may include one or multiple panes. One or more panes of the UV transmissive window may be non-reactive with fluorine containing chemistries. In multi-pane windows a purge gas flow path may be formed in the gap between windows. A purge gas may be flowed through the purge gas flow path to prevent process gases used in the chamber interior from reaching one or more panes of the UV transmissive window.
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公开(公告)号：US20220162754A1
公开(公告)日：2022-05-26
申请号：US17644760
申请日：2021-12-16
发明人： Fayaz Shaikh , Nick Linebarger , Curtis Bailey
IPC分类号： C23C16/455 , H01L21/02 , H01L21/687 , C23C16/505 , C23C16/52 , H01L21/67 , C23C16/04
摘要： A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition. The showerhead provides a purge gas during the backside deposition.
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公开(公告)号：US20160258057A1
公开(公告)日：2016-09-08
申请号：US14641179
申请日：2015-03-06
发明人： James Lee , George Andrew Antonelli , Kevin M. McLaughlin , Andrew John McKerrow , Curtis Bailey , Alexander R. Fox , Stephen Lau , Eugene Smargiassi , Casey Holder , Troy Daniel Ribaudo , Xiaolan Chen
CPC分类号： C23C16/488 , B08B7/0057 , B08B9/00 , C23C16/4405 , C23C16/4408 , H01L21/67115 , H01L21/6719 , H01L21/68764 , H01L21/68771
摘要： Apparatuses and methods for cleaning a semiconductor processing chamber is provided. The semiconductor processing chamber may include a UV radiation source, a substrate holder, and a UV transmissive window. The UV transmissive window may include one or multiple panes. One or more panes of the UV transmissive window may be non-reactive with fluorine containing chemistries. In multi-pane windows a purge gas flow path may be formed in the gap between windows. A purge gas may be flowed through the purge gas flow path to prevent process gases used in the chamber interior from reaching one or more panes of the UV transmissive window.
摘要翻译： 提供了用于清洁半导体处理室的设备和方法。 半导体处理室可以包括UV辐射源，衬底保持器和UV透射窗。 UV透射窗可以包括一个或多个窗格。 UV透射窗的一个或多个窗可以与含氟化学物质不反应。 在多窗格窗口中，可以在窗口之间的间隙中形成净化气体流动路径。 净化气体可以流过净化气体流动路径，以防止室内使用的工艺气体到达UV透射窗的一个或多个窗格。
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公开(公告)号：US20140096834A1
公开(公告)日：2014-04-10
申请号：US14096508
申请日：2013-12-04
发明人： Damien Slevin , Brad Laird , Curtis Bailey , Ming Li , Sirish Reddy , James Sims , Mohamed Sabri , Saangrut Sangplug
IPC分类号： C23C16/455
CPC分类号： C23C16/45589 , C23C16/4402 , C23C16/4486 , C23C16/45561 , Y10T137/0318
摘要： A method for supplying vapor to a chamber includes providing a first diverter valve that, when open, diverts vapor away from the chamber, and a second diverter valve that, when open, supplies the vapor to the chamber; supplying a carrier gas to the chamber; after supplying the carrier gas, creating plasma in the chamber while a substrate is in the chamber; opening the first diverter valve and closing the second diverter valve; supplying the vapor by vaporizing at least one liquid precursor in a carrier gas; after a first predetermined period sufficient for the vapor to reach steady-state flow, closing the first diverter valve and opening the second diverter valve to supply the vapor to the chamber; and after a second predetermined period following the first predetermined period, opening the first diverter valve and closing the second diverter valve to stop supplying the vapor to the chamber.
摘要翻译： 一种向腔室供应蒸汽的方法包括：提供一个第一分流阀，当打开时将蒸气转移出离开室，第二分流阀在打开时将蒸汽供应到室; 向所述室供应载气; 在供应载气之后，在基板在腔室中时在腔室中产生等离子体; 打开第一分流阀并关闭第二分流阀; 通过在载气中汽化至少一种液体前体来供应蒸气; 在足以使蒸气达到稳态流动的第一预定时间段之后，关闭第一分流阀并打开第二分流阀以将蒸汽供应到室; 并且在所述第一预定时段之后的第二预定时段之后，打开所述第一分流阀并关闭所述第二分流阀以停止向所述室供应蒸汽。
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公开(公告)号：US11441222B2
公开(公告)日：2022-09-13
申请号：US17644759
申请日：2021-12-16
发明人： Fayaz Shaikh , Nick Linebarger , Curtis Bailey
IPC分类号： H01L21/68 , C23C16/455 , H01L21/02 , H01L21/687 , C23C16/505 , C23C16/52 , H01L21/67 , C23C16/04
摘要： A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition. The showerhead provides a purge gas during the backside deposition.
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公开(公告)号：US20220162753A1
公开(公告)日：2022-05-26
申请号：US17644759
申请日：2021-12-16
发明人： Fayaz Shaikh , Nick Linebarger , Curtis Bailey
IPC分类号： C23C16/455 , H01L21/02 , H01L21/687 , C23C16/505 , C23C16/52 , H01L21/67 , C23C16/04
摘要： A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition. The showerhead provides a purge gas during the backside deposition.
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公开(公告)号：US20190062918A1
公开(公告)日：2019-02-28
申请号：US15692300
申请日：2017-08-31
发明人： Fayaz Shaikh , Nick Linebarger , Curtis Bailey
IPC分类号： C23C16/455 , H01L21/67 , H01L21/687 , H01L21/02 , C23C16/505 , C23C16/52
摘要： A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition. The showerhead provides a purge gas during the backside deposition.
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公开(公告)号：US20180182607A1
公开(公告)日：2018-06-28
申请号：US15389930
申请日：2016-12-23
发明人： Xiaolan Chen , Matthew Mudrow , Curtis Bailey , Stephen Lau , Mitchell Lamar
CPC分类号： H01J61/35 , A61L2/10 , A61L9/20 , A61L2202/11 , A61L2209/212 , H01J61/12 , H01J61/322 , H01J65/042
摘要： An envelope of an ultraviolet (UV) bulb comprises a tube of UV transmissive material configured to contain a UV emissive material and a plasma resistant coating on an inner surface of the tube wherein the coating has been deposited by atomic layer deposition (ALD) and is the only material attached to the inner surface of the tube. The tube can be an endless tube having a circular shape and the coating can be an ALD aluminum oxide coating. The UV transmissive material can comprise quartz or fused silica and the tube can have a wall thickness of about 1 to about 2 mm. The coating can have a thickness of no greater than about 200 nm such as about 120 nm to 160 nm. The circular tube can be formed into a torus shape which can have an outer diameter of about 200 mm and the tube itself can have an outer diameter of about 30 mm. The ALD aluminum oxide coating can be a pinhole free conformal coating. A UV bulb comprising the envelope can contain mercury and inert gas such as argon with pressure inside the UV bulb below 100 Torr. A method of curing a film on a semiconductor substrate, comprises supporting a semiconductor substrate in a curing chamber and exposing a layer on the semiconductor substrate to UV radiation produced by the UV bulb. Other uses include semiconductor substrate surface cleaning or sterilization of fluids and objects.
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