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    High power low pressure UV bulb with plasma resistant coating
    2.
    发明授权
    High power low pressure UV bulb with plasma resistant coating 有权

    公开(公告)号：US10354857B2

    公开(公告)日：2019-07-16

    申请号：US15389930

    申请日：2016-12-23

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Xiaolan Chen ,  Matthew Mudrow ,  Curtis Bailey ,  Stephen Lau ,  Mitchell Lamar

    IPC: H01J61/35 ,  H01J65/04 ,  H01L21/26 ,  H01J61/12 ,  H01J61/32 ,  A61L2/10 ,  A61L9/20

    Abstract: An envelope of an ultraviolet (UV) bulb comprises a tube of UV transmissive material configured to contain a UV emissive material and a plasma resistant coating on an inner surface of the tube wherein the coating has been deposited by atomic layer deposition (ALD) and is the only material attached to the inner surface of the tube. The tube can be an endless tube having a circular shape and the coating can be an ALD aluminum oxide coating. The UV transmissive material can comprise quartz or fused silica and the tube can have a wall thickness of about 1 to about 2 mm. The coating can have a thickness of no greater than about 200 nm such as about 120 nm to 160 nm. The circular tube can be formed into a torus shape which can have an outer diameter of about 200 mm and the tube itself can have an outer diameter of about 30 mm. The ALD aluminum oxide coating can be a pinhole free conformal coating. A UV bulb comprising the envelope can contain mercury and inert gas such as argon with pressure inside the UV bulb below 100 Torr. A method of curing a film on a semiconductor substrate, comprises supporting a semiconductor substrate in a curing chamber and exposing a layer on the semiconductor substrate to UV radiation produced by the UV bulb. Other uses include semiconductor substrate surface cleaning or sterilization of fluids and objects.

    METHOD AND APPARATUS FOR REMOTE PLASMA TREATMENT FOR REDUCING METAL OXIDES ON A METAL SEED LAYER
    3.
    发明申请
    METHOD AND APPARATUS FOR REMOTE PLASMA TREATMENT FOR REDUCING METAL OXIDES ON A METAL SEED LAYER 审中-公开
    远程等离子体处理方法和装置，用于减少金属种子层上的金属氧化物

    公开(公告)号：US20150072538A1

    公开(公告)日：2015-03-12

    申请号：US14020339

    申请日：2013-09-06

    Applicant: Lam Research Corporation

    Inventor： Tighe A. Spurlin ,  James E. Duncan ,  Stephen Lau ,  Marshall Stowell ,  Jonathan D. Reid ,  David Porter

    IPC: H01L21/268 ,  H01L21/677 ,  H01L21/67

    CPC classification number: H01L21/67207 ,  C25D5/34 ,  C25D7/123 ,  C25D17/00 ,  H01L21/02068 ,  H01L21/321 ,  H01L21/76861 ,  H01L21/76873

    Abstract: Method and apparatus for reducing metal oxide surfaces to modified metal surfaces are disclosed. By exposing a metal oxide surface to a remote plasma, the metal oxide surface on a substrate is reduced. A remote plasma apparatus can treat the metal oxide surface as well as cool, load/unload, and move the substrate within a single standalone apparatus. The remote plasma apparatus includes a processing chamber and a controller configured to provide a substrate having a metal seed layer in a processing chamber, move the substrate towards a substrate support in the processing chamber, form a remote plasma of a reducing gas species, expose a metal seed layer of the substrate to the remote plasma, and expose the substrate to a cooling gas. In some embodiments, the remote plasma apparatus is part of an electroplating apparatus.

    Abstract translation: 公开了将金属氧化物表面还原成改性金属表面的方法和装置。 通过将金属氧化物表面暴露于远程等离子体，减少了衬底上的金属氧化物表面。 远程等离子体装置可以处理金属氧化物表面以及冷却，加载/卸载，并将基板移动到单个独立设备内。 远程等离子体装置包括处理室和控制器，其被配置为在处理室中提供具有金属种子层的基板，将基板朝向处理室中的基板支撑件移动，形成还原气体种类的远程等离子体， 将基板的金属种子层与远程等离子体接合，并将基板暴露于冷却气体。 在一些实施例中，远程等离子体装置是电镀装置的一部分。

    HIGH POWER LOW PRESSURE UV BULB WITH PLASMA RESISTANT COATING
    4.
    发明申请
    HIGH POWER LOW PRESSURE UV BULB WITH PLASMA RESISTANT COATING 审中-公开

    公开(公告)号：US20180182607A1

    公开(公告)日：2018-06-28

    申请号：US15389930

    申请日：2016-12-23

    Applicant: LAM RESEARCH CORPORATION

    Inventor： Xiaolan Chen ,  Matthew Mudrow ,  Curtis Bailey ,  Stephen Lau ,  Mitchell Lamar

    IPC: H01J61/35 ,  H01J65/04 ,  H01J61/12 ,  H01J61/32 ,  A61L2/10 ,  H01L21/26 ,  H01L21/02

    CPC classification number: H01J61/35 ,  A61L2/10 ,  A61L9/20 ,  A61L2202/11 ,  A61L2209/212 ,  H01J61/12 ,  H01J61/322 ,  H01J65/042

    Abstract: An envelope of an ultraviolet (UV) bulb comprises a tube of UV transmissive material configured to contain a UV emissive material and a plasma resistant coating on an inner surface of the tube wherein the coating has been deposited by atomic layer deposition (ALD) and is the only material attached to the inner surface of the tube. The tube can be an endless tube having a circular shape and the coating can be an ALD aluminum oxide coating. The UV transmissive material can comprise quartz or fused silica and the tube can have a wall thickness of about 1 to about 2 mm. The coating can have a thickness of no greater than about 200 nm such as about 120 nm to 160 nm. The circular tube can be formed into a torus shape which can have an outer diameter of about 200 mm and the tube itself can have an outer diameter of about 30 mm. The ALD aluminum oxide coating can be a pinhole free conformal coating. A UV bulb comprising the envelope can contain mercury and inert gas such as argon with pressure inside the UV bulb below 100 Torr. A method of curing a film on a semiconductor substrate, comprises supporting a semiconductor substrate in a curing chamber and exposing a layer on the semiconductor substrate to UV radiation produced by the UV bulb. Other uses include semiconductor substrate surface cleaning or sterilization of fluids and objects.

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