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    CLEANING OF CARBON-BASED CONTAMINANTS IN METAL INTERCONNECTS FOR INTERCONNECT CAPPING APPLICATIONS
    5.
    发明申请
    CLEANING OF CARBON-BASED CONTAMINANTS IN METAL INTERCONNECTS FOR INTERCONNECT CAPPING APPLICATIONS 审中-公开
    用于互连接头应用的金属互连中碳基污染物的清洁

    公开(公告)号：US20150380296A1

    公开(公告)日：2015-12-31

    申请号：US14314479

    申请日：2014-06-25

    Applicant: Lam Research Corporation

    Inventor： George Andrew Antonelli ,  Thomas Joseph Knisley ,  Pramod Subramonium

    IPC: H01L21/768 ,  C23C16/02 ,  C23C16/52

    CPC classification number: C23C16/0227 ,  C23C16/16 ,  H01L21/02074 ,  H01L21/28556 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883

    Abstract: Protective caps residing at an interface between copper lines and dielectric diffusion barrier layers are used to improve various performance characteristics of interconnects. The caps, such as cobalt-containing caps or manganese-containing caps, are selectively deposited onto exposed copper lines in a presence of exposed dielectric using CVD or ALD methods. The deposition of the capping material is affected by the presence of carbon-containing contaminants on the surface of copper, which may lead to poor or uneven growth of the capping layer. A method of removing carbon-containing contaminants from the copper surface prior to deposition of caps involves contacting the substrate containing the exposed copper surface with a silylating agent at a first temperature to form a layer of reacted silylating agent on the copper surface, followed by heating the substrate at a higher temperature to release the reacted silylating agent from the copper surface.

    Abstract translation: 使用驻留在铜线和电介质扩散阻挡层之间的界面处的保护盖来改善互连的各种性能特征。 在使用CVD或ALD方法的暴露的电介质的存在下，将诸如含钴帽或含锰帽的帽选择性地沉积到暴露的铜线上。 封盖材料的沉积受铜表面上含碳污染物的存在的影响，这可能导致封盖层的生长不良或不均匀。 在沉积帽子之前从铜表面除去含碳污染物的方法包括在第一温度下将含有暴露的铜表面的基材与甲硅烷基化剂接触，以在铜表面上形成一层反应的甲硅烷基化试剂，然后加热 该基底在较高温度下从铜表面释放反应的甲硅烷基化剂。

    OXYGEN-CONTAINING CERAMIC HARD MASKS AND ASSOCIATED WET-CLEANS
    6.
    发明申请
    OXYGEN-CONTAINING CERAMIC HARD MASKS AND ASSOCIATED WET-CLEANS 有权
    含氧的陶瓷硬掩模和相关的清洁剂

    公开(公告)号：US20140175617A1

    公开(公告)日：2014-06-26

    申请号：US14105026

    申请日：2013-12-12

    Applicant: Lam Research Corporation

    Inventor： George Andrew Antonelli ,  Alice Hollister ,  Sirish Reddy

    IPC: H01L21/316 ,  H01L21/67 ,  H01L21/311

    CPC classification number: H01L21/67207 ,  C23C16/30 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/67259 ,  H01L21/76811 ,  H01L21/76813

    Abstract: A method of forming an oxygen-containing ceramic hard mask film on a semiconductor substrate involves receiving a semiconductor substrate in a plasma-enhanced chemical vapor deposition (PECVD) process chamber and depositing forming by PEVCD on the substrate an oxygen-containing ceramic hard mask film, the film being etch selective to low-k dielectric and copper, resistant to plasma dry-etch and removable by wet-etch. The method may further involve removing the oxygen-containing ceramic hard mask film from the substrate with a wet etch. Corresponding films and apparatus are also provided.

    Abstract translation: 在半导体衬底上形成含氧陶瓷硬掩模膜的方法包括在等离子体增强化学气相沉积（PECVD）处理室中接收半导体衬底，并通过PEVCD在衬底上沉积含氧陶瓷硬掩模膜 ，该膜对低k电介质和铜进行蚀刻选择性，耐等离子体干蚀刻和通过湿蚀刻可去除。 该方法可以进一步包括用湿法蚀刻从衬底去除含氧陶瓷硬掩模膜。 还提供了相应的胶片和装置。

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