公开(公告)号：US12072689B2

公开(公告)日：2024-08-27

申请号：US17442517

申请日：2020-03-24

申请人： LAM RESEARCH CORPORATION

发明人： Raymond Chau ,  Chung-Ho Huang ,  Henry Chan ,  Vincent Wong ,  Yu Ding ,  Ngoc-Diep Nguyen ,  Gerramine Manuguid

IPC分类号： G05B19/418 ,  C23C14/54 ,  C23C16/52 ,  H01J37/32

CPC分类号： G05B19/41865 ,  C23C14/54 ,  C23C16/52 ,  G05B19/41885 ,  H01J37/32926 ,  G05B2219/39001 ,  G05B2219/45031 ,  G05B2219/45212 ,  H01J2237/334

摘要： For etching tools, a neural network model is trained to predict optimum scheduling parameter values. The model is trained using data collected from preventive maintenance operations, recipe times, and wafer-less auto clean times as inputs. The model is used to capture underlying relationships between scheduling parameter values and various wafer processing scenarios to make predictions. Additionally, in tools used for multiple parallel material deposition processes, a nested neural network based model is trained using machine learning. The model is initially designed and trained offline using simulated data and then trained online using real tool data for predicting wafer routing path and scheduling. The model improves accuracy of scheduler pacing and achieves highest tool/fleet utilization, shortest wait times, and fastest throughput.

公开(公告)号：US20170342590A1

公开(公告)日：2017-11-30

申请号：US15413252

申请日：2017-01-23

申请人： Lam Research Corporation

发明人： Kari Thorkelsson ,  Jacob Lee Hiester ,  Yu Ding ,  Bryan L. Buckalew

IPC分类号： C25D21/12 ,  C25D7/12 ,  C25D5/08 ,  C25D5/18 ,  C25D17/06 ,  C25D17/00

CPC分类号： C25D21/12 ,  C25D5/08 ,  C25D5/18 ,  C25D17/001 ,  C25D17/004 ,  C25D17/06 ,  C25D21/10

摘要： The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold between the channeled plate and substrate, and on the sides by a flow confinement ring. A seal may be provided between the bottom surface of a substrate holder and the top surface of an element below the substrate holder (e.g., the flow confinement ring). During plating, the apparatus may switch between a sealed state and an unsealed state, for example by lowering and lifting the substrate and substrate holder as appropriate to engage and disengage the seal. A higher level of applied current or applied voltage may be provided to the substrate when the apparatus is in the sealed state compared to the unsealed state.