METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE

    公开(公告)号:US20210313290A1

    公开(公告)日:2021-10-07

    申请号:US16972528

    申请日:2020-01-23

    申请人: LG CHEM, LTD.

    IPC分类号: H01L23/00

    摘要: The present disclosure relates to a method for manufacturing a semiconductor package including vacuum-laminating a non-conductive film on a substrate on which a plurality of through silicon vias are provided and bump electrodes are formed, and then performing UV irradiation, wherein an increase in melt viscosity before and after UV irradiation can be adjusted to 30% or less, whereby a bonding can be performed without voids during thermo-compression bonding, and resin-insertion phenomenon between solders can be prevented, fillets can be minimized and reliability can be improved.