公开(公告)号：US10222671B2

公开(公告)日：2019-03-05

申请号：US15797255

申请日：2017-10-30

Applicant: LG Display Co., Ltd.

Inventor： Changseung Woo ,  Byunghyun Lee ,  Soonhwan Hong ,  Gyusik Won

IPC: G02F1/1368 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1362 ,  H01L27/12

Abstract: The present disclosure relates to a thin film transistor substrate having a color filter layer. The present disclosure provides a thin film transistor substrate comprising: a plurality of pixel areas disposed in a matrix manner on a substrate, each pixel area including an aperture area and a non-aperture area; a first color filter and a second color filter stacked at the non-aperture area on the substrate; an overcoat layer disposed on the first color filter and the second color filter; a semiconductor layer disposed at the non-aperture area on the overcoat layer; a gate insulating layer and a gate electrode stacked on a middle portion of the semiconductor layer; a third color filter at the non-aperture area on the semiconductor layer and the gate electrode; and a source electrode and a drain electrode disposed on the third color filter.

公开(公告)号：US20180120613A1

公开(公告)日：2018-05-03

申请号：US15797255

申请日：2017-10-30

Applicant: LG Display Co., Ltd.

Inventor： Changseung Woo ,  Byunghyun Lee ,  Soonhwan Hong ,  Gyusik Won

IPC: G02F1/1368 ,  H01L27/12 ,  G02F1/1343 ,  G02F1/1333 ,  G02F1/1362

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136209 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/136222 ,  G02F2001/136231 ,  G02F2001/13685 ,  G02F2201/121 ,  G02F2201/123 ,  H01L27/124

Abstract: The present disclosure relates to a thin film transistor substrate having a color filter layer. The present disclosure provides a thin film transistor substrate comprising: a plurality of pixel areas disposed in a matrix manner on a substrate, each pixel area including an aperture area and a non-aperture area; a first color filter and a second color filter stacked at the non-aperture area on the substrate; an overcoat layer disposed on the first color filter and the second color filter; a semiconductor layer disposed at the non-aperture area on the overcoat layer; a gate insulating layer and a gate electrode stacked on a middle portion of the semiconductor layer; a third color filter at the non-aperture area on the semiconductor layer and the gate electrode; and a source electrode and a drain electrode disposed on the third color filter.