Thin film transistor array substrate and method for fabricating the same
    1.
    发明授权
    Thin film transistor array substrate and method for fabricating the same 有权
    薄膜晶体管阵列基板及其制造方法

    公开(公告)号:US09368524B2

    公开(公告)日:2016-06-14

    申请号:US14472664

    申请日:2014-08-29

    Abstract: A thin film transistor array substrate including a substrate, a gate line intersecting a data line to define a pixel region on the substrate, a switching element disposed at an intersection of the gate line and the data line, a plurality of pixel electrodes and a plurality of first common electrodes alternately arranged on a protective film in the pixel region, a second common electrode overlapping the data line, a first storage electrode on the substrate, a second storage electrode overlapping the first storage electrode, and an organic insulation film on the switching element, the second storage electrode, the data line, a gate pad, and a data pad, wherein the second common electrode covers the data line, the protective film and the organic insulation film, and has inclined surfaces connected to the protective film within the pixel region.

    Abstract translation: 一种薄膜晶体管阵列基板,包括基板,与数据线交叉以限定基板上的像素区域的栅极线,设置在栅极线和数据线的交叉点处的开关元件,多个像素电极和多个像素电极 交替布置在像素区域中的保护膜上的第一公共电极,与数据线重叠的第二公共电极,基板上的第一存储电极,与第一存储电极重叠的第二存储电极和开关上的有机绝缘膜 元件,第二存储电极,数据线,栅极焊盘和数据焊盘,其中第二公共电极覆盖数据线,保护膜和有机绝缘膜,并且具有连接到保护膜内的倾斜表面 像素区域。

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