QUANTUM DOT LIGHT-EMITTING DIODE AND LIGHT-EMITTING DISPLAY DEVICE USING THE DIODE

    公开(公告)号:US20180138434A1

    公开(公告)日:2018-05-17

    申请号:US15810688

    申请日:2017-11-13

    IPC分类号: H01L51/50 H01L33/06 H01L29/66

    摘要: Provided are a quantum dot light-emitting diode including an interface control layer located between a luminous material layer using quantum dots as a luminous material and at least one charge transfer layer for supplying charges to the luminous material layer, and a quantum dot light-emitting display device including the same. Since the interface control layer is provided between the luminous material layer and the at least one charge transfer layer, the occurrence of an interface defect due to an interfacial energy mismatch between the luminous material layer and the at least one charge transfer layer may be prevented to obtain the luminous material layer including quantum dots with uniform morphology. Furthermore, since the interface control layer is used, oxygen or moisture may be prevented from permeating into the luminous material layer, thereby preventing degradation of the quantum dots used as a luminous material.