公开(公告)号：US11769783B2

公开(公告)日：2023-09-26

申请号：US17112449

申请日：2020-12-04

Applicant: LG Display Co., Ltd.

Inventor： Minsuk Kong ,  Moonsoo Kang

IPC: H01L27/146 ,  H01L31/105

CPC classification number: H01L27/14663 ,  H01L27/1462 ,  H01L31/105

Abstract: A thin film transistor array substrate for a digital X-ray detector device includes a base substrate; a driving thin film transistor disposed over the base substrate; a PIN (P type semiconductor-Intrinsic type semiconductor-N type semiconductor) diode configured to be connected to the driving thin film transistor, the PIN diode including a lower electrode, a PIN layer, and an upper electrode; and at least one leakage current blocking layer configured to cover a side surface of the PIN layer and contact the PIN layer to thereby minimize generation of the leakage current of the PIN diode and improve characteristics such as detective quantum efficiency (DQE) and signal to noise ratio (SNR) and improving an image quality of the digital X-ray detector device.

公开(公告)号：US20220210345A1

公开(公告)日：2022-06-30

申请号：US17542574

申请日：2021-12-06

Applicant: LG DISPLAY CO., LTD.

Inventor： Shihyung Park ,  Moonsoo Kang ,  Jaeho Yoon ,  Donghyeon Jang

IPC: H04N5/32 ,  H01L27/146

Abstract: A digital X-ray detector includes a width of a data line or a gate line extending across a dummy pixel area is smaller than a width of the data line or the gate line extending across an active area, a width of a dummy gate line or a dummy data line extending across the dummy pixel area is smaller than a width of the gate line or the data line extending across the active area, so that static electricity generated during a manufacturing process does not randomly flow into the active area, but rather flows into the dummy pixel area having the lowest capacitance, and the static electricity may be guided not to the active area but to the dummy gate line or dummy data line in the dummy pixel area, thereby minimizing line defects or block luminance deviation defects caused by the static electricity generated during the manufacturing process.

公开(公告)号：US12133015B2

公开(公告)日：2024-10-29

申请号：US17542574

申请日：2021-12-06

Applicant: LG DISPLAY CO., LTD.

Inventor： Shihyung Park ,  Moonsoo Kang ,  Jaeho Yoon ,  Donghyeon Jang

IPC: H04N5/32 ,  H01L27/146

CPC classification number: H04N5/32 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/14658

Abstract: A digital X-ray detector includes a width of a data line or a gate line extending across a dummy pixel area is smaller than a width of the data line or the gate line extending across an active area, a width of a dummy gate line or a dummy data line extending across the dummy pixel area is smaller than a width of the gate line or the data line extending across the active area, so that static electricity generated during a manufacturing process does not randomly flow into the active area, but rather flows into the dummy pixel area having the lowest capacitance, and the static electricity may be guided not to the active area but to the dummy gate line or dummy data line in the dummy pixel area, thereby minimizing line defects or block luminance deviation defects caused by the static electricity generated during the manufacturing process.

公开(公告)号：US11757046B2

公开(公告)日：2023-09-12

申请号：US17100328

申请日：2020-11-20

Applicant: LG Display Co., Ltd.

Inventor： Jaeho Yoon ,  Moonsoo Kang ,  Donghyeon Jang ,  Shihyung Park

IPC: G01T1/36 ,  H01L29/786 ,  H01L29/22 ,  H01L27/146 ,  H01L29/66

CPC classification number: H01L29/78693 ,  G01T1/36 ,  H01L27/14658 ,  H01L27/14689 ,  H01L29/2206 ,  H01L29/66742

Abstract: The present disclosure relates to a thin film transistor array substrate for a digital X-ray detector device and the digital X-ray detector device and a manufacturing method thereof. The thin film transistor array substrate comprises: a base substrate comprising a driving area and a non-driving area; at least one PIN diode disposed within the driving area of the base substrate and comprising a lower electrode, a PIN layer, and an upper electrode; and at least one align mark disposed within the non-driving area of the base substrate, wherein the align mark comprises a first align mark layer, an align PIN layer, and a second align mark layer.

公开(公告)号：US11515354B2

公开(公告)日：2022-11-29

申请号：US17106980

申请日：2020-11-30

Applicant: LG Display Co., Ltd.

Inventor： Jaeho Yoon ,  Moonsoo Kang ,  Donghyeon Jang ,  Shihyung Park

IPC: H01L27/146 ,  H01L31/105

Abstract: A thin film transistor array substrate for a digital X-ray detector device includes a p+ type semiconductor layer and a p− type semiconductor layer having different impurity concentrations are disposed above an intrinsic semiconductor layer of the PIN diode and an n+ type semiconductor layer and an n− type semiconductor layer having different impurity concentrations are disposed below the intrinsic semiconductor layer of the PIN diode to minimize ejection of holes by the p− type semiconductor layer and minimize ejection of electros by the n− type semiconductor layer, thereby minimizing occurrence of leakage current of the PIN diode.

公开(公告)号：US11817519B2

公开(公告)日：2023-11-14

申请号：US17535334

申请日：2021-11-24

Applicant: LG DISPLAY CO., LTD.

Inventor： Jaeho Yoon ,  Donghyeon Jang ,  Shihyung Park ,  Moonsoo Kang ,  Donghwan Lee

IPC: H01L31/117 ,  H01L27/146 ,  H10K39/36

CPC classification number: H01L31/117 ,  H01L27/14658 ,  H10K39/36

Abstract: A lower electrode of a PIN diode and a second protective layer covering the PIN diode are formed not using separate mask processes, but using the same mask process using the same mask, thereby reducing the number of mask processes and thus increasing process efficiency. Further, the lower electrode of the PIN diode is patterned and then the second protective film covering the PIN diode is patterned such that both the former patterning and the latter patterning are carried out using a single mask process, thereby reduce increase in defects due to foreign materials or stains.

公开(公告)号：US11594569B2

公开(公告)日：2023-02-28

申请号：US17102410

申请日：2020-11-23

Applicant: LG Display Co., Ltd.

Inventor： Jaeho Yoon ,  Moonsoo Kang ,  Donghyeon Jang ,  Shihyung Park

IPC: H01L27/12 ,  H01L27/146 ,  H01L31/115 ,  H01L31/105 ,  H04N5/374

Abstract: A thin film transistor array substrate for a digital X-ray detector device including a base substrate; a plurality of data lines and a plurality of gate lines disposed on the base substrate and arranged to cross each other; a driving thin film transistor disposed above the base substrate and including a first electrode, a second electrode, a gate electrode and an active layer; a PIN diode connected to the driving thin film transistor; and at least one shielding layers disposed above the driving thin film transistor and configured to overlay the active layer, wherein the at least one shielding layers are electrically connected to the plurality of data lines.

公开(公告)号：US11430826B2

公开(公告)日：2022-08-30

申请号：US17125393

申请日：2020-12-17

Applicant: LG Display Co., Ltd.

Inventor： Minsuk Kong ,  Soyoung Kim ,  Moonsoo Kang ,  Jaeho Yoon

IPC: H01L27/146 ,  G01T1/20

Abstract: A thin film transistor array substrate for a digital X-ray detector device includes a base substrate where a driving area and a non-driving area are defined; at least one readout circuit pad disposed in the non-driving area and electrically connected to the drive area; at least one readout circuit pad connection line electrically connecting the driving area to the at least one readout circuit pad; and at least one electrostatic induction line electrically connected to the at least one readout circuit pad connection line, wherein the at least one electrostatic induction line has a greater resistance than a resistance of the at least one readout circuit pad connection line.