Thin film transistor substrate, method of fabricating the same and flat display having the same
    1.
    发明授权
    Thin film transistor substrate, method of fabricating the same and flat display having the same 有权
    薄膜晶体管基板,其制造方法和具有该薄膜晶体管基板的平面显示器

    公开(公告)号:US08796690B2

    公开(公告)日:2014-08-05

    申请号:US13804560

    申请日:2013-03-14

    Abstract: A thin film transistor substrate and a method for fabricating the same are disclosed. A thin film transistor substrate includes a substrate comprising a plurality of grooves having different depths, respectively, to have a multi-step structure; gate and data lines alternatively crossed in the grooves to form a plurality of pixel areas; thin film transistors formed in the grooves of the substrate to be formed in cross portion of the gate and data lines, wherein active layers of the thin transistors are formed along the gate lines and gate electrodes, the active layers separated from active layers of neighboring pixel areas with the data line located there between.

    Abstract translation: 公开了一种薄膜晶体管基板及其制造方法。 薄膜晶体管基板包括分别具有不同深度的多个凹槽的基板,以具有多步结构; 栅极和数据线在沟槽中交替交叉以形成多个像素区域; 形成在要形成在栅极和数据线的交叉部分中的衬底的凹槽中的薄膜晶体管,其中薄晶体管的有源层沿着栅极线和栅电极形成,有源层与相邻像素的有源层分离 数据线位于其间的区域。

    Thin Film Transistor Substrate, Method of Fabricating the Same and Flat Display Having the Same
    3.
    发明申请
    Thin Film Transistor Substrate, Method of Fabricating the Same and Flat Display Having the Same 有权
    薄膜晶体管基板,其制造方法和具有相同的平板显示器

    公开(公告)号:US20130292678A1

    公开(公告)日:2013-11-07

    申请号:US13804560

    申请日:2013-03-14

    Abstract: A thin film transistor substrate and a method for fabricating the same are disclosed. A thin film transistor substrate includes a substrate comprising a plurality of grooves having different depths, respectively, to have a multi-step structure; gate and data lines alternatively crossed in the grooves to form a plurality of pixel areas; thin film transistors formed in the grooves of the substrate to be formed in cross portion of the gate and data lines, wherein active layers of the thin transistors are formed along the gate lines and gate electrodes, the active layers separated from active layers of neighboring pixel areas with the data line located there between.

    Abstract translation: 公开了一种薄膜晶体管基板及其制造方法。 薄膜晶体管基板包括分别具有不同深度的多个凹槽的基板,以具有多步结构; 栅极和数据线在沟槽中交替交叉以形成多个像素区域; 形成在要形成在栅极和数据线的交叉部分中的衬底的凹槽中的薄膜晶体管,其中薄晶体管的有源层沿着栅极线和栅电极形成,有源层与相邻像素的有源层分离 数据线位于其间的区域。

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