Abstract:
A columnar light emitting device is provided. The columnar light emitting device includes an upper transparent electrode layer, a lower transparent electrode layer disposed to be separated from the upper transparent electrode layer, a columnar light emitting structure pattern-formed between the upper transparent electrode layer and the lower transparent electrode layer, a fluorescent part formed between a plurality of the columnar light emitting structures, a P-type electrode pad formed on the upper transparent electrode layer, and an N-type electrode pad formed under the lower transparent electrode layer. The columnar light emitting structure includes a U-GaN layer, an N-type semiconductor layer, an emission layer, and a P-type semiconductor layer.
Abstract:
A columnar light emitting device is provided. The columnar light emitting device includes an upper transparent electrode layer, a lower transparent electrode layer disposed to be separated from the upper transparent electrode layer, a columnar light emitting structure pattern-formed between the upper transparent electrode layer and the lower transparent electrode layer, a fluorescent part formed between a plurality of the columnar light emitting structures, a P-type electrode pad formed on the upper transparent electrode layer, and an N-type electrode pad formed under the lower transparent electrode layer. The columnar light emitting structure includes a U-GaN layer, an N-type semiconductor layer, an emission layer, and a P-type semiconductor layer.