公开(公告)号：US20140357008A1

公开(公告)日：2014-12-04

申请号：US14289172

申请日：2014-05-28

Applicant: LG ELECTRONICS INC.

Inventor： Jinsung KIM ,  Daeyong LEE

IPC: H01L31/18

CPC classification number: H01L31/1804 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/266 ,  H01L31/02363 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of manufacturing a solar cell is disclosed. The method includes forming a doping region including first and second portions having different doping concentrations by ion-implanting a dopant into a semiconductor substrate and forming an electrode connected to the doping region. In the forming of the doping region, the first and second portions are simultaneously formed by the same process using a mask that is disposed at a distance from the semiconductor substrate.

Abstract translation: 公开了一种制造太阳能电池的方法。 该方法包括通过将掺杂剂离子注入到半导体衬底中并形成连接到掺杂区的电极来形成包括具有不同掺杂浓度的第一和第二部分的掺杂区域。 在形成掺杂区域时，通过使用与半导体衬底相距一定距离的掩模的相同工艺同时形成第一和第二部分。

公开(公告)号：US20150090323A1

公开(公告)日：2015-04-02

申请号：US14478935

申请日：2014-09-05

Applicant: LG ELECTRONICS INC.

Inventor： Jeongkyu KIM ,  Sunghyun HWANG ,  Daeyong LEE

IPC: H01L31/0352

Abstract: Discussed is a solar cell including a semiconductor substrate comprising a base region, an emitter region having a conductive type opposite to that of the base region, and a back surface field region having the same conductive type as the base region and a higher doping concentration than the base region, and a first electrode and a second electrode respectively connected to the emitter region and the back surface field region, wherein the base region has a specific resistance of 0.3 Ωcm to 2.5 Ωcm.

Abstract translation: 讨论了包括半导体衬底的太阳能电池，该半导体衬底包括基极区域，具有与基极区域相反的导电类型的发射极区域和与基极区域具有相同导电类型的背表面场区域，并且掺杂浓度高于 所述基极区域以及分别连接到所述发射极区域和所述背面场区域的第一电极和第二电极，其中所述基极区域的电阻率为0.3Ω·cm·cm〜2.5Ω·cm·cm。

公开(公告)号：US20140352770A1

公开(公告)日：2014-12-04

申请号：US14289150

申请日：2014-05-28

Applicant: LG ELECTRONICS INC.

Inventor： Sunghyun HWANG ,  Daeyong LEE ,  Jinsung KIM

IPC: H01L31/065 ,  H01L31/18 ,  H01L31/068

CPC classification number: H01L31/068 ,  H01L31/022433 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Discussed is a solar cell including a semiconductor substrate, a first conductive type region formed on a surface of the semiconductor substrate, a second conductive type region formed on the other surface of the semiconductor substrate, the second conductive type region being spaced from an edge of the semiconductor substrate and having a conductive type different from that of the first conductive type region, an isolation portion formed at a perimeter of the second conductive type region on the other surface of the semiconductor substrate, a first electrode connected to the first conductive type region, and a second electrode connected to the second conductive type region, wherein the second conductive type region has a boundary portion in a part adjacent to the isolation portion, and in which a doping concentration or a junction depth varies over a width of the boundary portion.

Abstract translation: 讨论了包括半导体衬底的太阳能电池，形成在半导体衬底的表面上的第一导电类型区域，形成在半导体衬底的另一个表面上的第二导电类型区域，第二导电类型区域与 所述半导体衬底具有不同于所述第一导电类型区域的导电类型的绝缘部分，形成在所述半导体衬底的另一个表面上的所述第二导电类型区域的周边处的隔离部分，连接到所述第一导电类型区域的第一电极 以及连接到第二导电类型区域的第二电极，其中第二导电类型区域在与隔离部分相邻的部分中具有边界部分，并且其中掺杂浓度或结深度在边界部分的宽度上变化 。

公开(公告)号：US20220190189A1

公开(公告)日：2022-06-16

申请号：US17603108

申请日：2020-04-08

Applicant: LG ELECTRONICS INC.

Inventor： Daeyong LEE ,  Jinsung KIM

IPC: H01L31/18

Abstract: A manufacturing method of an embodiment according to the present invention may comprise the steps of: locating a solar cell, including a semiconductor substrate and a semiconductor layer which has an absorption coefficient higher than that of the semiconductor substrate and is formed on at least one side of the semiconductor substrate, such that the semiconductor layer is oriented toward a laser; emitting a laser beam toward the semiconductor layer to form a groove on the solar cell; and dividing the solar cell along the groove into a plurality of pieces.

公开(公告)号：US20160225935A1

公开(公告)日：2016-08-04

申请号：US15097073

申请日：2016-04-12

Applicant: LG ELECTRONICS INC.

Inventor： Hyunjung PARK ,  Daeyong LEE ,  Youngho CHOE ,  Dongho HAN

IPC: H01L31/18

CPC classification number: H01L31/18 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for manufacturing a solar cell, the method comprising: forming an emitter region that forms a p-n junction with a semiconductor substrate of a first conductive type; forming a passivation layer on the semiconductor substrate; forming a dopant layer containing impurities of the first conductive type on the passivation layer; and locally forming a back surface field region at the semiconductor substrate by irradiating laser beams onto the semiconductor substrate to diffuse the impurities of the first conductive type into the semiconductor substrate.

Abstract translation: 一种制造太阳能电池的方法，所述方法包括：形成与第一导电类型的半导体衬底形成p-n结的发射极区域; 在所述半导体衬底上形成钝化层; 在所述钝化层上形成含有所述第一导电类型的杂质的掺杂剂层; 并且通过将半导体衬底上的激光照射到半导体衬底上来将第一导电类型的杂质扩散到半导体衬底中，在半导体衬底上局部形成背面场区域。

公开(公告)号：US20170047459A1

公开(公告)日：2017-02-16

申请号：US15235955

申请日：2016-08-12

Applicant: LG ELECTRONICS INC.

Inventor： Mann YI ,  Daeyong LEE ,  Jeongkyu KIM ,  Junyong AHN

IPC: H01L31/0392 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/0224 ,  H01L31/068

CPC classification number: H01L31/03921 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/028 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell and a method for manufacturing the same are disclosed. The method for manufacturing the solar cell includes injecting impurities of a second conductive type opposite a first conductive type into an entire first surface of a semiconductor substrate containing impurities of the first conductive type, the semiconductor substrate having the first surface, a side surface, and a second surface opposite the first surface, forming a doping barrier layer on the entire first surface and the entire side surface of the semiconductor substrate, and at an edge portion of the second surface of the semiconductor substrate, injecting the impurities of the first conductive type into the second surface of the semiconductor substrate at which the doping barrier layer is not formed, at a higher concentration than the semiconductor substrate, performing a thermal process on the semiconductor substrate to simultaneously form an emitter region of the second conductive type at the entire first and side surfaces of the semiconductor substrate and a back surface field region of the first conductive type at the second surface of the semiconductor substrate, and removing the doping barrier layer.

Abstract translation: 公开了一种太阳能电池及其制造方法。 制造太阳能电池的方法包括将含有第一导电类型的第二导电类型的杂质注入包含第一导电类型的杂质的半导体衬底的整个第一表面，具有第一表面的半导体衬底，侧表面和 与第一表面相对的第二表面，在半导体衬底的整个第一表面和整个侧表面上形成掺杂阻挡层，并且在半导体衬底的第二表面的边缘部分处，注入第一导电类型的杂质 在没有形成掺杂阻挡层的半导体衬底的第二表面中，以比半导体衬底更高的浓度进行热处理，在半导体衬底上进行热处理，同时在整个第一衬底上形成第二导电类型的发射极区 和半导体衬底的侧表面和背面fie 在该半导体衬底的第二表面处的第一导电类型的区域，以及去除该掺杂阻挡层。

公开(公告)号：US20170012148A1

公开(公告)日：2017-01-12

申请号：US15204447

申请日：2016-07-07

Applicant: LG ELECTRONICS INC.

Inventor： Daeyong LEE ,  Junyong AHN ,  Mann YI ,  Jeongkyu KIM

IPC: H01L31/0352 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/0216 ,  H01L31/0224

CPC classification number: H01L31/03529 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/0684 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: Disclosed is method of manufacturing a solar cell including forming a barrier film over at least one surface of a semiconductor substrate or a semiconductor layer, forming a first conductive area on the at least one surface of the semiconductor substrate or the semiconductor layer via ion implantation of a first conductive dopant through the barrier film, and removing the barrier film.

Abstract translation: 公开了一种制造太阳能电池的方法，包括在半导体衬底或半导体层的至少一个表面上形成阻挡膜，通过离子注入在半导体衬底或半导体层的至少一个表面上形成第一导电区域 通过阻挡膜的第一导电掺杂剂，并去除阻挡膜。

公开(公告)号：US20160204300A1

公开(公告)日：2016-07-14

申请号：US15076111

申请日：2016-03-21

Applicant: LG ELECTRONICS INC.

Inventor： Daeyong LEE ,  Jonghwan KIM ,  Hyungjin KWON

IPC: H01L31/18

CPC classification number: H01L31/1864 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/068 ,  Y02E10/52 ,  Y02E10/547

Abstract: A solar cell and a method of manufacturing the same are disclosed. The solar cell includes a substrate of a first conductive type; an emitter layer of a second conductive type opposite the first conductive type on the substrate; a first electrode electrically connected to the emitter layer; a passivation layer on the substrate; a second electrode conductive layer on the passivation layer, the second electrode conductive layer including at least one second electrode electrically connected to the substrate through the passivation layer; and a second electrode current collector electrically connected to the second electrode conductive layer.

Abstract translation: 公开了一种太阳能电池及其制造方法。 太阳能电池包括第一导电类型的衬底; 在所述衬底上的与所述第一导电类型相反的第二导电类型的发射极层; 电连接到发射极层的第一电极; 衬底上的钝化层; 所述钝化层上的第二电极导电层，所述第二电极导电层包括通过所述钝化层电连接到所述衬底的至少一个第二电极; 以及与第二电极导电层电连接的第二电极集电体。