公开(公告)号：US20020055198A1

公开(公告)日：2002-05-09

申请号：US10026809

申请日：2001-12-27

Applicant: LG Electronics Inc.

Inventor： Wook Kim ,  Tae Kyung Yoo

IPC: H01L021/00

CPC classification number: H01S5/02 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/10 ,  H01S5/0205 ,  H01S5/32341 ,  H01S2304/12

Abstract: A semiconductor optical device and a method for fabricating the same. The semiconductor optical device comprises a substrate, a semiconductor electrode layer of a first conductive type formed on the substrate and having a groove formed to a desired depth therein, a semiconductor layer of the first conductive type formed from side walls of the groove up to a part of the semiconductor electrode layer of the first conductive type on the periphery of the groove, a cladding layer of the first conductive type, an active layer of the first conductive type, a cladding layer of a second conductive type and a semiconductor electrode layer of the second conductive type sequentially formed on the semiconductor layer of the first conductive type, and electrodes of the first and second conductive types formed respectively on the semiconductor electrode layers of the first and second conductive types.

Abstract translation: 一种半导体光学器件及其制造方法。 半导体光学器件包括衬底，形成在衬底上的第一导电类型的半导体电极层，并且具有形成在其中所需深度的沟槽;第一导电类型的半导体层由沟槽的侧壁形成直到 第一导电类型的包覆层，第一导电类型的有源层，第二导电类型的包层和半导体电极层的半导体类型的半导体电极层的一部分， 顺序地形成在第一导电类型的半导体层上的第二导电类型以及分别形成在第一和第二导电类型的半导体电极层上的第一和第二导电类型的电极。