公开(公告)号：US20190355875A1

公开(公告)日：2019-11-21

申请号：US16474197

申请日：2017-12-27

Applicant: LG INNOTEK CO., LTD.

Inventor： Woong Sun YUM ,  Hyun Ju KIM ,  Jin Soo PARK ,  Seung Il LEE ,  Jae Young IM

IPC: H01L33/38 ,  H01L33/30 ,  H01L33/40

Abstract: An embodiment discloses a semiconductor device comprising: a light-emitting structure having a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode disposed on the first conductive semiconductor layer; a second electrode disposed below the second conductive semiconductor layer; and a current blocking layer disposed between the second conductive semiconductor layer and the second electrode, wherein the first conductive semiconductor layer includes a first region in which the first electrode is disposed and a second region, the thickness of which is less than the thickness of the first region, and the current blocking layer is disposed in a region corresponding to the first region in the thickness direction.

公开(公告)号：US20170125638A1

公开(公告)日：2017-05-04

申请号：US15301166

申请日：2015-04-02

Applicant: LG INNOTEK CO., LTD.

Inventor： Woong Sun YUM ,  Ji Hyun KOO ,  Hyun Ju KIM ,  Kyung Wook PARK ,  Sung Ho CHOO

IPC: H01L33/40 ,  H01L33/32 ,  H01L33/22 ,  H01L33/62 ,  H01L33/00 ,  H01L33/38

CPC classification number: H01L33/405 ,  H01L33/0008 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A light-emitting device discloses a light emitting structure layer including an active layer between first and second conductive semiconductor layers, a first electrode electrically connected to the first conductive semiconductor layer, a contact layer disposed under the second conductive semiconductor layer, a reflective layer disposed under the contact layer, a capping layer disposed under the reflective layer, and a conductive supporting member disposed under the capping layer. The reflective layer comprises a thickness that is greater than the thickness of the second conductive semiconductor layer and 90 or more times greater than the thickness of the contact layer.