公开(公告)号：US20190355875A1

公开(公告)日：2019-11-21

申请号：US16474197

申请日：2017-12-27

Applicant: LG INNOTEK CO., LTD.

Inventor： Woong Sun YUM ,  Hyun Ju KIM ,  Jin Soo PARK ,  Seung Il LEE ,  Jae Young IM

IPC: H01L33/38 ,  H01L33/30 ,  H01L33/40

Abstract: An embodiment discloses a semiconductor device comprising: a light-emitting structure having a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode disposed on the first conductive semiconductor layer; a second electrode disposed below the second conductive semiconductor layer; and a current blocking layer disposed between the second conductive semiconductor layer and the second electrode, wherein the first conductive semiconductor layer includes a first region in which the first electrode is disposed and a second region, the thickness of which is less than the thickness of the first region, and the current blocking layer is disposed in a region corresponding to the first region in the thickness direction.

公开(公告)号：US20180240940A1

公开(公告)日：2018-08-23

申请号：US15752926

申请日：2016-08-18

Applicant: LG INNOTEK CO., LTD.

Inventor： Dae Hee LEE ,  Young Hoon KIM ,  Jung Hwan SON ,  Seung Il LEE ,  Jung Wook LEE ,  Jae Young IM

IPC: H01L33/40 ,  H01L33/62 ,  H01L33/38 ,  H01L33/26

CPC classification number: H01L33/405 ,  H01L33/20 ,  H01L33/26 ,  H01L33/36 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/4809 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: Disclosed in an embodiment is a light emitting device comprising: a light-emitting structure having a first semiconductor layer, an active layer under the first semiconductor layer, and a second semiconductor layer under the active layer; a first contact layer disposed under the light-emitting structure; a reflective layer disposed under the first contact layer; a first electrode layer including a capping layer disposed under the reflective layer; a second electrode layer electrically connected with the first semiconductor layer; a protective layer disposed at the outer peripheral portion between the capping layer and the light-emitting structure; a barrier layer at an outer side of the reflective layer and made of a metal different from that of the reflective layer; and a support member disposed under the capping layer.a