公开(公告)号：US20180323341A1

公开(公告)日：2018-11-08

申请号：US15772907

申请日：2016-11-03

Applicant: LG INNOTEK CO., LTD.

Inventor： Ji Hyun KOO ,  Dae Hee LEE ,  Jung Wook LEE

IPC: H01L33/14 ,  H01L33/22 ,  H01L33/38 ,  H01L33/44 ,  H01L33/48 ,  H01L33/40

Abstract: A semiconductor device according to an embodiment includes: a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, and a plurality of recesses exposing a lower portion of the first conductive semiconductor layer; at least one pad arranged outside the light emitting structure and arranged to be adjacent to at least one edge; and a plurality of insulation patterns arranged in the recesses and extending to a lower surface of the light emitting structure, in which widths of the plurality of insulation patterns are reduced as the insulation patterns become further away from the pad. The semiconductor device according to the embodiment may prevent a current from being focused on a recess area adjacent to the pad.

公开(公告)号：US20170125638A1

公开(公告)日：2017-05-04

申请号：US15301166

申请日：2015-04-02

Applicant: LG INNOTEK CO., LTD.

Inventor： Woong Sun YUM ,  Ji Hyun KOO ,  Hyun Ju KIM ,  Kyung Wook PARK ,  Sung Ho CHOO

IPC: H01L33/40 ,  H01L33/32 ,  H01L33/22 ,  H01L33/62 ,  H01L33/00 ,  H01L33/38

CPC classification number: H01L33/405 ,  H01L33/0008 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A light-emitting device discloses a light emitting structure layer including an active layer between first and second conductive semiconductor layers, a first electrode electrically connected to the first conductive semiconductor layer, a contact layer disposed under the second conductive semiconductor layer, a reflective layer disposed under the contact layer, a capping layer disposed under the reflective layer, and a conductive supporting member disposed under the capping layer. The reflective layer comprises a thickness that is greater than the thickness of the second conductive semiconductor layer and 90 or more times greater than the thickness of the contact layer.