公开(公告)号：US20190355875A1

公开(公告)日：2019-11-21

申请号：US16474197

申请日：2017-12-27

Applicant: LG INNOTEK CO., LTD.

Inventor： Woong Sun YUM ,  Hyun Ju KIM ,  Jin Soo PARK ,  Seung Il LEE ,  Jae Young IM

IPC: H01L33/38 ,  H01L33/30 ,  H01L33/40

Abstract: An embodiment discloses a semiconductor device comprising: a light-emitting structure having a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode disposed on the first conductive semiconductor layer; a second electrode disposed below the second conductive semiconductor layer; and a current blocking layer disposed between the second conductive semiconductor layer and the second electrode, wherein the first conductive semiconductor layer includes a first region in which the first electrode is disposed and a second region, the thickness of which is less than the thickness of the first region, and the current blocking layer is disposed in a region corresponding to the first region in the thickness direction.

公开(公告)号：US20190198711A1

公开(公告)日：2019-06-27

申请号：US16231776

申请日：2018-12-24

Applicant: LG INNOTEK CO., LTD.

Inventor： Hyun Ju KIM ,  Hyung Jo PARK ,  Hwan Kyo KIM

IPC: H01L33/10 ,  H01L33/20 ,  H01L33/62 ,  H01L33/36 ,  H01L23/00

CPC classification number: H01L33/10 ,  H01L24/05 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/20 ,  H01L33/36 ,  H01L33/382 ,  H01L33/387 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/12041 ,  H01L2933/0066

Abstract: Exemplary embodiments provide a semiconductor device including: a semiconductor structure which includes a first-conductive-type semiconductor layer, a second-conductive-type semiconductor layer, and an active layer disposed between the first-conductive-type semiconductor layer and the second-conductive-type semiconductor layer, wherein the semiconductor structure has a first recess passing through the second-conductive-type semiconductor layer, the active layer and a first portion of the first-conductive-type semiconductor layer; and a plurality of second recesses passing through the second-conductive-type semiconductor layer, the active layer and a second portion of the first-conductive-type semiconductor layer, wherein the first recess is disposed along an outer surface of the semiconductor structure, wherein the plurality of second recesses are surrounded by the first recess.

公开(公告)号：US20170125638A1

公开(公告)日：2017-05-04

申请号：US15301166

申请日：2015-04-02

Applicant: LG INNOTEK CO., LTD.

Inventor： Woong Sun YUM ,  Ji Hyun KOO ,  Hyun Ju KIM ,  Kyung Wook PARK ,  Sung Ho CHOO

IPC: H01L33/40 ,  H01L33/32 ,  H01L33/22 ,  H01L33/62 ,  H01L33/00 ,  H01L33/38

CPC classification number: H01L33/405 ,  H01L33/0008 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/32 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A light-emitting device discloses a light emitting structure layer including an active layer between first and second conductive semiconductor layers, a first electrode electrically connected to the first conductive semiconductor layer, a contact layer disposed under the second conductive semiconductor layer, a reflective layer disposed under the contact layer, a capping layer disposed under the reflective layer, and a conductive supporting member disposed under the capping layer. The reflective layer comprises a thickness that is greater than the thickness of the second conductive semiconductor layer and 90 or more times greater than the thickness of the contact layer.