公开(公告)号：US20040137671A1

公开(公告)日：2004-07-15

申请号：US10746019

申请日：2003-12-23

Applicant: LG. PHILIPS LCD CO., LTD.

Inventor： Young-Joo Kim

IPC: H01L021/00 ,  C30B001/00 ,  H01L021/324 ,  H01L021/477 ,  H01L021/84

CPC classification number: H01L21/0268 ,  B23K26/066 ,  H01L21/2026 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

Abstract: Sequential lateral solidification (SLS) crystallization of amorphous silicon uses a mask having light transmitting portions. A method of crystallizing an amorphous silicon film using the mask includes forming an amorphous silicon layer over a substrate; forming a metal layer on the amorphous silicon layer; patterning the metal layer to expose a portion of the amorphous silicon layer in a TFT area where a thin film transistor is formed; disposing the mask over the portion of the amorphous silicon layer exposed by the metal layer; and irradiating the portion of the amorphous silicon layer exposed by the metal layer using a laser beam that passes through the light transmitting portions of the mask such that the portion of the amorphous silicon layer is crystallized and laterally growing grains are formed in grain regions.

Abstract translation: 非晶硅的顺序横向固化（SLS）结晶使用具有透光部分的掩模。 使用掩模使非晶硅膜结晶的方法包括在基板上形成非晶硅层; 在所述非晶硅层上形成金属层; 图案化金属层以在形成薄膜晶体管的TFT区域中露出非晶硅层的一部分; 将掩模设置在由金属层暴露的非晶硅层的部分上; 并且使用穿过掩模的透光部分的激光束照射由金属层暴露的非晶硅层的部分，使得非晶硅层的部分结晶，并且在颗粒区域中形成横向生长的晶粒。

公开(公告)号：US20040106244A1

公开(公告)日：2004-06-03

申请号：US10717676

申请日：2003-11-21

Applicant: LG. Philips LCD Co., Ltd.

Inventor： Young-Joo Kim

IPC: H01L021/00 ,  H01L021/324 ,  H01L021/84 ,  H01L029/76 ,  H01L031/036

CPC classification number: H01L21/02675 ,  C30B13/00 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L29/6675 ,  H01L29/78672

Abstract: A method of crystallizing amorphous silicon includes forming an amorphous silicon film over a substrate, crystallizing the amorphous silicon film to form a polycrystalline silicon film using a sequential lateral solidification crystallization method, and performing a surface treatment to the polycrystalline silicon film, wherein the sequential lateral solidification crystallization method includes at least a first application of a first laser beam having a first energy density that completely melts a first uncrystallized portion of the amorphous silicon film and melts a first crystallized portion of the amorphous silicon film, and the surface treatment includes application of a second laser beam having a second energy density that partially melts an entire surface of the polycrystalline silicon film.

Abstract translation: 结晶非晶硅的方法包括在衬底上形成非晶硅膜，使用顺序横向固化结晶法结晶非晶硅膜以形成多晶硅膜，并对多晶硅膜进行表面处理，其中顺序侧面 固化结晶方法至少包括具有完全熔化非晶硅膜的第一非结晶部分并熔化非晶硅膜的第一结晶部分的第一能量密度的第一激光束的第一次施加，并且表面处理包括施加 第二激光束具有部分地熔化多晶硅膜的整个表面的第二能量密度。