公开(公告)号：US20160148813A1

公开(公告)日：2016-05-26

申请号：US14553439

申请日：2014-11-25

Applicant: Lam Research Corporation

Inventor： James Rogers ,  Zhigang Chen ,  John Holland ,  Kyle Spaulding

IPC: H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/3244

Abstract: A method of uniformly processing an upper surface of a semiconductor substrate in a plasma processing apparatus including a showerhead including gas outlets in discrete sectors of a process exposed surface thereof comprises processing the upper surface of the semiconductor substrate by flowing gas through a first discrete sector of the showerhead while preventing gas from flowing through an adjacent discrete sector of the showerhead, and processing the upper surface of the semiconductor substrate by flowing gas through a second discrete sector of the showerhead while preventing gas from flowing through an adjacent discrete sector of the showerhead. The flow of gas through the first discrete sector and the second discrete sector of the showerhead is time averaged such that the upper surface of the semiconductor substrate is uniformly processed.

Abstract translation: 一种在等离子体处理装置中均匀地加工半导体衬底的上表面的方法，其包括在工艺暴露表面的离散扇区中包括气体出口的喷头，包括通过使气体流过第一离散扇区 所述喷头同时防止气体流过所述淋浴喷头的相邻离散扇区，以及通过使气体流过所述喷头的第二分立扇区，同时防止气体流过所述淋浴喷头的相邻离散扇区来处理所述半导体基板的上表面。 通过第一离散扇区和喷头的第二离散扇区的气体流动被平均化，使得半导体衬底的上表面被均匀地加工。

公开(公告)号：US20200161097A1

公开(公告)日：2020-05-21

申请号：US16750001

申请日：2020-01-23

Applicant: Lam Research Corporation

Inventor： Sang Ki Nam ,  Rajinder Dhindsa ,  James Rogers

IPC: H01J37/32 ,  H01L21/683

Abstract: A chuck assembly for plasma processing, including: an electrostatic chuck having a substrate support surface on a first side; a facility plate coupled to the electrostatic chuck on a second side; a RF feed defined by a first portion contacting a periphery of the facility plate and a second portion coupled to the first portion, the second portion extending away from the chuck assembly, the first portion being a bowl-shaped section, wherein the second portion connects to the first portion at an opening defined in the bowl-shaped section; wherein the first portion of the RF feed contacts the periphery of the facility plate at a circumference circumference having a radius greater than one-half of a radius of the facility plate, the radius of the circumference being less than the radius of the facility plate; a grounded shield disposed below and surrounding at least a portion of the bowl-shaped section.

公开(公告)号：US09793097B2

公开(公告)日：2017-10-17

申请号：US14810279

申请日：2015-07-27

Applicant: Lam Research Corporation

Inventor： Kyle Spaulding ,  James Rogers

IPC: C30B25/14 ,  C30B25/16 ,  C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  H01L21/67 ,  H01L21/66

CPC classification number: H01J37/32834 ,  C23C16/4412 ,  C23C16/45589 ,  C30B25/14 ,  C30B25/165 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32816 ,  H01J2237/16 ,  H01L22/26

Abstract: An apparatus for processing a substrate is provided. A processing chamber is provided. A substrate support for supporting the substrate is within the processing chamber. A gas inlet provides gas into the processing chamber. An exhaust pressure system exhausts gas around a periphery of the substrate, wherein the periphery around the substrate is divided into at least three parts, wherein the exhaust pressure system controls exhaust pressure to control a velocity of the gas over the substrate, wherein the exhaust pressure system provides at independent exhaust pressure control for each part of the periphery for the at least three parts.

公开(公告)号：US11127571B2

公开(公告)日：2021-09-21

申请号：US16750001

申请日：2020-01-23

Applicant: Lam Research Corporation

Inventor： Sang Ki Nam ,  Rajinder Dhindsa ,  James Rogers

IPC: H01J37/32 ,  H01L21/683

Abstract: A chuck assembly for plasma processing, including: an electrostatic chuck having a substrate support surface on a first side; a facility plate coupled to the electrostatic chuck on a second side; a RF feed defined by a first portion contacting a periphery of the facility plate and a second portion coupled to the first portion, the second portion extending away from the chuck assembly, the first portion being a bowl-shaped section, wherein the second portion connects to the first portion at an opening defined in the bowl-shaped section; wherein the first portion of the RF feed contacts the periphery of the facility plate at a circumference circumference having a radius greater than one-half of a radius of the facility plate, the radius of the circumference being less than the radius of the facility plate; a grounded shield disposed below and surrounding at least a portion of the bowl-shaped section.

公开(公告)号：US20170032943A1

公开(公告)日：2017-02-02

申请号：US14810279

申请日：2015-07-27

Applicant: Lam Research Corporation

Inventor： Kyle Spaulding ,  James Rogers

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/67

CPC classification number: H01J37/32834 ,  C23C16/4412 ,  C23C16/45589 ,  C30B25/14 ,  C30B25/165 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32816 ,  H01J2237/16 ,  H01L22/26

Abstract: An apparatus for processing a substrate is provided. A processing chamber is provided. A substrate support for supporting the substrate is within the processing chamber. A gas inlet provides gas into the processing chamber. An exhaust pressure system exhausts gas around a periphery of the substrate, wherein the periphery around the substrate is divided into at least three parts, wherein the exhaust pressure system controls exhaust pressure to control a velocity of the gas over the substrate, wherein the exhaust pressure system provides at independent exhaust pressure control for each part of the periphery for the at least three parts.

Abstract translation: 提供了一种用于处理衬底的设备。 提供处理室。 用于支撑衬底的衬底支撑件在处理室内。 气体入口将气体提供到处理室中。 排气压力系统围绕基板的周边排出气体，其中基板周围的周边被分成至少三个部分，其中排气压力系统控制排气压力以控制衬底上的气体的速度，其中排气压力 系统为至少三个部分的外围的每个部分提供独立的排气压力控制。