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公开(公告)号：US11935730B2
公开(公告)日：2024-03-19
申请号：US17628862
申请日：2020-07-22
发明人： Eric Hudson , Scott Briggs , John Holland , Alexei Marakhtanov , Felix Leib Kozakevich , Kenneth Lucchesi
IPC分类号： H01J37/32
CPC分类号： H01J37/32862 , H01J37/32183 , H01J37/3244 , H01J37/32642 , H01J37/32715 , H01J2237/332 , H01J2237/334
摘要： Systems and methods for cleaning an edge ring pocket are described herein. One of the methods includes providing one or more process gases to a plasma chamber, supplying a low frequency (LF) radio frequency (RF) power to an edge ring that is located adjacent to a chuck of the plasma chamber. The LF RF power is supplied while the one or more process gases are supplied to the plasma chamber to maintain plasma within the plasma chamber. The supply of the LF RF power increases energy of plasma ions near the edge ring pocket to remove residue in the edge ring pocket. The LF RF power is supplied during the time period in which a substrate is not being processed within the plasma chamber.
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公开(公告)号：US11887819B2
公开(公告)日：2024-01-30
申请号：US17960576
申请日：2022-10-05
发明人： Jon McChesney , Saravanapriyan Sriraman , Richard A. Marsh , Alexander Miller Paterson , John Holland
IPC分类号： H01J37/32
CPC分类号： H01J37/32522 , H01J37/32082 , H01J37/32119 , H01J37/32238
摘要： In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.
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公开(公告)号：US20220254616A1
公开(公告)日：2022-08-11
申请号：US17628862
申请日：2020-07-22
发明人： Eric Hudson , Scott Briggs , John Holland , Alexei Marakhtanov , Felix Leib Kozakevich , Kenneth Lucchesi
IPC分类号： H01J37/32
摘要： Systems and methods for cleaning an edge ring pocket are described herein. One of the methods includes providing one or more process gases to a plasma chamber, supplying a low frequency (LF) radio frequency (RF) power to an edge ring that is located adjacent to a chuck of the plasma chamber. The LF RF power is supplied while the one or more process gases are supplied to the plasma chamber to maintain plasma within the plasma chamber. The supply of the LF RF power increases energy of plasma ions near the edge ring pocket to remove residue in the edge ring pocket. The LF RF power is supplied during the time period in which a substrate is not being processed within the plasma chamber.
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公开(公告)号：US11335539B2
公开(公告)日：2022-05-17
申请号：US17276798
申请日：2018-09-28
IPC分类号： H01J37/32
摘要： A method for optimizing delivery of power to a plasma chamber is described. The method includes dividing each cycle of a low frequency (LF) radio frequency generator (RFG) into multiple time intervals. During each of the time intervals, a frequency offset of a high frequency (HF) RFG is generated for which the delivery of power is maximized. The frequency offsets provide a substantially inverse relationship compared to a voltage signal of the LF RFG for each cycle of the voltage signal. The frequency offsets for the time intervals are multiples of the low frequency. The substantially inverse relationship facilitates an increase in the delivery of power to the electrode. A total range of the frequency offsets from a reference HF frequency over the LF RF cycle depends on a power ratio of power that is supplied by the LF RFG and power that is supplied by the HF RFG.
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5.再颁专利公开(公告)号：USRE47275E1
公开(公告)日：2019-03-05
申请号：US14883982
申请日：2015-10-15
摘要： A semiconductor substrate support for use in a plasma processing apparatus comprises a chuck body having a plenum and three radially extending bores extending between the plenum and an outer periphery of the chuck body, wherein the chuck body is sized to support a semiconductor substrate having a diameter of at least 450 mm. The semiconductor substrate support further comprises three tubular support arms which include a first section extending radially outward from the outer periphery of the chuck body, and a second section extending vertically from the first section. The tubular support arms provide a passage therethrough which communicates with a respective bore in the chuck body. The second section of each tubular support arm is configured to engage with a respective actuation mechanism outside the chamber operable to effect vertical translation and planarization of the chuck body in the interior of a plasma processing chamber.
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公开(公告)号：US09673058B1
公开(公告)日：2017-06-06
申请号：US15069022
申请日：2016-03-14
发明人： Scott Briggs , Eric Hudson , Leonid Belau , John Holland , Mark Wilcoxson
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01L21/31144
摘要： A method for etching features in a silicon oxide containing etch layer disposed below a patterned mask in a chamber is provided. An etch gas comprising a tungsten containing gas is flowed into the chamber. The etch gas comprising the tungsten containing gas is formed into a plasma. The silicon oxide etch layer is exposed to the plasma formed from the etch gas comprising the tungsten containing gas. Features are etched in the silicon oxide etch layer while exposed to the plasma formed from the etch gas comprising the tungsten containing gas.
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公开(公告)号：US12131886B2
公开(公告)日：2024-10-29
申请号：US18011830
申请日：2021-06-28
IPC分类号： H01J37/32
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32119 , H01J2237/3348
摘要： A first radiofrequency signal generator is set to generate a low frequency signal. A second radiofrequency signal generator is set to generate a high frequency signal. An impedance matching system has a first input connected to an output of the first radiofrequency signal generator and a second input connected to an output of the second radiofrequency signal generator. The impedance matching system controls impedances at the outputs of the first and second radiofrequency signal generators. An output of the impedance matching system is connected to a radiofrequency supply input of a plasma processing system. A control module monitors reflected voltage at the output of the second radiofrequency signal generator. The control module determines when the reflected voltage indicates a change in impedance along a transmission path of the high frequency signal that is indicative of a particular process condition and/or event within the plasma processing system.
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公开(公告)号：US20240266151A1
公开(公告)日：2024-08-08
申请号：US18617587
申请日：2024-03-26
发明人： Michael C. Kellogg , Adam Mace , Alexei Marakhtanov , John Holland , Zhigang Chen , Felix Kozakevich , Alexander Matyushkin
IPC分类号： H01J37/32
CPC分类号： H01J37/32642
摘要： Systems and methods for securing an edge ring to a support ring are described. The edge ring is secured to the support ring via multiple fasteners that are inserted into a bottom surface of the edge ring. The securing of the edge ring to the support ring provides stability of the edge ring during processing of a substrate within a plasma chamber. In addition, the securing of the edge ring to the support ring secures the edge ring to the plasma chamber because the support ring is secured to an insulator ring, which is connected to an insulator wall of the plasma chamber. Moreover, the support ring and the edge ring are pulled down vertically using one or more clasp mechanisms during the processing of the substrate and are pushed up vertically using the clasp mechanisms to remove the edge ring and the support ring from the plasma chamber.
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公开(公告)号：US20240186112A1
公开(公告)日：2024-06-06
申请号：US18415492
申请日：2024-01-17
IPC分类号： H01J37/32
CPC分类号： H01J37/32174 , H01J37/32128 , H01J37/32165 , H01J37/32926
摘要： A method for optimizing delivery of power to a plasma chamber is described. The method includes dividing each cycle of a low frequency (LF) radio frequency generator (RFG) into multiple time intervals. During each of the time intervals, a frequency offset of a high frequency (HF) RFG is generated for which the delivery of power is maximized. The frequency offsets provide a substantially inverse relationship compared to a voltage signal of the LF RFG for each cycle of the voltage signal. The frequency offsets for the time intervals are multiples of the low frequency. The substantially inverse relationship facilitates an increase in the delivery of power to the electrode. A total range of the frequency offsets from a reference HF frequency over the LF RF cycle depends on a power ratio of power that is supplied by the LF RFG and power that is supplied by the HF RFG.
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10.发明公开公开(公告)号：US20230243034A1
公开(公告)日：2023-08-03
申请号：US18001697
申请日：2021-06-14
IPC分类号： C23C16/455 , H01J37/32
CPC分类号： C23C16/45565 , H01J37/32449
摘要： Showerhead faceplates for semiconductor processing chambers are provided that include one or more sets of gas distribution passages therethrough that extend at least partially along axes that are at an oblique angle to the showerhead faceplate center axis. Such angled gas distribution passages may be used to tailor the gas flow characteristics of such showerhead faceplates to produce various desired gas flow behaviors in the gas that is delivered to the wafer via such showerhead faceplates.
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