公开(公告)号：US20150280113A1

公开(公告)日：2015-10-01

申请号：US14325190

申请日：2014-07-07

Applicant: Lam Research Corporation

Inventor： Samantha S.H. TAN ,  Wenbing YANG ,  Meihua SHEN ,  Richard P. JANEK ,  Jeffrey MARKS ,  Harmeet SINGH ,  Thorsten LILL

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/02

CPC classification number: H01L43/12 ,  C23F1/08 ,  C23F1/12 ,  C23F4/00 ,  H01L21/02554 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L45/1675

Abstract: A method for etching a stack with an Ru containing layer disposed below a hardmask and above a magnetic tunnel junction (MTJ) stack with pinned layer is provided. The hardmask is etched with a dry etch. The Ru containing layer is etched, where the etching uses hypochlorite and/or O3 based chemistries. The MTJ stack is etched. The MTJ stack is capped with dielectric materials. The pinned layer is etched following the MTJ capping.

Abstract translation: 提供了一种用设置在硬掩模下方的Ru含量层和具有固定层的磁性隧道结（MTJ）堆叠以上的层的蚀刻方法。 用干蚀刻蚀刻硬掩模。 蚀刻含Ru层，其中蚀刻使用次氯酸盐和/或基于O 3的化学物质。 MTJ堆叠被蚀刻。 MTJ叠层用电介质材料盖住。 钉扎层在MTJ封盖之后进行蚀刻。

公开(公告)号：US20160104630A1

公开(公告)日：2016-04-14

申请号：US14579822

申请日：2014-12-22

Applicant: Lam Research Corporation

Inventor： Meihua SHEN ,  Ji ZHU ,  Shuogang HUANG ,  Baosuo ZHOU ,  John HOANG ,  Prithu SHARMA ,  Thorsten LILL

IPC: H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/32136 ,  H01L21/30617 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/32131 ,  H01L21/32133 ,  H01L21/32139 ,  H01L21/76865 ,  H01L21/76885

Abstract: A method of opening a barrier film below copper structures in a stack is provided. A pulsed gas is provided into a plasma processing chamber, wherein the providing the pulsed gas comprises providing a pulsed H2 containing gas and providing a pulsed halogen containing gas, wherein the pulsed H2 containing gas and the pulsed halogen containing gas are pulsed out of phase, and wherein the pulsed H2 containing gas has an H2 high flow period and the pulsed halogen containing gas has a halogen containing gas high flow period, wherein the H2 high flow period is greater than the halogen containing gas high flow period. The pulsed gas is formed into a plasma. The copper structures and the barrier film are exposed to the plasma, which etches the barrier film. In another embodiment, a wet and dry cyclical process may be used.

Abstract translation: 提供了一种在堆叠中打开铜结构下方的阻挡膜的方法。 将脉冲气体提供到等离子体处理室中，其中提供脉冲气体包括提供脉冲的含H2气体并提供含脉冲的含卤素气体，其中脉冲的含H2气体和含有脉冲的含卤素气体是相位脉冲的， 并且其中脉冲的含H 2气体具有H 2高流动周期，并且所述脉冲含卤素气体具有含卤素气体高流动周期，其中所述H 2高流动周期大于含卤素气体高流量周期。 脉冲气体形成等离子体。 铜结构和阻挡膜暴露于等离子体，其蚀刻阻挡膜。 在另一个实施方案中，可以使用湿和干循环过程。

公开(公告)号：US20230143057A1

公开(公告)日：2023-05-11

申请号：US17905200

申请日：2021-03-01

Applicant: Lam Research Corporation

Inventor： John HOANG ,  Meihua SHEN ,  Thorsten Bernd LILL ,  Hui-Jung WU ,  Aaron Lynn ROUTZAHN ,  Francis Sloan ROBERTS

IPC: H10B51/20 ,  H10B51/30

CPC classification number: H10B51/20 ,  H10B51/30

Abstract: Channel material is conformally deposited along sidewalls of one or more etched features of a mold stack in fabricating a three-terminal memory device. The channel material is deposited in recessed regions and non-recessed regions of the one or more etched features. A sacrificial liner is deposited on the channel material. A directional etch removes the sacrificial liner from non-recessed regions of the one or more etched features. An isotropic etch removes the channel material from non-recessed regions of the one or more etched features, leaving the channel material and the sacrificial liner intact in the recessed regions. The sacrificial liner is removed, leaving the channel material intact and isolated with minimal loss of channel material from over-etch.

公开(公告)号：US20150340603A1

公开(公告)日：2015-11-26

申请号：US14818225

申请日：2015-08-04

Applicant: Lam Research Corporation

Inventor： Meihua SHEN ,  Harmeet SINGH ,  Samantha S.H. TAN ,  Jeffrey MARKS ,  Thorsten LILL ,  Richard P. JANEK ,  Wenbing YANG ,  Prithu SHARMA

IPC: H01L43/12 ,  H01L45/00

CPC classification number: H01L43/12 ,  C23F1/08 ,  C23F1/12 ,  C23F4/00 ,  H01L21/02554 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L45/1675

Abstract: A method for etching a stack with at least one metal layer in one or more cycles is provided. An initiation step is preformed, transforming part of the at least one metal layer into metal oxide, metal halide, or lattice damaged metallic sites. A reactive step is performed providing one or more cycles, where each cycle comprises providing an organic solvent vapor to form a solvated metal, metal halide, or metal oxide state and providing an organic ligand solvent to form volatile organometallic compounds.

Abstract translation: 提供一种用于在一个或多个循环中用至少一个金属层蚀刻堆叠的方法。 进行引发步骤，将至少一个金属层的一部分转化为金属氧化物，金属卤化物或晶格损坏的金属部位。 执行反应性步骤提供一个或多个循环，其中每个循环包括提供有机溶剂蒸气以形成溶剂化金属，金属卤化物或金属氧化物状态，并提供有机配体溶剂以形成挥发性有机金属化合物。

公开(公告)号：US20150280114A1

公开(公告)日：2015-10-01

申请号：US14325911

申请日：2014-07-08

Applicant: Lam Research Corporation

Inventor： Meihua SHEN ,  Harmeet SINGH ,  Samantha S.H. TAN ,  Jeffrey MARKS ,  Thorsten LILL ,  Richard P. JANEK ,  Wenbing YANG ,  Prithu SHARMA

IPC: H01L43/12

CPC classification number: H01L43/12 ,  C23F1/08 ,  C23F1/12 ,  C23F4/00 ,  H01L21/02554 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L45/1675

Abstract: A method for etching a stack with at least one metal layer in one or more cycles is provided. An initiation step is preformed, transforming part of the at least one metal layer into metal oxide, metal halide, or lattice damaged metallic sites. A reactive step is performed providing one or more cycles, where each cycle comprises providing an organic solvent vapor to form a solvated metal, metal halide, or metal oxide state and providing an organic ligand solvent to form volatile organometallic compounds. A desorption of the volatile organometallic compounds is performed.

Abstract translation: 提供一种用于在一个或多个循环中用至少一个金属层蚀刻堆叠的方法。 进行引发步骤，将至少一个金属层的一部分转化为金属氧化物，金属卤化物或晶格损坏的金属部位。 执行反应性步骤提供一个或多个循环，其中每个循环包括提供有机溶剂蒸气以形成溶剂化金属，金属卤化物或金属氧化物状态，并提供有机配体溶剂以形成挥发性有机金属化合物。 进行挥发性有机金属化合物的解吸。

公开(公告)号：US20210391355A1

公开(公告)日：2021-12-16

申请号：US17283645

申请日：2019-10-22

Applicant: LAM RESEARCH CORPORATION

Inventor： Thorsten LILL ,  Meihua SHEN ,  John HOANG ,  Hui-Jung WU ,  Gereng GUNAWAN ,  Yang PAN

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11587 ,  H01L27/11597

Abstract: A three-dimensional (3D) memory structure includes memory cells and a plurality of oxide layers and a plurality of word line layers. The plurality of oxide layers and the plurality of word line layers are alternately stacked in a first direction. A plurality of double channel holes extend through the plurality of oxide layers and the plurality of word line layers in the first direction. The plurality of double channel holes have a peanut-shaped cross-section in a second direction that is transverse to the first direction.

公开(公告)号：US20160351418A1

公开(公告)日：2016-12-01

申请号：US14723348

申请日：2015-05-27

Applicant: Lam Research Corporation

Inventor： Chih-Hsun HSU ,  Meihua SHEN ,  Thorsten LILL

IPC: H01L21/465

CPC classification number: H01L21/465 ,  H01L21/0206 ,  H01L21/31116

Abstract: A method for selectively etching silicon oxide is provided. A surface reaction phase is provided comprising flowing a surface reaction gas comprising hydrogen, nitrogen and fluorine containing components to form silicon oxide into a compound comprising silicon, hydrogen, nitrogen, and fluorine, forming the surface reaction gas into a plasma, and stopping the flow of the surface reaction gas. The surface is wet treated to remove the compound.

Abstract translation: 提供了选择性地蚀刻氧化硅的方法。 提供了表面反应相，其包括使包含氢，含氮和氟的组分的表面反应气体流动以形成氧化硅到包含硅，氢，氮和氟的化合物中，将表面反应气体形成等离子体，并停止流动 的表面反应气体。 将表面进行湿处理以除去化合物。