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公开(公告)号：US06544033B1
公开(公告)日：2003-04-08
申请号：US09658362
申请日：2000-09-08
IPC分类号： F27D1900
CPC分类号： H01L21/68757 , H01L21/67346 , H01L21/67748
摘要： Provided herein is a wafer carrier comprising a disk and a pocket, wherein the pocket is centered in the disk and holds a wafer. Also provided is a method of processing or testing a wafer for a semiconductor device, comprising the steps of placing the wafer in the wafer carrier disclosed herein; loading the wafer carrier in a loadlock chamber; and transferring the wafer carrier from the loadlock chamber to a process chamber for processing or testing.
摘要翻译： 本文提供了包括盘和袋的晶片载体，其中所述袋在盘中居中并保持晶片。 还提供了一种用于半导体器件的晶片的处理或测试的方法，包括以下步骤：将晶片放置在本文公开的晶片载体中; 将所述晶片载体装载在负载锁定室中; 并将晶片载体从负载锁定室转移到用于处理或测试的处理室。
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公开(公告)号：US06494959B1
公开(公告)日：2002-12-17
申请号：US09493694
申请日：2000-01-28
IPC分类号： C23G100
CPC分类号： H01L21/02046 , Y10S438/906
摘要： A low pressure-high hydrogen flow rate process of cleaning a silicon wafer surface is described. The combination of process pressures below about 1 Torr with hydrogen flow rates up to about 3 SLM has been found to remove substantially all oxygen contamination from the silicon wafer surface at process temperatures less than about 800° C. without the use of a reactive gas. After processing at such process pressures and flow rates, even lower levels of oxygen contamination may be achieved by then increasing the process pressure, the hydrogen flow rate, and the process temperature, though the process temperature still remains less than 800° C. The combination of low pressure and high hydrogen flow rate can be achieved using a vacuum pumping speed of at least 30 cubic meters per hour. The present invention also describes an apparatus for cleaning a silicon wafer surface in which the processes of the present invention and other processes can be practiced.
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