Structures and methods of high efficient bit conversion for multi-level cell non-volatile memories
    2.
    发明授权
    Structures and methods of high efficient bit conversion for multi-level cell non-volatile memories 有权
    用于多级单元非易失性存储器的高效位转换的结构和方法

    公开(公告)号:US08730723B2

    公开(公告)日:2014-05-20

    申请号:US13417655

    申请日:2012-03-12

    申请人: Lee Wang

    发明人: Lee Wang

    IPC分类号: G11C16/04

    摘要: Structures and methods of converting Multi-Level Cell (MLC) Non-Volatile Memory (NVM) into multi-bit information are disclosed. In MLC NVM system, multi-bit information stored in NVM cell is represented by the states of NVM cell threshold voltage levels. In this disclosure, “P” states of NVM cell threshold voltage levels are divided into “N” groups of threshold voltage levels. Each group contains “M” states of multiple threshold voltage levels of NVM cells, where P=N×M. The “M” states of NVM cell threshold voltage levels in each group are sensed and resolved by applying one correspondent gate voltage to the group. By applying “N” multiple gate voltages, the whole “P” states of NVM cell threshold voltage levels can be sensed and efficiently converted into storing bits in the MLC NVM cells.

    摘要翻译: 公开了将多级单元(MLC)非易失性存储器(NVM)转换为多位信息的结构和方法。 在MLC NVM系统中,存储在NVM单元中的多位信息由NVM单元阈值电压电平的状态表示。 在本公开中,NVM单元阈值电压电平的“P”状态被分为阈值电压电平的“N”组。 每组包含NVM单元的多个阈值电压电平的“M”状态,其中P = N×M。 通过向组中施加一个对应的栅极电压来感测和解析每组中的NVM单元阈值电压电平的“M”状态。 通过施加“N”个多个栅极电压,可以感测NVM单元阈值电压电平的整个“P”状态并有效地转换成MLC NVM单元中的存储位。

    Structures and methods to store information representable by a multiple-bit binary word in electrically erasable, programmable read-only memory (EEPROM)
    3.
    发明授权
    Structures and methods to store information representable by a multiple-bit binary word in electrically erasable, programmable read-only memory (EEPROM) 有权
    用于存储由电可擦除可编程只读存储器(EEPROM)中的多位二进制字表示的信息的结构和方法,

    公开(公告)号:US08031524B2

    公开(公告)日:2011-10-04

    申请号:US12392283

    申请日:2009-02-25

    申请人: Lee Wang

    发明人: Lee Wang

    IPC分类号: G11C16/04

    CPC分类号: G11C16/26

    摘要: Innovative structures and methods to store information capable of being represented by an n-bit binary word in electrically erasable Programmable Read-Only memories (EEPROM) are disclosed. To program a state below the highest threshold voltage for an N-type Field Effect Transistor (NFET) based EEPROM, the stored charge in the floating gate for the highest threshold voltage is erased down to the desired threshold voltage level of the EEPROM by applying an appropriate voltage to the control gate and drain of the NFET. The erase-down uses drain-avalanche-hot hole injection (DAHHI) for the NFET memory device to achieve the precise threshold voltage desired for the NFET EEPROM device. The method takes advantage of the self-convergent mechanism from the DAHHI current in the device, when the device reaches a steady state. For a “READ” operation, a read voltage is applied to the control gate and the drain is connected by a current load to the positive voltage supply. Using the distinctive threshold voltage associated with the different stored charges, the output voltage from the drain is distinctively recognized and converted back to the original n-bit word. A similar method for a PFET EEPROM is also disclosed.

    摘要翻译: 公开了用于存储能够由电可擦除可编程只读存储器(EEPROM)中的n位二进制字表示的信息的创新结构和方法。 为了对基于N型场效应晶体管(NFET)的EEPROM进行低于最高阈值电压的状态,将用于最高阈值电压的浮置栅极中存储的电荷通过施加到EEPROM的方式被擦除到期望的阈值电压电平 适当的电压到NFET的控制栅极和漏极。 擦除使用漏极 - 雪崩 - 热空穴注入(DAHHI)作为NFET存储器件,以达到NFET EEPROM器件所需的精确阈值电压。 当器件达到稳定状态时,该方法利用了器件中DAHHI电流的自融合机制。 对于“READ”操作,将读取电压施加到控制栅极,并且漏极通过电流负载连接到正电压源。 使用与不同存储电荷相关联的独特阈值电压,来自漏极的输出电压被不同地识别并转换回原始的n位字。 还公开了类似的PFET EEPROM的方法。

    STRUCTURES AND METHODS FOR READING OUT NON-VOLATILE MEMORIES
    4.
    发明申请
    STRUCTURES AND METHODS FOR READING OUT NON-VOLATILE MEMORIES 有权
    读取非易失性存储器的结构和方法

    公开(公告)号:US20110110162A1

    公开(公告)日:2011-05-12

    申请号:US12614280

    申请日:2009-11-06

    申请人: Lee Wang

    发明人: Lee Wang

    IPC分类号: G11C16/06 G11C11/00 G11C7/00

    摘要: Non-differential sense amplifier circuitry for reading out Non-Volatile Memories (NVMs) and its operating methods are disclosed. Such non-differential amplifier circuitry requires exceptionally low power and achieves moderate sensing speed, as compared to a conventional sensing scheme.

    摘要翻译: 公开了用于读出非易失性存储器(NVM)的非差分读出放大器电路及其操作方法。 与常规感测方案相比,这种非差分放大器电路需要特别低的功率并且实现适度的感测速度。

    Methods and structures for reading out non-volatile memory using NVM cells as a load element
    5.
    发明授权
    Methods and structures for reading out non-volatile memory using NVM cells as a load element 有权
    使用NVM单元读出非易失性存储器作为负载元件的方法和结构

    公开(公告)号:US07859903B1

    公开(公告)日:2010-12-28

    申请号:US12031691

    申请日:2008-02-14

    申请人: Lee Wang

    发明人: Lee Wang

    IPC分类号: G11C16/04

    CPC分类号: G11C16/26 G11C16/0483

    摘要: A Non-Volatile Memory (NVM) cell in an NVM array is read out using other NVM cells in the array as a load element. Conventional load elements such as MOS transistors or resistors used to vary the bitline potential for the NVM cell readout in conventional NVM arrays are replaced with NVM cell(s) in the array. The omission of the extra MOS transistors or resistors for the load elements not only saves silicon area but also simplifies the bitline sensing circuitry design in the NVM array.

    摘要翻译: NVM阵列中的非易失性存储器(NVM)单元使用阵列中的其他NVM单元作为负载元件读出。 用于改变常规NVM阵列中的NVM单元读出的位线电位的诸如MOS晶体管或电阻器的传统负载元件被阵列中的NVM单元替代。 省略额外的MOS晶体管或负载元件的电阻器不仅可以节省硅面积,而且可以简化NVM阵列中的位线感测电路设计。

    Keyword search volume seasonality forecasting engine
    6.
    发明授权
    Keyword search volume seasonality forecasting engine 有权
    关键词搜索量季节性预测引擎

    公开(公告)号:US07676521B2

    公开(公告)日:2010-03-09

    申请号:US11394089

    申请日:2006-03-31

    IPC分类号: G06F17/30

    CPC分类号: G06Q30/02 G06Q10/04

    摘要: A method and system are provided for forecasting keyword search volume. Keywords are categorized by concept and by the amount of data available for use in predicting future behavior. The keywords and/or the categories can also be categorized as seasonal or non-seasonal. A category level seasonal variation pattern can then be calculated based on keywords in the category that have sufficient historical data. A search volume can then be predicted for one or more keywords, with an appropriate calculation algorithm being selected based on the concept category, seasonal classification, and historical data available for the keywords.

    摘要翻译: 提供了一种用于预测关键字搜索量的方法和系统。 关键词按概念和可用于预测未来行为的数据量进行分类。 关键字和/或类别也可以分为季节性或非季节性。 然后可以基于具有足够历史数据的类别中的关键字来计算类别级季节变化模式。 然后可以针对一个或多个关键字预测搜索量,根据可用于关键字的概念类别,季节性分类和历史数据选择适当的计算算法。

    CONTINGENT FEE ADVERTISEMENT PUBLISHING SERVICE PROVIDER SYSTEM AND METHOD
    8.
    发明申请
    CONTINGENT FEE ADVERTISEMENT PUBLISHING SERVICE PROVIDER SYSTEM AND METHOD 审中-公开
    即将发布的广告发布服务提供者系统和方法

    公开(公告)号:US20090299820A1

    公开(公告)日:2009-12-03

    申请号:US12390399

    申请日:2009-02-20

    申请人: Lee Wang Jon Karlin

    发明人: Lee Wang Jon Karlin

    IPC分类号: G06Q30/00 G06Q10/00

    摘要: A purchase-transaction-settled online consumer referral and reward system and method using real-time specific merchant sales information is provided for the advertising publishing industry. The system provides a pay per transaction platform that allows advertising publishers to leverage online advertising to sell offline advertising.

    摘要翻译: 为广告出版业提供采购交易结算的在线消费者转介和奖励制度和使用实时特定商户销售信息的方法。 该系统提供一个付费每个交易平台,允许广告发布商利用在线广告来销售离线广告。

    Bit-symbol recognition method and structure for multiple-bit storage in non-volatile memories
    9.
    发明授权
    Bit-symbol recognition method and structure for multiple-bit storage in non-volatile memories 有权
    用于非易失性存储器中多位存储的位符号识别方法和结构

    公开(公告)号:US07606069B2

    公开(公告)日:2009-10-20

    申请号:US12113117

    申请日:2008-04-30

    申请人: Lee Wang

    发明人: Lee Wang

    IPC分类号: G11C16/04

    摘要: Storage of information represented by a multi-bit word in a single non-volatile memory cell is made possible by programming the threshold voltage of the non-volatile memory to a specific threshold level corresponding to the multi-bit word. Stored or generated multi-bit words are scanned and converted into a gate voltage to be applied to the non-volatile memory cell until the electrical response from the non-volatile memory cell indicates that the voltage generated from the specific multi-bit word which has been applied to the gate matches the information stored in the non-volatile memory cell. The matched multi-bit word is read out of storage and represents the stored bits in the single non-volatile memory cell.

    摘要翻译: 通过将非易失性存储器的阈值电压编程到与多位字对应的特定阈值电平,可以将由多位字表示的信息存储在单个非易失性存储单元中。 扫描存储或生成的多位字,并将其转换为施加到非易失性存储器单元的栅极电压,直到来自非易失性存储单元的电响应指示从具有多个位的特定多位字产生的电压 被施加到门匹配存储在非易失性存储单元中的信息。 匹配的多位字从存储器读出,并表示单个非易失性存储器单元中存储的位。

    RECOMMENDING KEYWORDS BASED ON BIDDING PATTERNS
    10.
    发明申请
    RECOMMENDING KEYWORDS BASED ON BIDDING PATTERNS 有权
    基于投标模式的推荐关键词

    公开(公告)号:US20080077585A1

    公开(公告)日:2008-03-27

    申请号:US11534567

    申请日:2006-09-22

    IPC分类号: G06F17/30

    CPC分类号: G06Q30/02 G06Q40/04

    摘要: Techniques for cross-selling keywords among keyword bidding entities (e.g., advertisers) based upon bidding patterns are provided. Utilizing a keyword suggestion tool in accordance with one embodiment, upon receipt of a first keyword, may examine all additional keywords that have been paired with the first keyword in the bidding patterns of other bidding entities and recommend one or more of the paired keywords to the bidding entity for consideration. In another embodiment, a keyword suggestion tool, upon receipt of a keyword from a first bidding entity, may examine the bidding pattern of the first bidding entity in comparison to the bidding patterns of other bidding entities to identify bidding entities that are similar to the bidding entity. Recommendations may then be made to the first bidding entity based upon keywords that the identified similar bidding entities have bid.

    摘要翻译: 提供了基于出价模式在关键字出价实体(例如,广告商)之间交叉销售关键字的技术。 利用根据一个实施例的关键字建议工具,在接收到第一关键字后,可以检查已经与其他投标实体的投标模式中的第一个关键字配对的所有其他关键字,并将一个或多个配对关键字推荐给 招标实体考虑。 在另一个实施例中,关键字建议工具在从第一投标实体接收到关键字后,可以与其他投标实体的投标模式相比较,来检查第一投标实体的投标模式,以识别类似投标的投标实体 实体。 然后可以基于所标识的类似投标实体具有出价的关键字向第一投标实体提出建议。