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公开(公告)号:US20120025273A1
公开(公告)日:2012-02-02
申请号:US12845162
申请日:2010-07-28
申请人: Lee-Chung LU , Wen-Hao CHEN , Yuan-Te HOU , Shen-Feng CHEN , Meng-Fu YOU
发明人: Lee-Chung LU , Wen-Hao CHEN , Yuan-Te HOU , Shen-Feng CHEN , Meng-Fu YOU
CPC分类号: G06F17/5077 , G06F17/5036 , G06F17/5045 , G06F17/5072 , G06F17/5081 , G06F2217/82 , H01L23/5286 , H01L27/10 , H01L2924/0002 , H01L2924/00
摘要: A standard cell semiconductor integrated circuit device design provides a standard cell semiconductor device that includes first standard cells and user-defined target standard cells which consume more power or include other operational characteristics that differ from the operational characteristics of the first standard cells. The standard cells are routed to ground and power wires using one power rail and the target cells are routed to the ground and power lines using the first power rail and a second power rail to alleviate electromigration in either of the power rails. The two power rails include an upper power rail and a lower power rail. An intermediate conductive layer may be disposed between the upper and lower power rails to provide for signal routing by lateral interconnection between cells.
摘要翻译: 标准单元半导体集成电路器件设计提供了标准单元半导体器件,其包括消耗更多功率的第一标准单元和用户定义的目标标准单元,或者包括与第一标准单元的操作特性不同的其他操作特性。 使用一个电源轨将标准电池单元路由到地线和电源线,并且使用第一电源轨和第二电源轨将目标电池路由到地线和电源线,以减轻任一电力轨道中的电迁移。 两个电源轨包括上电源轨和下电源轨。 中间导电层可以设置在上部和下部电源轨之间,以通过电池之间的横向互连提供信号路由。
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公开(公告)号:US20130256902A1
公开(公告)日:2013-10-03
申请号:US13438565
申请日:2012-04-03
申请人: Lee-Chung LU , Wen-Hao CHEN , Yuan-Te HOU , Fang-Yu FAN , Yu-Hsiang KAO , Dian-Hau CHEN , Shyue-Shyh LIN , Chii-Ping CHEN
发明人: Lee-Chung LU , Wen-Hao CHEN , Yuan-Te HOU , Fang-Yu FAN , Yu-Hsiang KAO , Dian-Hau CHEN , Shyue-Shyh LIN , Chii-Ping CHEN
IPC分类号: H01L23/48
CPC分类号: H01L23/5226 , H01L23/5283 , H01L2924/0002 , H01L2924/00
摘要: An interconnect structure including a bottom layer over a substrate, where the bottom layer includes at least one bottom layer line and at least one bottom layer via. The interconnect structure further includes a transition layer over the bottom layer, where the transition layer includes at least one transition layer line and at least one transition layer via. The interconnect structure further includes a top layer over the transition layer, where the top layer includes at least one top layer line and at least one top layer via. The at least one transition layer via has a cross sectional area at least 30% less than a cross sectional area of the at least one top layer via.
摘要翻译: 一种互连结构,其包括在衬底上的底层,其中底层包括至少一个底层线和至少一个底层通孔。 互连结构还包括在底层上的过渡层,其中过渡层包括至少一个过渡层线和至少一个过渡层通孔。 互连结构还包括过渡层上的顶层,其中顶层包括至少一个顶层线和至少一个顶层通孔。 所述至少一个过渡层通孔具有比所述至少一个顶层通孔的横截面面积小至少30%的横截面面积。
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公开(公告)号:US20130191796A1
公开(公告)日:2013-07-25
申请号:US13354707
申请日:2012-01-20
申请人: Wen-Hao CHEN , Yuan-Te HOU , Yi-Kan CHENG
发明人: Wen-Hao CHEN , Yuan-Te HOU , Yi-Kan CHENG
IPC分类号: G06F17/50
CPC分类号: G06F17/5068 , G06F17/5077
摘要: Methods are disclosed of modifying an integrated circuit (IC) design that utilizes multiple patterning technology (MPT). The methods include configuring a first layout of an integrated circuit, having at least one layer with features to be formed utilizing fabrication by at least two masks. The at least one layer includes a plurality of active cells and a plurality of spare cells. A second layout is configured to re-route the spare cells and active cells, wherein the re-routing utilizes at least a portion of the plurality of spare cells. Fewer than all of the at least two masks are replaced to configure the second layout.
摘要翻译: 公开了改进利用多重图案化技术(MPT)的集成电路(IC)设计的方法。 所述方法包括配置集成电路的第一布局,其具有至少一层具有通过至少两个掩模的制造而形成的特征的层。 该至少一层包括多个活动单元和多个备用单元。 第二布局被配置为重新路由备用单元和活动单元,其中重新路由使用多个备用单元的至少一部分。 比所有至少两个掩模更少,以配置第二个布局。
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公开(公告)号:US20130091476A1
公开(公告)日:2013-04-11
申请号:US13269757
申请日:2011-10-10
申请人: Huang-Yu CHEN , Yuan-Te HOU , Chung-Min FU , Chung-Hsing WANG , Wen-Hao CHEN , Yi-Kan CHENG
发明人: Huang-Yu CHEN , Yuan-Te HOU , Chung-Min FU , Chung-Hsing WANG , Wen-Hao CHEN , Yi-Kan CHENG
IPC分类号: G06F17/50
CPC分类号: G06F17/5077
摘要: A received layout identifies a plurality of circuit components to be included in an integrated circuit (IC) layer for double patterning the layer using two photomasks, the layout including a plurality of first patterns to be included in the first photomask and at least one second pattern to be included in the second photomask. A selected one of the first patterns has first and second endpoints, to be replaced by a replacement pattern connecting the first endpoint to a third endpoint. At least one respective keep-out region is provided adjacent to each respective remaining first pattern except for the selected first pattern. Data are generated representing the replacement pattern, such that no part of the replacement pattern is formed in any of the keep-out regions. Data representing the remaining first patterns and the replacement pattern are output.
摘要翻译: 接收到的布局标识要包括在集成电路(IC)层中的多个电路组件,用于使用两个光掩模对层进行双重图案化,所述布局包括要包括在第一光掩模中的多个第一图案和至少一个第二图案 被包括在第二个光掩模中。 所选择的第一模式中的一个具有第一和第二端点,被替换为将第一端点连接到第三端点的替换模式。 除了所选择的第一图案之外,至少一个相应的保留区域被设置为与每个相应的剩余第一图案相邻。 生成表示替换图案的数据,使得在任何保留区域中不形成替换图案的一部分。 输出表示剩余的第一图案和替换图案的数据。
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