Polishing pad design
    1.
    发明授权
    Polishing pad design 失效
    抛光垫设计

    公开(公告)号:US06887131B2

    公开(公告)日:2005-05-03

    申请号:US10228094

    申请日:2002-08-27

    CPC分类号: B24B37/26 B24D18/00

    摘要: A method is provided for creating a polish pad. This may involve determining a design layout of a wafer. The design layout may include a distribution of metal line features on the wafer. A polish pad design may be created/determined based on the determined layer. The polish pad may have asperities having a width greater than a width of metal line features of the wafer.

    摘要翻译: 提供了一种用于创建抛光垫的方法。 这可能涉及确定晶片的设计布局。 设计布局可以包括晶片上的金属线特征的分布。 可以基于确定的层创建/确定抛光垫设计。 抛光垫可以具有宽度大于晶片的金属线特征的宽度的粗糙度。

    Copper containing abrasive particles to modify reactivity and performance of copper CMP slurries
    2.
    发明申请
    Copper containing abrasive particles to modify reactivity and performance of copper CMP slurries 审中-公开
    含铜磨料颗粒以改善铜CMP浆料的反应性和性能

    公开(公告)号:US20060138087A1

    公开(公告)日:2006-06-29

    申请号:US11026322

    申请日:2004-12-29

    摘要: A slurry for use in a chemical mechanical polishing process for planarizing copper-based metal structures on a substrate comprises an oxidizer, an organic complexing agent, surfactants, and a plurality of copper-based metal abrasive particles, wherein the copper in the copper-based metal is capable of dissolving into the slurry and forming copper ion complexes. During the chemical mechanical polishing process, the copper removal rate may be selectively increased by increasing the concentration of copper metal abrasive particles in the slurry, and the copper removal rate may be selectively decreased by decreasing the concentration of copper metal abrasive particles in the slurry.

    摘要翻译: 用于在基板上平面化铜基金属结构的化学机械抛光工艺中的浆料包括氧化剂,有机络合剂,表面活性剂和多种铜基金属磨料颗粒,其中铜基 金属能够溶解到浆料中并形成铜离子络合物。 在化学机械抛光过程中,通过增加浆料中铜金属磨粒的浓度可以选择性地提高铜的去除速率,并且通过降低浆料中的铜金属磨料颗粒的浓度可以选择性地降低铜的去除速率。

    Rinse apparatus and method for wafer polisher
    4.
    发明授权
    Rinse apparatus and method for wafer polisher 失效
    晶圆抛光机的冲洗装置及方法

    公开(公告)号:US07021999B2

    公开(公告)日:2006-04-04

    申请号:US11099926

    申请日:2005-04-05

    IPC分类号: B24B1/00

    CPC分类号: B24B53/017

    摘要: An apparatus for polishing a wafer comprising a rotatable polishing pad having a center of rotation and a rinse delivery conduit positioned adjacent to the polishing pad and substantially in radial alignment with the center. The rinse delivery conduit includes a plurality of nozzles to dispense a rinsing liquid. In one embodiment, the plurality of nozzles are configured and positioned to generate a higher flow rate of the rinsing liquid at the end of the rinse delivery conduit proximate to the center than at the end of the rinse delivery conduit distal to the center. In another embodiment, the rinse delivery conduit has a proximal end which is substantially adjacent the center and the distal end which is approximately adjacent an outer periphery of the pad.

    摘要翻译: 一种用于抛光晶片的装置,包括具有旋转中心的可旋转抛光垫和邻近抛光垫定位并基本上与中心径向对准的冲洗输送导管。 冲洗输送导管包括多个喷嘴以分配冲洗液体。 在一个实施例中,多个喷嘴被配置和定位成在漂洗输送导管的末端靠近中心产生较高流量的漂洗液体,而不是在远离中心的漂洗输送导管末端。 在另一个实施例中,冲洗输送导管具有基本上邻近中心的近端和与垫的外周近似近似的远端。

    Rinse apparatus and method for wafer polisher
    5.
    发明申请
    Rinse apparatus and method for wafer polisher 失效
    晶圆抛光机的冲洗装置及方法

    公开(公告)号:US20050181709A1

    公开(公告)日:2005-08-18

    申请号:US11099926

    申请日:2005-04-05

    IPC分类号: B24B37/04 B24B53/007 B24B1/00

    CPC分类号: B24B53/017

    摘要: An apparatus for polishing a wafer comprising a rotatable polishing pad having a center of rotation and a rinse delivery conduit positioned adjacent to the polishing pad and substantially in radial alignment with the center. The rinse delivery conduit includes a plurality of nozzles to dispense a rinsing liquid. In one embodiment, the plurality of nozzles are configured and positioned to generate a higher flow rate of the rinsing liquid at the end of the rinse delivery conduit proximate to the center than at the end of the rinse delivery conduit distal to the center. In another embodiment, the rinse delivery conduit has a proximal end which is substantially adjacent the center and the distal end which is approximately adjacent an outer periphery of the pad.

    摘要翻译: 一种用于抛光晶片的装置,包括具有旋转中心的可旋转抛光垫和邻近抛光垫定位并基本上与中心径向对准的冲洗输送导管。 冲洗输送导管包括多个喷嘴以分配冲洗液体。 在一个实施例中,多个喷嘴被配置和定位成在漂洗输送导管的末端靠近中心产生较高流量的漂洗液体,而不是在远离中心的漂洗输送导管末端。 在另一个实施例中,冲洗输送导管具有基本上邻近中心的近端和与垫的外周近似近似的远端。

    Rinse apparatus and method for wafer polisher

    公开(公告)号:US06908370B1

    公开(公告)日:2005-06-21

    申请号:US10728550

    申请日:2003-12-04

    IPC分类号: B24B37/04 B24B53/007 B24B1/00

    CPC分类号: B24B53/017

    摘要: An apparatus for polishing a wafer comprising a rotatable polishing pad having a center of rotation and a rinse delivery conduit positioned adjacent to the polishing pad and substantially in radial alignment with the center. The rinse delivery conduit includes a plurality of nozzles to dispense a rinsing liquid. In one embodiment, the plurality of nozzles are configured and positioned to generate a higher flow rate of the rinsing liquid at the end of the rinse delivery conduit proximate to the center than at the end of the rinse delivery conduit distal to the center. In another embodiment, the rinse delivery conduit has a proximal end which is substantially adjacent the center and the distal end which is approximately adjacent an outer periphery of the pad.

    RINSE APPARATUS AND METHOD FOR WAFER POLISHER
    7.
    发明申请
    RINSE APPARATUS AND METHOD FOR WAFER POLISHER 失效
    用于波轮抛光的冲洗装置和方法

    公开(公告)号:US20050124267A1

    公开(公告)日:2005-06-09

    申请号:US10728550

    申请日:2003-12-04

    IPC分类号: B24B37/04 B24B53/007 B24B1/00

    CPC分类号: B24B53/017

    摘要: An apparatus for polishing a wafer comprising a rotatable polishing pad having a center of rotation and a rinse delivery conduit positioned adjacent to the polishing pad and substantially in radial alignment with the center. The rinse delivery conduit includes a plurality of nozzles to dispense a rinsing liquid. In one embodiment, the plurality of nozzles are configured and positioned to generate a higher flow rate of the rinsing liquid at the end of the rinse delivery conduit proximate to the center than at the end of the rinse delivery conduit distal to the center. In another embodiment, the rinse delivery conduit has a proximal end which is substantially adjacent the center and the distal end which is approximately adjacent an outer periphery of the pad.

    摘要翻译: 一种用于抛光晶片的装置,包括具有旋转中心的可旋转抛光垫和邻近抛光垫定位并基本上与中心径向对准的冲洗输送导管。 冲洗输送管道包括多个喷嘴以分配冲洗液体。 在一个实施例中,多个喷嘴被配置和定位成在漂洗输送导管的末端靠近中心产生较高流量的漂洗液体,而不是在远离中心的漂洗输送导管末端。 在另一个实施例中,冲洗输送导管具有基本上邻近中心的近端和与垫的外周近似近似的远端。

    Minimization of microelectronic interconnect thickness variations
    8.
    发明授权
    Minimization of microelectronic interconnect thickness variations 失效
    微电子互连厚度变化的最小化

    公开(公告)号:US06883153B2

    公开(公告)日:2005-04-19

    申请号:US10340534

    申请日:2003-01-10

    CPC分类号: B24B37/042 H01L21/7684

    摘要: An efficient TCAD tool to analyze the variation of topography and thickness of interconnects and components of integrated circuits introduced by multiple-layer chemical-mechanical planarization (CMP). Contact stress distribution is determined on all scales as a function of topography. A formulation is used relating the pad deformation and therefore stress directly to pattern topography ({d}), and the pad mechanical properties. The 3-dimensional stress and deformation field is described, along with representation of the statistical pad roughness and slurry thickness information. These process conditions are also functions of the surface topography and contact regimes. The stress-topography relationship is represented as [A]{P}={d}, where [A] is the influence coefficient matrix determined by the contact mechanics, and {P} and {d} represent local stress and topography on patterns. With given initial topography and slurry rate kinetics, the surface evolution at each time step of CMP can be traced iteratively to obtain post-CMP topography.

    摘要翻译: 一种有效的TCAD工具,用于分析由多层化学机械平面化(CMP)引入的集成电路的互连和部件的形貌和厚度的变化。 接触应力分布在所有尺度上作为地形的函数确定。 使用一种配方来将焊盘变形和因此的应力直接与图案形貌({d})和焊盘的机械性能有关。 描述了三维应力和变形场,以及统计垫粗糙度和浆料厚度信息的表示。 这些工艺条件也是表面形貌和接触方式的功能。 应力 - 形貌关系表示为[A] {P} = {d},其中[A]是由接触力学确定的影响系数矩阵,{P}和{d}表示模式上的局部应力和形貌。 随着给定的初始形貌和浆料速率动力学,CMP的每个时间步长的表面演化可以迭代地追溯到获得CMP后的形貌。

    Method and apparatus for determining transmission power of a secondary transmitter in a hierarchical spectrum sharing system
    9.
    发明授权
    Method and apparatus for determining transmission power of a secondary transmitter in a hierarchical spectrum sharing system 有权
    用于确定分层频谱共享系统中的次发射机的发射功率的方法和装置

    公开(公告)号:US09313746B2

    公开(公告)日:2016-04-12

    申请号:US13995845

    申请日:2011-09-16

    摘要: The present invention provides a method and apparatus for determining a transmission power of a secondary transmitter in a hierarchical spectrum sharing system. The method can comprise steps of obtaining channel quality information on a primary link from at least one primary receiver within a transmission range of the secondary transmitter; and determining the transmission power for the secondary transmitter based on the channel quality information, wherein the transmission power is matched with the channel quality indicated by the channel quality information. According to the embodiments of the present invention, a power control scheme is applied to the secondary transmitter based on the channel quality information on the primary link. In such a way, the secondary transmitter' throughput can be improved with controllable rate loss to the primary receiver and accordingly the spectrum efficiency for the whole system can be further upgraded.

    摘要翻译: 本发明提供一种用于确定分层频谱共享系统中的次发射机的发射功率的方法和装置。 该方法可以包括以下步骤:从次发射机的传输范围内的至少一个主接收机获得主链路上的信道质量信息; 以及基于所述信道质量信息确定所述辅助发射机的发射功率,其中所述发射功率与由所述信道质量信息指示的信道质量匹配。 根据本发明的实施例,基于主链路上的信道质量信息,将次级发射机应用功率控制方案。 以这种方式,可以通过对主接收机的可控的速率损失来提高次级发射机的吞吐量,因此可以进一步升级整个系统的频谱效率。