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公开(公告)号：US20120131957A1
公开(公告)日：2012-05-31
申请号：US13249798
申请日：2011-09-30
CPC分类号： C30B29/06 , C30B15/007 , C30B15/20 , C30B15/28
摘要： A method and apparatus for forming a sheet wafer melts feedstock material in a crucible that is part of a crystal growth furnace, passes a plurality of filaments through the crucible to form a sheet wafer, and cuts a portion of the sheet wafer to form a smaller sheet wafer. The method and apparatus then determine the weight of the smaller sheet wafer, and control the temperature of the melted feedstock material (e.g., by controlling crucible temperature or by interfacing with another temperature control system) as a function of the determined weight.
摘要翻译： 用于形成片状晶片的方法和装置在作为晶体生长炉的一部分的坩埚中熔化原料，将多根细丝通过坩埚形成片状晶片，并切割片状晶片的一部分以形成较小的 片状晶片。 然后，该方法和装置确定较小的片状晶片的重量，并且根据所确定的重量来控制熔化的原料的温度（例如，通过控制坩埚温度或通过与另一个温度控制系统的连接）。
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公开(公告)号：US20120131766A1
公开(公告)日：2012-05-31
申请号：US13249742
申请日：2011-09-30
CPC分类号： C30B15/007 , C30B15/20 , C30B15/26 , C30B29/06 , G01N21/9506 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of forming a sheet wafer melts feedstock material in a crucible that is part of a crystal growth furnace, and passes a plurality of filaments through the crucible to form a (un-separated) sheet wafers. A plurality of sheet wafers may be formed in different lanes in the crucible. One or more vision systems is used, during growth, to determine if a sheet wafer has a defective condition. If a defect is detected, then any of a variety of corrective actions may be taken, such as activating a cutting device to remove at least a portion of the sheet wafer, assessing the defect and grading a portion of the sheet wafer (e.g., for sorting based on grade), and/or producing an indicia. In a multiple-lane embodiment, a defect may be attended to in one lane while sheet growth continues in one or more other lanes.
摘要翻译： 形成片状晶片的方法在作为晶体生长炉的一部分的坩埚中熔化原料，并将多根细丝通过坩埚形成（未分离的）片状晶片。 可以在坩埚中的不同通道中形成多个片状晶片。 在生长期间，使用一个或多个视觉系统来确定片状晶片是否具有缺陷状况。 如果检测到缺陷，则可以采取各种校正动作中的任何一种，例如激活切割装置以移除片状晶片的至少一部分，评估缺陷并使片状晶片的一部分分级（例如，为 基于等级分类）和/或产生标记。 在多车道实施例中，可以在一个车道中考虑缺陷，同时片材生长在一个或多个其他车道中继续。
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公开(公告)号：US20120211917A1
公开(公告)日：2012-08-23
申请号：US13032742
申请日：2011-02-23
CPC分类号： C30B15/007 , C30B15/005 , C30B29/06
摘要： A method of forming a sheet wafer 1) passes at least two filaments through a molten material to produce a partially formed sheet wafer, 2) directs a cooling fluid at a flow rate toward the partially formed sheet wafer to convectively cool a given portion of the partially formed sheet wafer, and 3) monitors the thickness of the given portion of the partially formed sheet wafer. To ensure appropriate thicknesses of the wafer, the method controls the flow rate of the cooling fluid as a function of the thickness of the given portion of the partially formed sheet wafer.
摘要翻译： 一种形成片状晶片的方法1）使至少两根细丝通过熔融材料，以产生部分成形的片状晶片，2）以朝向部分成形片状晶片的流速引导冷却流体对流地冷却 部分形成的片状晶片，以及3）监视部分成形的片状晶片的给定部分的厚度。 为了确保晶片的适当厚度，该方法控制冷却流体的流量作为部分成形的薄片晶片的给定部分的厚度的函数。
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公开(公告)号：US20130167588A1
公开(公告)日：2013-07-04
申请号：US13570885
申请日：2012-08-09
IPC分类号： H01L21/02
CPC分类号： H01L21/02005 , C30B15/007 , C30B29/06
摘要： A sheet wafer furnace has a chamber having an opening, and a crucible, within the chamber, and spaced from the opening. The furnace also has a puller configured to pull a sheet wafer from molten material in the crucible and through the opening in the chamber, and a seal across the opening of the chamber.
摘要翻译： 片状晶片炉具有在室内具有开口的腔室和坩埚，并且与开口间隔开。 炉子还具有一个拉拔器，其构造成将片状晶片从坩埚中的熔融材料拉出并且通过该腔室中的开口，以及穿过该腔室的开口的密封件。
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公开(公告)号：US20120164379A1
公开(公告)日：2012-06-28
申请号：US13015074
申请日：2011-01-27
CPC分类号： C30B15/005 , C30B15/10 , C30B15/34 , C30B29/06 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10T428/24355 , Y10T428/24612 , Y10T428/24628
摘要： A sheet wafer has a generally flat, generally rectangular shaped body with a length and a width, and first and second filaments generally perpendicular to the width of the body. The first and second filaments are at least partially encapsulated by a wafer material and, together with the wafer material, form at least a portion of the body. The width is between about 145 mm and 165 mm.
摘要翻译： 片状晶片具有大致扁平的，具有长度和宽度的大致矩形的主体，并且第一和第二细丝通常垂直于主体的宽度。 第一和第二细丝至少部分地被晶片材料包封，并且与晶片材料一起形成主体的至少一部分。 宽度介于约145毫米至165毫米之间。
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公开(公告)号：US20080134964A1
公开(公告)日：2008-06-12
申请号：US11741372
申请日：2007-04-27
IPC分类号： C30B15/34
CPC分类号： C30B15/005 , C30B15/002 , C30B15/007 , C30B15/10 , C30B15/24 , C30B29/06 , Y10T117/1044
摘要： A system for producing a crystal formed from a material with impurities has a crucible for containing the material. The crucible has, among other things, a crystal region for forming the crystal, an introduction region for receiving the material, and a removal region for removing a portion of the material. The crucible is configured to produce a generally one directional flow of the material (in liquid form) from the introduction region toward the removal region. This generally one directional flow causes the removal region to have a higher concentration of impurities than the introduction region.
摘要翻译： 用于制造由具有杂质的材料形成的晶体的系统具有容纳该材料的坩埚。 坩埚尤其具有用于形成晶体的晶体区域，用于接收材料的引入区域和用于去除材料的一部分的去除区域。 坩埚被配置为产生从引入区域朝向移除区域的材料（液体形式）的大致一个方向的流动。 这通常一个定向流使得去除区域具有比引入区域更高的杂质浓度。
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公开(公告)号：US20080102605A1
公开(公告)日：2008-05-01
申请号：US11925169
申请日：2007-10-26
CPC分类号： C30B15/005 , C30B15/34 , C30B33/00 , Y10T117/102
摘要： A furnace for growing a ribbon crystal has a channel for growing a ribbon crystal at a given rate in a given direction, and a separating mechanism for separating a portion from the growing ribbon crystal. At least a part of the separating mechanism moves at about the given rate and in about the given direction while separating the portion from the growing ribbon crystal.
摘要翻译： 用于生长带状晶体的炉具有用于沿给定方向以给定速率生长带状晶体的通道和用于从生长的带状晶体分离部分的分离机构。 分离机构的至少一部分以大约给定速率和大约给定方向移动，同时将该部分与生长的带状晶体分离。
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