利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

8 条记录 (耗时 0.035 秒)

    Chemiluminescence detection apparatus
    1.
    发明授权
    Chemiluminescence detection apparatus 失效
    化学发光检测仪

    公开(公告)号：US06506341B2

    公开(公告)日：2003-01-14

    申请号：US09129003

    申请日：1998-08-04

    申请人： Leping Li ,  James A. Gilhooly ,  Clifford O. Morgan, III ,  Cong Wei ,  Werner Moser ,  Matthias Kutter ,  Joseph Knee ,  Walter Imfeld ,  Bruno Greuter ,  Heinz Stuenzi

    发明人： Leping Li ,  James A. Gilhooly ,  Clifford O. Morgan, III ,  Cong Wei ,  Werner Moser ,  Matthias Kutter ,  Joseph Knee ,  Walter Imfeld ,  Bruno Greuter ,  Heinz Stuenzi

    IPC分类号： H01L21302

    CPC分类号： B24B37/013 ,  B24B49/12 ,  G01N21/766 ,  H01L21/30625 ,  Y10T436/175383

    摘要： An apparatus is described for detecting the presence of a gaseous chemical produced during a chemical-mechanical polishing operation. The apparatus includes a catalytic converter, a reaction chamber and a light sensor. The catalytic converter, heated to about 800° C. converts the chemical to a different chemical product. The reaction chamber produces an excited species; the pressure in the reaction chamber is maintained sufficiently low to substantially avoid collisional deactivation of the excited species, so as to permit real-time detection of the chemical. A light signal from the excited species is input to the light sensor. An output from the light sensor corresponds to the real-time detection of the chemical, thereby permitting real-time control of the chemical-mechanical polishing operation.

    摘要翻译： 描述了一种用于检测在化学机械抛光操作期间产生的气态化学品的存在的装置。 该装置包括催化转化器，反应室和光传感器。 加热至约800℃的催化转化器将化学品转化为不同的化学产品。 反应室产生激发物质; 反应室中的压力保持足够低以基本上避免激发物质的碰撞失活，从而允许化学品的实时检测。 来自激发物种的光信号被输入到光传感器。 来自光传感器的输出对应于化学品的实时检测，从而允许化学机械抛光操作的实时控制。

    Optimization of chemical mechanical process by detection of oxide/nitride interface using CLD system
    4.
    发明授权
    Optimization of chemical mechanical process by detection of oxide/nitride interface using CLD system 有权
    通过使用CLD系统检测氧化物/氮化物界面来优化化学机械过程

    公开(公告)号：US06254453B1

    公开(公告)日：2001-07-03

    申请号：US09409243

    申请日：1999-09-30

    申请人： Leping Li ,  James A. Gilhooly ,  Clifford O. Morgan, III ,  Cong Wei

    发明人： Leping Li ,  James A. Gilhooly ,  Clifford O. Morgan, III ,  Cong Wei

    IPC分类号： B26B100

    CPC分类号： G01N21/76

    摘要： A method is provided to optimize the chemical mechanical planarization process of wafers having a target removal layer and a stop layer. A slurry is added to a polishing table which includes a polishing pad and a platen adapted for rotation; a portion of the slurry is allowed to engage an interface between the polishing pad and the wafer. A gaseous sample is continuously extracted from the slurry; the gaseous sample includes a reactant product created when the polishing pad engages the stop layer. The gaseous sample is introduced into a reactant product detector. A first time is determined, corresponding to an initial detection of the reactant product in the slurry, thereby creating a first reference point. A second time is determined, corresponding to the detection of a maximum volume of the reactant in said slurry, thereby creating a second reference point. The first and second reference points are then processed to obtain a signal, wherein the signal reflects the uniformity of removal of the layer containing the reactant product.

    摘要翻译： 提供了一种用于优化具有目标去除层和停止层的晶片的化学机械平坦化处理的方法。 将浆料添加到包括抛光垫和适于旋转的压板的抛光台上; 允许一部分浆料与抛光垫和晶片之间的界面接合。 从浆料中连续提取气态样品; 气态样品包括当抛光垫接合停止层时产生的反应物产物。 将气态样品引入反应物产物检测器。 确定第一次，对应于浆料中反应物产物的初始检测，从而产生第一参考点。 确定第二次，对应于所述浆料中反应物的最大体积的检测，从而产生第二参考点。 然后处理第一和第二参考点以获得信号，其中信号反映了含有反应物产物的层的去除的均匀性。

    Chemical mechanical polishing endpoint process control
    5.
    发明授权
    Chemical mechanical polishing endpoint process control 有权
    化学机械抛光终点过程控制

    公开(公告)号：US06276987B1

    公开(公告)日：2001-08-21

    申请号：US09129103

    申请日：1998-08-04

    申请人： Leping Li ,  James A. Gilhooly ,  Clifford O. Morgan, III ,  Cong Wei

    发明人： Leping Li ,  James A. Gilhooly ,  Clifford O. Morgan, III ,  Cong Wei

    IPC分类号： B24B4900

    CPC分类号： B24B37/013 ,  B24B37/042

    摘要： Determination of an endpoint for removing a film from a wafer, by determining a first reference point removal time indicating when a breakthrough of the film has occurred, determining a second reference point removal time indicating when the film has been polished almost to completion, determining an additional removal time indicating an overpolishing interval, and adding the second reference point removal time with the additional removal time to get a total removal time to the endpoint.

    摘要翻译： 通过确定指示膜的突破何时发生的第一参考点去除时间确定指示胶片何时被抛光几乎完成的第二参考点去除时间来确定用于从晶片去除胶片的端点，确定 额外的移除时间指示过度抛光间隔，并且将第二参考点去除时间与额外的移除时间相加以获得到端点的总移除时间。