公开(公告)号：US09054277B2

公开(公告)日：2015-06-09

申请号：US14248461

申请日：2014-04-09

Applicant: Lextar Electronics Corporation

Inventor： Chia-En Lee ,  Cheng-Hung Chen ,  Li-Chuan Lin

IPC: H01L33/62 ,  H01L33/42 ,  H01L33/38 ,  H01L23/00 ,  H01L33/20

CPC classification number: H01L33/42 ,  H01L24/13 ,  H01L33/20 ,  H01L33/385 ,  H01L33/62 ,  H01L2224/13027 ,  H01L2224/13101 ,  H01L2224/13339 ,  H01L2224/16227 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00

Abstract: A light-emitting diode (LED) with a bump structure on a sidewall is provided. The LED comprises a substrate, an epitaxial structure, a first conductive bump, a second conductive bump, a first extended electrode and a second extended electrode. The substrate has a top surface, a first side surface and an inclined surface between the top surface and the first side surface. The epitaxial structure is disposed on the top surface of the substrate, and comprises a N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a transparent conductive layer, a P-electrode and a N-electrode. The first extended electrode and the second extended electrode connect the P-electrode and the N-electrode, extend through the inclined surface, and are electrically connected to the first and the second conductive bumps, respectively. A mounting structure comprises said LED, a sub-mount and a connector mounting the LED onto the sub-mount.

Abstract translation: 提供了一种在侧壁上具有凸块结构的发光二极管（LED）。 LED包括衬底，外延结构，第一导电凸块，第二导电凸块，第一延伸电极和第二延伸电极。 基板具有顶表面，第一侧表面和在顶表面和第一侧表面之间的倾斜表面。 外延结构设置在衬底的顶表面上，并且包括N型半导体层，发光层，P型半导体层，透明导电层，P电极和N电极。 第一延伸电极和第二延伸电极连接P电极和N电极，延伸穿过倾斜表面，并分别电连接到第一和第二导电凸块。 安装结构包括所述LED，子安装座和将LED安装到子座上的连接器。

公开(公告)号：US20160351751A1

公开(公告)日：2016-12-01

申请号：US14886182

申请日：2015-10-19

Applicant: Lextar Electronics Corporation

Inventor： Cheng-Hung Chen ,  Chao-Hsien Lin

IPC: H01L33/40 ,  H01L33/38

CPC classification number: H01L33/405 ,  H01L33/382 ,  H01L2933/0016

Abstract: A semiconductor light emitting structure and a manufacturing method thereof are provided. The semiconductor light emitting structure includes a substrate, an epitaxial layer and a stepped electrode. The substrate has a first surface and a second surface opposite to the first surface. The epitaxial layer is formed by a first semiconductor layer, an active layer and a second semiconductor layer which are stacked on the first surface in sequence. The stepped electrode is formed within the epitaxial layer, and includes a main body portion, a step level and a reflection electrode portion extended towards the first surface from the step level. The main body portion at least passes through the second semiconductor layer and the active layer. The reflection electrode portion is extended into the first semiconductor layer from the main body portion.

Abstract translation: 提供半导体发光结构及其制造方法。 半导体发光结构包括衬底，外延层和阶梯电极。 基板具有与第一表面相对的第一表面和第二表面。 外延层由依次堆叠在第一表面上的第一半导体层，有源层和第二半导体层形成。 所述阶梯电极形成在所述外延层内，并且包括从所述台阶级朝向所述第一表面延伸的主体部分，台阶级和反射电极部。 主体部分至少穿过第二半导体层和有源层。 反射电极部从主体部延伸到第一半导体层。