公开(公告)号：US20160149077A1

公开(公告)日：2016-05-26

申请号：US15010667

申请日：2016-01-29

Applicant: Lextar Electronics Corporation

Inventor： Chia-Lin HSIAO ,  Nai-Wei HSU ,  Te-Chung WANG ,  Tsung-Yu YANG

IPC: H01L33/14 ,  H01L33/40 ,  H01L33/38 ,  H01L33/00 ,  H01L33/20

CPC classification number: H01L33/14 ,  H01L33/0008 ,  H01L33/005 ,  H01L33/20 ,  H01L33/38 ,  H01L33/387 ,  H01L33/40 ,  H01L33/42 ,  H01L2933/0016 ,  Y10S977/734 ,  Y10S977/95

Abstract: The disclosure provides a light-emitting diode and a method for manufacturing the same. The light-emitting diode comprises a N-type metal electrode, a N-type semiconductor layer contacted with the N-type metal electrode, a P-type semiconductor layer, a light-emitting layer interposed between the N-type semiconductor layer and the P-type semiconductor layer, a low-contact-resistance material layer positioned on the P-type semiconductor layer, a transparent conductive layer covered the low-contact-resistance material layer and the P-type semiconductor layer, and a P-type metal electrode positioned on the transparent conductive layer.

Abstract translation: 本发明提供一种发光二极管及其制造方法。 发光二极管包括N型金属电极，与N型金属电极接触的N型半导体层，P型半导体层，介于N型半导体层和N型半导体层之间的发光层 P型半导体层，位于P型半导体层上的低接触电阻材料层，覆盖低接触电阻材料层和P型半导体层的透明导电层，以及P型金属 电极位于透明导电层上。

公开(公告)号：US20150115301A1

公开(公告)日：2015-04-30

申请号：US14247408

申请日：2014-04-08

Applicant: Lextar Electronics Corporation

Inventor： Tsung-Yu YANG ,  Tzong-Liang TSAI

IPC: H01L33/40 ,  H01L33/42

CPC classification number: H01L33/405 ,  H01L33/36 ,  H01L33/42 ,  H01L33/46

Abstract: An electrode structure includes at least one reflection layer, a barrier layer, and a conductive pad. The barrier layer includes a first barrier layer and a second barrier layer. The first and second barrier layers are stacked on the reflection layer in sequence. The first and second barrier layers are made of different materials. The conductive pad is located on the barrier layer.

Abstract translation: 电极结构包括至少一个反射层，阻挡层和导电焊盘。 阻挡层包括第一阻挡层和第二阻挡层。 第一和第二阻挡层依次层叠在反射层上。 第一和第二阻挡层由不同的材料制成。 导电垫位于阻挡层上。