公开(公告)号：US20160149077A1

公开(公告)日：2016-05-26

申请号：US15010667

申请日：2016-01-29

Applicant: Lextar Electronics Corporation

Inventor： Chia-Lin HSIAO ,  Nai-Wei HSU ,  Te-Chung WANG ,  Tsung-Yu YANG

IPC: H01L33/14 ,  H01L33/40 ,  H01L33/38 ,  H01L33/00 ,  H01L33/20

CPC classification number: H01L33/14 ,  H01L33/0008 ,  H01L33/005 ,  H01L33/20 ,  H01L33/38 ,  H01L33/387 ,  H01L33/40 ,  H01L33/42 ,  H01L2933/0016 ,  Y10S977/734 ,  Y10S977/95

Abstract: The disclosure provides a light-emitting diode and a method for manufacturing the same. The light-emitting diode comprises a N-type metal electrode, a N-type semiconductor layer contacted with the N-type metal electrode, a P-type semiconductor layer, a light-emitting layer interposed between the N-type semiconductor layer and the P-type semiconductor layer, a low-contact-resistance material layer positioned on the P-type semiconductor layer, a transparent conductive layer covered the low-contact-resistance material layer and the P-type semiconductor layer, and a P-type metal electrode positioned on the transparent conductive layer.

Abstract translation: 本发明提供一种发光二极管及其制造方法。 发光二极管包括N型金属电极，与N型金属电极接触的N型半导体层，P型半导体层，介于N型半导体层和N型半导体层之间的发光层 P型半导体层，位于P型半导体层上的低接触电阻材料层，覆盖低接触电阻材料层和P型半导体层的透明导电层，以及P型金属 电极位于透明导电层上。

公开(公告)号：US20140225150A1

公开(公告)日：2014-08-14

申请号：US14054303

申请日：2013-10-15

Applicant: Lextar Electronics Corporation

Inventor： Chia-Lin HSIAO ,  Nai-Wei Hsu ,  Te-Chung Wang ,  Tsung-Yu Yang

IPC: H01L33/42

CPC classification number: H01L33/14 ,  H01L33/0008 ,  H01L33/005 ,  H01L33/20 ,  H01L33/38 ,  H01L33/387 ,  H01L33/40 ,  H01L33/42 ,  H01L2933/0016 ,  Y10S977/734 ,  Y10S977/95

Abstract: The disclosure provides a light-emitting diode and a method for manufacturing the same. The light-emitting diode comprises a N-type metal electrode, a N-type semiconductor layer contacted with the N-type metal electrode, a P-type semiconductor layer, a light-emitting layer interposed between the N-type semiconductor layer and the P-type semiconductor layer, a low-contact-resistance material layer positioned on the P-type semiconductor layer, a transparent conductive layer covered the low-contact-resistance material layer and the P-type semiconductor layer, and a P-type metal electrode positioned on the transparent conductive layer.

Abstract translation: 本发明提供一种发光二极管及其制造方法。 发光二极管包括N型金属电极，与N型金属电极接触的N型半导体层，P型半导体层，介于N型半导体层和N型半导体层之间的发光层 P型半导体层，位于P型半导体层上的低接触电阻材料层，覆盖低接触电阻材料层和P型半导体层的透明导电层，以及P型金属 电极位于透明导电层上。