公开(公告)号：US20170155018A1

公开(公告)日：2017-06-01

申请号：US15293403

申请日：2016-10-14

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi Kuo ,  Chao-Hsien Lin ,  Ya-Ru Yang

IPC: H01L33/46 ,  H01L33/54 ,  H01L33/32 ,  H01L33/50 ,  H01L33/62 ,  H01L33/60 ,  H01L33/38

CPC classification number: H01L33/46 ,  H01L33/32 ,  H01L33/382 ,  H01L33/505 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/16245

Abstract: A semiconductor light-emitting structure and a semiconductor package structure thereof are provided. The semiconductor light-emitting structure includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, a metal layer and a distributed Bragg reflector. The active layer is disposed on the first-type semiconductor layer. The second-type semiconductor layer is disposed on the active layer. The metal layer is disposed on the second-type semiconductor layer as a first reflective structure, wherein the metal layer has an opening portion. The distributed Bragg reflector is disposed on the metal layer and interposed into the opening portion as a second reflective structure. The first reflective structure and the second reflective structure form a reflective surface on the second-type semiconductor layer.

公开(公告)号：US10283497B2

公开(公告)日：2019-05-07

申请号：US15361475

申请日：2016-11-27

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi Kuo ,  Chao-Hsien Lin ,  Ya-Ru Yang

IPC: H01L33/00 ,  H01L27/02 ,  H01L29/866 ,  H01L29/872 ,  H01L33/52 ,  H01L33/62 ,  H01L27/15 ,  H01L33/38 ,  H01L25/16

Abstract: The present invention provides a light-emitting diode (LED) chip. The LED chip includes a LED structure and an electrostatic discharge (ESD) protection structure. The ESD protection structure is in a corner of the LED chip and connects with the LED structure in anti-parallel. An interface between the LED structure and the ESD protection structure is a straight line from a top view.

公开(公告)号：US10043950B2

公开(公告)日：2018-08-07

申请号：US15293403

申请日：2016-10-14

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi Kuo ,  Chao-Hsien Lin ,  Ya-Ru Yang

IPC: H01L33/46 ,  H01L33/32 ,  H01L33/38 ,  H01L33/50 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62

Abstract: A semiconductor light-emitting structure and a semiconductor package structure thereof are provided. The semiconductor light-emitting structure includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, a metal layer and a distributed Bragg reflector. The active layer is disposed on the first-type semiconductor layer. The second-type semiconductor layer is disposed on the active layer. The metal layer is disposed on the second-type semiconductor layer as a first reflective structure, wherein the metal layer has an opening portion. The distributed Bragg reflector is disposed on the metal layer and interposed into the opening portion as a second reflective structure. The first reflective structure and the second reflective structure form a reflective surface on the second-type semiconductor layer.