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公开(公告)号：US08711662B2
公开(公告)日：2014-04-29
申请号：US13590214
申请日：2012-08-21
申请人： Lien Lee , Xuhui Jin , Kaizhong Gao , Amit Itagi , William A. Challener
发明人： Lien Lee , Xuhui Jin , Kaizhong Gao , Amit Itagi , William A. Challener
IPC分类号： G11B11/00 , G11B5/31 , G11B5/48 , G11B5/60 , G11B7/122 , G11B7/1387 , G11B7/1384 , G11B5/00 , G11B11/105
CPC分类号： G11B5/314 , G11B5/4866 , G11B5/6088 , G11B7/122 , G11B7/1384 , G11B7/1387 , G11B11/10536 , G11B2005/0005 , G11B2005/0021 , Y10T428/11 , Y10T428/1171 , Y10T428/1193
摘要： An apparatus includes a waveguide shaped to direct light to a focal point, and a near-field transducer positioned adjacent to the focal point, wherein the near-field transducer includes a dielectric component and a metallic component positioned adjacent to at least a portion of the dielectric component. An apparatus includes a waveguide shaped to direct light to a focal point, and a near-field transducer positioned adjacent to the focal point, wherein the near-field transducer includes a first metallic component, a first dielectric layer positioned adjacent to at least a portion of the first metallic component, and a second metallic component positioned adjacent to at least a portion of the first dielectric component.
摘要翻译： 一种装置包括成形为将光引导到焦点的波导和邻近焦点定位的近场换能器，其中近场换能器包括介电部件和金属部件，该金属部件邻近至少一部分 介电元件。 一种装置包括成形为将光引导到焦点的波导和邻近焦点定位的近场换能器，其中近场换能器包括第一金属部件，第一介电层位于与至少一部分 的第一金属部件和与第一介电部件的至少一部分相邻定位的第二金属部件。
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公开(公告)号：US20100123965A1
公开(公告)日：2010-05-20
申请号：US12272984
申请日：2008-11-18
IPC分类号： G11B5/02
CPC分类号： G11B5/314 , G11B5/4866 , G11B5/6088 , G11B7/122 , G11B7/1384 , G11B7/1387 , G11B11/10536 , G11B2005/0005 , G11B2005/0021 , Y10T428/11 , Y10T428/1171 , Y10T428/1193
摘要： An apparatus includes a waveguide shaped to direct light to a focal point, and a near-field transducer positioned adjacent to the focal point, wherein the near-field transducer includes a dielectric component and a metallic component positioned adjacent to at least a portion of the dielectric component. An apparatus includes a waveguide shaped to direct light to a focal point, and a near-field transducer positioned adjacent to the focal point, wherein the near-field transducer includes a first metallic component, a first dielectric layer positioned adjacent to at least a portion of the first metallic component, and a second metallic component positioned adjacent to at least a portion of the first dielectric component.
摘要翻译： 一种装置包括成形为将光引导到焦点的波导和邻近焦点定位的近场换能器，其中近场换能器包括介电部件和金属部件，该金属部件邻近至少一部分 介电元件。 一种装置包括成形为将光引导到焦点的波导和邻近焦点定位的近场换能器，其中近场换能器包括第一金属部件，第一介电层位于与至少一部分 的第一金属部件和与第一介电部件的至少一部分相邻定位的第二金属部件。
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公开(公告)号：US20120314549A1
公开(公告)日：2012-12-13
申请号：US13590214
申请日：2012-08-21
IPC分类号： G11B11/00
CPC分类号： G11B5/314 , G11B5/4866 , G11B5/6088 , G11B7/122 , G11B7/1384 , G11B7/1387 , G11B11/10536 , G11B2005/0005 , G11B2005/0021 , Y10T428/11 , Y10T428/1171 , Y10T428/1193
摘要： An apparatus includes a waveguide shaped to direct light to a focal point, and a near-field transducer positioned adjacent to the focal point, wherein the near-field transducer includes a dielectric component and a metallic component positioned adjacent to at least a portion of the dielectric component. An apparatus includes a waveguide shaped to direct light to a focal point, and a near-field transducer positioned adjacent to the focal point, wherein the near-field transducer includes a first metallic component, a first dielectric layer positioned adjacent to at least a portion of the first metallic component, and a second metallic component positioned adjacent to at least a portion of the first dielectric component.
摘要翻译： 一种装置包括成形为将光引导到焦点的波导和邻近焦点定位的近场换能器，其中近场换能器包括介电部件和金属部件，该金属部件邻近至少一部分 介电元件。 一种装置包括成形为将光引导到焦点的波导和邻近焦点定位的近场换能器，其中近场换能器包括第一金属部件，第一介电层位于与至少一部分 的第一金属部件和与第一介电部件的至少一部分相邻定位的第二金属部件。
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公开(公告)号：US08248891B2
公开(公告)日：2012-08-21
申请号：US12272984
申请日：2008-11-18
IPC分类号： G11B11/00
CPC分类号： G11B5/314 , G11B5/4866 , G11B5/6088 , G11B7/122 , G11B7/1384 , G11B7/1387 , G11B11/10536 , G11B2005/0005 , G11B2005/0021 , Y10T428/11 , Y10T428/1171 , Y10T428/1193
摘要： An apparatus includes a waveguide shaped to direct light to a focal point, and a near-field transducer positioned adjacent to the focal point, wherein the near-field transducer includes a dielectric component and a metallic component positioned adjacent to at least a portion of the dielectric component. An apparatus includes a waveguide shaped to direct light to a focal point, and a near-field transducer positioned adjacent to the focal point, wherein the near-field transducer includes a first metallic component, a first dielectric layer positioned adjacent to at least a portion of the first metallic component, and a second metallic component positioned adjacent to at least a portion of the first dielectric component.
摘要翻译： 一种装置包括成形为将光引导到焦点的波导和邻近焦点定位的近场换能器，其中近场换能器包括介电部件和金属部件，该金属部件邻近至少一部分 介电元件。 一种装置包括成形为将光引导到焦点的波导和邻近焦点定位的近场换能器，其中近场换能器包括第一金属部件，第一介电层位于与至少一部分 的第一金属部件和与第一介电部件的至少一部分相邻定位的第二金属部件。
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公开(公告)号：US08451705B2
公开(公告)日：2013-05-28
申请号：US13231549
申请日：2011-09-13
申请人： Chubing Peng , Kaizhong Gao , Lien Lee , Amit Vasant Itagi , Michael Allen Seigler , Yimin Niu , Sethuraman Jayashankar
发明人： Chubing Peng , Kaizhong Gao , Lien Lee , Amit Vasant Itagi , Michael Allen Seigler , Yimin Niu , Sethuraman Jayashankar
CPC分类号： G11B5/4866 , G11B5/3133 , G11B5/6088 , G11B13/08 , G11B2005/0021
摘要： An apparatus includes a waveguide configured to deliver light to a transducer region. The apparatus also includes a plasmonic transducer that has two metal elements configured as side-by-side plates on a substrate-parallel plane with a gap therebetween. The gap is disposed along the substrate-parallel plane and has an input end disposed proximate the transducer region and an output end. The transducer is configured to provide a surface plasmon-enhanced near-field radiation pattern proximate the output end in response to the light received by the waveguide.
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6.发明申请Plasmonic Transducer Having Two Metal Elements with a Gap Disposed Therebetween 有权等离子体传感器具有两个金属元素之间的间隙公开(公告)号：US20130064051A1
公开(公告)日：2013-03-14
申请号：US13231549
申请日：2011-09-13
申请人： Chubing Peng , Kaizhong Gao , Lien Lee , Amit Vasant Itagi , Michael Allen Seigler , Yimin Niu , Sethuraman Jayashankar
发明人： Chubing Peng , Kaizhong Gao , Lien Lee , Amit Vasant Itagi , Michael Allen Seigler , Yimin Niu , Sethuraman Jayashankar
CPC分类号： G11B5/4866 , G11B5/3133 , G11B5/6088 , G11B13/08 , G11B2005/0021
摘要： An apparatus includes a waveguide configured to deliver light to a transducer region. The apparatus also includes a plasmonic transducer that has two metal elements configured as side-by-side plates on a substrate-parallel plane with a gap therebetween. The gap is disposed along the substrate-parallel plane and has an input end disposed proximate the transducer region and an output end. The transducer is configured to provide a surface plasmon-enhanced near-field radiation pattern proximate the output end in response to the light received by the waveguide.
摘要翻译： 一种装置包括配置成将光传送到换能器区域的波导。 该装置还包括等离子体激元换能器，其具有在基板平行平面上被配置为并排板的两个金属元件，其间具有间隙。 该间隙沿衬底平行平面设置并具有设置在换能器区域附近的输入端和输出端。 换能器被配置为响应于由波导接收的光提供靠近输出端的表面等离子体增强近场辐射图。
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公开(公告)号：US06699795B1
公开(公告)日：2004-03-02
申请号：US10099841
申请日：2002-03-15
申请人： Benjamin Schwarz , Chan-Lon Yang , Kiyoko Ikeuchi , Peter Keswick , Lien Lee
发明人： Benjamin Schwarz , Chan-Lon Yang , Kiyoko Ikeuchi , Peter Keswick , Lien Lee
IPC分类号： H01L21302
CPC分类号： H01L21/31116 , H01L21/32137 , Y10S438/952
摘要： A method of making a semiconductor structure includes etching an anti-reflective coating layer at a pressure of 10 millitorr or less; etching a nitride layer with a first nitride etch plasma having a first F:C ratio; and etching the nitride layer with a second nitride etch plasma having a second F:C ratio. The first F:C ratio is greater than the second F:C ratio.
摘要翻译： 制造半导体结构的方法包括在10毫托或更低的压力下蚀刻抗反射涂层; 用具有第一F：C比率的第一氮化物蚀刻等离子体蚀刻氮化物层; 并用具有第二F：C比率的第二氮化物蚀刻等离子体蚀刻氮化物层。 第一F：C比大于第二F：C比。
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公开(公告)号：US20060237072A1
公开(公告)日：2006-10-26
申请号：US11034998
申请日：2005-01-12
申请人： Lien Lee
发明人： Lien Lee
IPC分类号： F16K21/00
CPC分类号： F16K19/006 , E03C1/0401 , E03C2001/0416 , F16L5/06 , Y10T137/9464
摘要： A lavatory facility includes a faucet for attaching to a lavatory member and having a base member for engaging onto the lavatory member, and a tubular fitment for attaching the faucet to the lavatory member. The tubular fitment includes a shank having one end for engaging into the faucet, and a peripheral rib for engaging with and for anchoring the shank to the faucet. The shank includes a peripheral flange for engaging with the base member of the faucet, and for anchoring the shank to the faucet and the lavatory member. A pipe includes a bore for receiving the shank, and includes an inner thread for threading with an outer thread of the shank, and for securing the pipe to the shank, and for securing the faucet to the lavatory member having different heights or thicknesses or depths.
摘要翻译： 盥洗室设施包括用于附接到盥洗室构件并具有用于接合到盥洗室构件上的基座构件的水龙头和用于将水龙头连接到盥洗室构件的管状配件。 管状配件包括具有用于接合到龙头中的一端的柄，以及用于与柄头接合并将柄锚固到龙头的外围肋。 柄部包括用于与龙头的基部构件接合的外围法兰，并且用于将柄锚固到龙头和盥洗室构件。 管道包括用于接收柄部的孔，并且包括用于与柄的外螺纹螺纹连接的内螺纹，并且用于将管固定到柄上，并且用于将龙头固定到具有不同高度或厚度或深度的盥洗部件 。
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公开(公告)号：US07112834B1
公开(公告)日：2006-09-26
申请号：US10791657
申请日：2004-03-02
申请人： Benjamin Schwarz , Chan-Lon Yang , Kiyoko Ikeuchi , Peter Keswick , Lien Lee
发明人： Benjamin Schwarz , Chan-Lon Yang , Kiyoko Ikeuchi , Peter Keswick , Lien Lee
IPC分类号： H01L29/76
CPC分类号： H01L21/31116 , H01L21/32137 , Y10S438/952
摘要： A method of making a semiconductor structure includes etching an anti-reflective coating layer at a pressure of 10 millitorr or less; etching a nitride layer with a first nitride etch plasma having a first F:C ratio; and etching the nitride layer with a second nitride etch plasma having a second F:C ratio. The first F:C ratio is greater than the second F:C ratio.
摘要翻译： 制造半导体结构的方法包括在10毫托或更低的压力下蚀刻抗反射涂层; 用具有第一F：C比率的第一氮化物蚀刻等离子体蚀刻氮化物层; 并用具有第二F：C比率的第二氮化物蚀刻等离子体蚀刻氮化物层。 第一F：C比大于第二F：C比。
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