公开(公告)号：US07112834B1

公开(公告)日：2006-09-26

申请号：US10791657

申请日：2004-03-02

申请人： Benjamin Schwarz ,  Chan-Lon Yang ,  Kiyoko Ikeuchi ,  Peter Keswick ,  Lien Lee

发明人： Benjamin Schwarz ,  Chan-Lon Yang ,  Kiyoko Ikeuchi ,  Peter Keswick ,  Lien Lee

IPC分类号： H01L29/76

CPC分类号： H01L21/31116 ,  H01L21/32137 ,  Y10S438/952

摘要： A method of making a semiconductor structure includes etching an anti-reflective coating layer at a pressure of 10 millitorr or less; etching a nitride layer with a first nitride etch plasma having a first F:C ratio; and etching the nitride layer with a second nitride etch plasma having a second F:C ratio. The first F:C ratio is greater than the second F:C ratio.

摘要翻译： 制造半导体结构的方法包括在10毫托或更低的压力下蚀刻抗反射涂层; 用具有第一F：C比率的第一氮化物蚀刻等离子体蚀刻氮化物层; 并用具有第二F：C比率的第二氮化物蚀刻等离子体蚀刻氮化物层。 第一F：C比大于第二F：C比。

公开(公告)号：US06699795B1

公开(公告)日：2004-03-02

申请号：US10099841

申请日：2002-03-15

申请人： Benjamin Schwarz ,  Chan-Lon Yang ,  Kiyoko Ikeuchi ,  Peter Keswick ,  Lien Lee

发明人： Benjamin Schwarz ,  Chan-Lon Yang ,  Kiyoko Ikeuchi ,  Peter Keswick ,  Lien Lee

IPC分类号： H01L21302

CPC分类号： H01L21/31116 ,  H01L21/32137 ,  Y10S438/952

摘要： A method of making a semiconductor structure includes etching an anti-reflective coating layer at a pressure of 10 millitorr or less; etching a nitride layer with a first nitride etch plasma having a first F:C ratio; and etching the nitride layer with a second nitride etch plasma having a second F:C ratio. The first F:C ratio is greater than the second F:C ratio.

摘要翻译： 制造半导体结构的方法包括在10毫托或更低的压力下蚀刻抗反射涂层; 用具有第一F：C比率的第一氮化物蚀刻等离子体蚀刻氮化物层; 并用具有第二F：C比率的第二氮化物蚀刻等离子体蚀刻氮化物层。 第一F：C比大于第二F：C比。

公开(公告)号：US06440866B1

公开(公告)日：2002-08-27

申请号：US09595750

申请日：2000-06-16

申请人： Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

发明人： Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

IPC分类号： H01L2100

CPC分类号： H01J37/32871 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382 ,  H01L21/31116 ,  H01L21/6831

摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

摘要翻译： 本发明的一般方法是在与氟碳或氟烃气体的蚀刻过程期间在反应器室内提供聚合物硬化前体件（例如硅，碳，碳化硅或氮化硅，但优选为硅） ，并且将聚合物硬化前体件高于聚合温度高于氧化硅对硅蚀刻选择性的期望增加。 通常，该聚合物硬化前体或硅片可以是反应器室壁和/或天花板的一个整体部分或者单独的，可消耗的和快速可拆卸的部件，并且加热/冷却装置可以是任何合适的类型，包括导电的装置 或远程加热硅片。

公开(公告)号：US06218312B1

公开(公告)日：2001-04-17

申请号：US08987509

申请日：1998-10-08

申请人： Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

发明人： Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

IPC分类号： H01L21302

CPC分类号： H01J37/32871 ,  C23C16/517 ,  H01F2029/143 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382 ,  H01L21/31116 ,  H01L21/6831

摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

摘要翻译： 本发明的一般方法是在与氟碳或氟烃气体的蚀刻过程期间在反应器室内提供聚合物硬化前体件（例如硅，碳，碳化硅或氮化硅，但优选为硅） ，并且将聚合物硬化前体件高于聚合温度高于氧化硅对硅蚀刻选择性的期望增加。 通常，该聚合物硬化前体或硅片可以是反应器室壁和/或天花板的一个整体部分或者单独的，可消耗的和快速可拆卸的部件，并且加热/冷却装置可以是任何合适的类型，包括导电的装置 或远程加热硅片。

公开(公告)号：US6036877A

公开(公告)日：2000-03-14

申请号：US648256

申请日：1996-05-13

申请人： Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

发明人： Kenneth S. Collins ,  Michael Rice ,  David W. Groechel ,  Gerald Zheyao Yin ,  Jon Mohn ,  Craig A. Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Yuen-Kui Wong ,  Jeffrey Marks ,  Peter Keswick

IPC分类号： H01L21/302 ,  C23C16/517 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/683 ,  H05H1/00

CPC分类号： H01J37/32871 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/6831 ,  H01F2029/143 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382

摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

公开(公告)号：US5990017A

公开(公告)日：1999-11-23

申请号：US104550

申请日：1998-06-25

申请人： Kenneth Collins ,  Michael Rice ,  David Groechel ,  Gerald Yin ,  Jon Mohn ,  Craig Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Jerry Wong ,  Jeffrey Marks ,  Peter Keswick

发明人： Kenneth Collins ,  Michael Rice ,  David Groechel ,  Gerald Yin ,  Jon Mohn ,  Craig Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Jerry Wong ,  Jeffrey Marks ,  Peter Keswick

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/00

CPC分类号： H01J37/321 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01L21/31116 ,  H01F2029/143 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382

摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

公开(公告)号：US6024826A

公开(公告)日：2000-02-15

申请号：US734797

申请日：1996-10-23

申请人： Kenneth Collins ,  Michael Rice ,  David Groechel ,  Gerald Yin ,  Jon Mohn ,  Craig Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Jerry Wong ,  Jeffrey Marks ,  Peter Keswick

发明人： Kenneth Collins ,  Michael Rice ,  David Groechel ,  Gerald Yin ,  Jon Mohn ,  Craig Roderick ,  Douglas Buchberger ,  Chan-Lon Yang ,  Jerry Wong ,  Jeffrey Marks ,  Peter Keswick

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/311 ,  C23F1/02 ,  C23C16/00

CPC分类号： H01J37/321 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32458 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32688 ,  H01J37/32706 ,  H01J37/32871 ,  H01L21/31116 ,  H01F2029/143 ,  H01J2237/3343 ,  H01J2237/3345 ,  H01J2237/3346 ,  H01J2237/3382

摘要： A general method of the invention is to provide a polymer-hardening precursor piece (such as silicon, carbon, silicon carbide or silicon nitride, but preferably silicon) within the reactor chamber during an etch process with a fluoro-carbon or fluoro-hydrocarbon gas, and to heat the polymer-hardening precursor piece above the polymerization temperature sufficiently to achieve a desired increase in oxide-to-silicon etch selectivity. Generally, this polymer-hardening precursor or silicon piece may be an integral part of the reactor chamber walls and/or ceiling or a separate, expendable and quickly removable piece, and the heating/cooling apparatus may be of any suitable type including apparatus which conductively or remotely heats the silicon piece.

公开(公告)号：US08895435B2

公开(公告)日：2014-11-25

申请号：US13018009

申请日：2011-01-31

申请人： Chien-Liang Lin ,  Yun-Ren Wang ,  Ying-Wei Yen ,  Wen-Yi Teng ,  Chan-Lon Yang

发明人： Chien-Liang Lin ,  Yun-Ren Wang ,  Ying-Wei Yen ,  Wen-Yi Teng ,  Chan-Lon Yang

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/36 ,  H01L21/44 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/28 ,  H01L29/49 ,  H01L21/265

CPC分类号： H01L29/4916 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/28035 ,  H01L29/4925

摘要： The method of forming a polysilicon layer is provided. A first polysilicon layer with a first grain size is formed on a substrate. A second polysilicon layer with a second grain size is formed on the first polysilicon layer. The first grain size is smaller than the second grain size. The first polysilicon layer with a smaller grain size can serve as a base for the following deposition, so that the second polysilicon layer formed thereon has a flatter topography, and thus, the surface roughness is reduced and the Rs uniformity within a wafer is improved.

摘要翻译： 提供了形成多晶硅层的方法。 在基板上形成具有第一粒径的第一多晶硅层。 在第一多晶硅层上形成第二晶粒尺寸的第二多晶硅层。 第一粒度小于第二粒度。 具有较小晶粒尺寸的第一多晶硅层可用作随后沉积的基底，使得其上形成的第二多晶硅层具有更平坦的形貌，因此表面粗糙度降低，并且晶片内的Rs均匀性得到改善。

公开(公告)号：US08476169B2

公开(公告)日：2013-07-02

申请号：US13274357

申请日：2011-10-17

申请人： Chan-Lon Yang ,  Ted Ming-Lang Guo ,  Chin-I Liao ,  Chin-Cheng Chien ,  Shu-Yen Chan ,  Chun-Yuan Wu

发明人： Chan-Lon Yang ,  Ted Ming-Lang Guo ,  Chin-I Liao ,  Chin-Cheng Chien ,  Shu-Yen Chan ,  Chun-Yuan Wu

IPC分类号： H01L21/311

CPC分类号： H01L29/7848 ,  H01L21/30608 ,  H01L21/3247 ,  H01L21/823425 ,  H01L29/6656 ,  H01L29/66636

摘要： A method for fabricating a strained channel semiconductor structure includes providing a substrate, forming at least one gate structure on said substrate, performing an etching process to form two recesses in said substrate at opposites sides of said gate structure, the sidewall of said recess being concaved in the direction to said gate structure and forming an included angle with respect to horizontal plane, and performing a pre-bake process to modify the recess such that said included angle between the sidewall of said recess and the horizontal plane is increased.

摘要翻译： 一种制造应变通道半导体结构的方法包括提供衬底，在所述衬底上形成至少一个栅极结构，执行蚀刻工艺以在所述衬底的所述栅极结构的相对侧形成两个凹槽，所述凹槽的侧壁为凹面 在所述栅极结构的方向上并相对于水平面形成夹角，并且执行预烘烤处理以改变凹部，使得所述凹部的侧壁和水平面之间的所述夹角增加。

公开(公告)号：US20130137243A1

公开(公告)日：2013-05-30

申请号：US13308513

申请日：2011-11-30

申请人： Chan-Lon Yang ,  Ching-I Li ,  Ger-Pin Lin ,  I-Ming Lai ,  Yun-San Huang ,  Chin-I Liao ,  Chin-Cheng Chien

发明人： Chan-Lon Yang ,  Ching-I Li ,  Ger-Pin Lin ,  I-Ming Lai ,  Yun-San Huang ,  Chin-I Liao ,  Chin-Cheng Chien

IPC分类号： H01L21/20

CPC分类号： H01L29/6656 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7847 ,  H01L29/7848

摘要： First, a substrate with a recess is provided in a semiconductor process. Second, an embedded SiGe layer is formed in the substrate. The embedded SiGe layer includes an epitaxial SiGe material which fills up the recess. Then, a pre-amorphization implant (PAI) procedure is carried out on the embedded SiGe layer to form an amorphous region. Next, a source/drain implanting procedure is carried out on the embedded SiGe layer to form a source doping region and a drain doping region. Later, a source/drain annealing procedure is carried out to form a source and a drain in the substrate. At least one of the pre-amorphization implant procedure and the source/drain implanting procedure is carried out in a cryogenic procedure below −30° C.

摘要翻译： 首先，在半导体工艺中设置具有凹部的基板。 第二，在衬底中形成嵌入的SiGe层。 嵌入的SiGe层包括填充凹槽的外延SiGe材料。 然后，在嵌入的SiGe层上进行预非晶化植入（PAI）工艺以形成非晶区域。 接下来，在嵌入的SiGe层上进行源极/漏极注入工艺以形成源极掺杂区域和漏极掺杂区域。 之后，进行源极/漏极退火处理以在衬底中形成源极和漏极。 前非晶化植入程序和源极/漏极注入程序中的至少一个在低于-30℃的低温过程中进行。